MJE15034G Datasheet, Equivalent, Cross Reference Search

MJE15034 NPN,MJE15035 PNPComplementary SiliconPlastic Power TransistorsTO-220, NPN & PNP Deviceshttp://onsemi.comComplementary silicon plastic power transistors are designed for4.0 AMPERESuse as high-frequency drivers in audio amplifiers.POWER TRANSISTORSFeaturesCOMPLEMENTARY SILICON hFE = 100 (Min) @ IC = 0.5 Adc350 VOLTS, 50 WATTS= 10 (Min) @ IC = 2.0 Adc C

MJE15034 NPN,MJE15035 PNPPreferred DeviceComplementary SiliconPlastic Power TransistorsTO-220, NPN & PNP Deviceshttp://onsemi.com. . . designed for use as high-frequency drivers in audio amplifiers. hFE = 100 (Min) @ IC = 0.5 Adc4.0 AMPERES= 10 (Min) @ IC = 2.0 AdcPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -VCEO(sus) = 350 Vdc (Min) - MJE15034, MJE150

MJE15034 (NPN),MJE15035 (PNP)Complementary SiliconPlastic Power TransistorsTO-220, NPN & PNP Deviceswww.onsemi.comComplementary silicon plastic power transistors are designed for4.0 AMPERESuse as high-frequency drivers in audio amplifiers.POWER TRANSISTORSFeaturesCOMPLEMENTARY SILICON High Current Gain - Bandwidth Product350 VOLTS, 50 WATTS TO-220 Compact Packa

MJE15036 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features - MJE15037 High DC current gain, High VCEO, High fT, Complementary pair with MJE15037. / Appli

MJE15037 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220 PNP Silicon PNP transistor in a TO-220 Plastic Package. / Features - MJE15036 High DC current gain, High VCEO, High fT, Complementary pair with MJE15036. / Appli

Order this documentMOTOROLAby MJE15032/DSEMICONDUCTOR TECHNICAL DATANPN*MJE15032Complementary Silicon PlasticPNPPower Transistors*MJE15033. . . designed for use as highfrequency drivers in audio amplifiers. DC Current Gain Specified to 5.0 AmpereshFE = 50 (Min) @ IC = 0.5 Adc*Motorola Preferred DevicehFE = 10 (Min) @ IC = 2.0 Adc CollectorEmitter Su

MJE15028, MJE15030 (NPN)MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE DC Current Gain Specified to 4.0 APOWER TRANSISTORShFE = 40 (Min) @ IC = 3.0 AdcCOMPLEMENTARY SILICON= 20 (Min) @ IC = 4.0 Adc120-150 VOLTS, 50 WATTS Coll

MJE15028, MJE15030 (NPN),MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant*120-

ON SemiconductortNPNComplementary Silicon Plastic*MJE15032Power TransistorsPNP. . . designed for use as highfrequency drivers in audio amplifiers.*MJE15033 DC Current Gain Specified to 5.0 AmpereshFE = 50 (Min) @ IC = 0.5 Adc= 10 (Min) @ IC = 2.0 Adc*ON Semiconductor Preferred Device CollectorEmitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) M

MJE15032 (NPN),MJE15033 (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use as high-frequency drivers in audio amplifiers.http://onsemi.comFeatures DC Current Gain Specified to 5.0 AmpereshFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES= 10 (Min) @ IC = 2.0 AdcPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 250 Vd

MJE15028, MJE15030 (NPN)MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE DC Current Gain Specified to 4.0 APOWER TRANSISTORShFE = 40 (Min) @ IC = 3.0 AdcCOMPLEMENTARY SILICON= 20 (Min) @ IC = 4.0 Adc120-150 VOLTS, 50 WATTS Coll

MJE15032 (NPN),MJE15033 (PNP)Preferred DevicesComplementary SiliconPlastic Power TransistorsDesigned for use as high-frequency drivers in audio amplifiers.http://onsemi.comFeatures DC Current Gain Specified to 5.0 Amperes8.0 AMPEREShFE = 70 (Min) @ IC = 0.5 AdcPOWER TRANSISTORS= 10 (Min) @ IC = 2.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Sustaining Voltage -

MJE15034 NPN,MJE15035 PNPComplementary SiliconPlastic Power TransistorsTO-220, NPN & PNP Deviceshttp://onsemi.comComplementary silicon plastic power transistors are designed for4.0 AMPERESuse as high-frequency drivers in audio amplifiers.POWER TRANSISTORSFeaturesCOMPLEMENTARY SILICON hFE = 100 (Min) @ IC = 0.5 Adc350 VOLTS, 50 WATTS= 10 (Min) @ IC = 2.0 Adc C

MJE15032 (NPN),MJE15033 (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use as high-frequency drivers in audio amplifiers.http://onsemi.comFeatures DC Current Gain Specified to 5.0 AmpereshFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES= 10 (Min) @ IC = 2.0 AdcPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 250 Vd

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON EPITAXIAL POWER TRANSISTORS MJE15032 NPNMJE15033 PNPTO - 220Plastic PackageHigh - Frequency Drivers in Audio AmplifierABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector- Base Voltage VCBO 250 VCollector- Emitter Voltage VCEO 250 V5Emitter- Base Voltage VEBO V8

Complementary NPN-PNP Power Bipolar Transistor RMJE15032(NPN) MJE15033(PNP) APPLICATIONS High frequency drivers in audio amplifiers FEATURES V =250V (min) High collector voltageV =250V (min) CEO CEO NPN-PNP Complementary NPN-PNP

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJE15031DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15030APPLICATIONSDesigned for use as highfreque

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor MJE15032DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)DC current gain -: h = 50 (Min) @I = 0.5 AFE C: h = 10 (Min) @I = 2.0 AFE CComplement to Type MJE15033APPLICATIONSDesigned for use as highfrequency drivers in audioamplifiers.ABSOLUTE MAXIMUM RATINGS (Ta=25)S

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJE15033DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -250V(Min)CEO(SUS)DC current gain -: h = 50 (Min) @I = -0.5 AFE C: h = 10 (Min) @I = -2.0 AFE CComplement to Type MJE15032APPLICATIONSDesigned for use as highfrequency drivers in audioamplifiers.ABSOLUTE MAXIMUM RATINGS (Ta=25)

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor MJE15030DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15031APPLICATIONSDesigned for use as highfreque

isc Silicon PNP Power Transistor MJE15031DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15030Minimum Lot-to-Lot variations for robust deviceperformance and reliable operat

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE15032 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) DC current gain - : hFE = 50 (Min) @IC= 0.5 A : hFE = 10 (Min) @IC= 2.0 A Complement to Type MJE15033 APPLICATIONS Designed for use as highfrequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RA

isc Silicon PNP Power Transistor MJE15033DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -250V(Min)CEO(SUS)DC current gain -: h = 50 (Min) @I = -0.5 AFE C: h = 10 (Min) @I = -2.0 AFE CComplement to Type MJE15032Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as highfrequency drivers in a

isc Silicon NPN Power Transistor MJE15036DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)DC current gain -: h = 5000 (Min) @I = 0.5 AFE C: h = 3000 (Min) @I = 2.0 AFE CComplement to Type MJE15037Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as highfrequency drivers in

isc Silicon PNP Power Transistor MJE15037DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -250V(Min)CEO(SUS)DC current gain -: h = 5000 (Min) @I = -0.5 AFE C: h = 3000 (Min) @I = -2.0 AFE CComplement to Type MJE15036Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as highfrequency drivers

isc Silicon NPN Power Transistor MJE15030DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15031Minimum Lot-to-Lot variations for robust deviceperformance and reliable operat