Биполярный транзистор MJE18004G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJE18004G
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 75
W
Макcимально допустимое напряжение коллектор-база (Ucb): 1000
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9
V
Макcимальный постоянный ток коллектора (Ic): 5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 13
MHz
Ёмкость коллекторного перехода (Cc): 50
pf
Статический коэффициент передачи тока (hfe): 14
Корпус транзистора:
TO220AB
Аналоги (замена) для MJE18004G
MJE18004G
Datasheet (PDF)
..1. Size:247K onsemi
mje18004g.pdf MJE18004G, MJF18004GSWITCHMODENPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18004G have an applications specific state-of-the-artdie designed for use in 220 V line-operated SWITCHMODE Powerhttp://onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:5.0 AMPERES
6.1. Size:422K motorola
mje18004.pdf Order this documentMOTOROLAby MJE18004/DSEMICONDUCTOR TECHNICAL DATADesigner's Data Sheet*MJE18004SWITCHMODE*MJF18004NPN Bipolar Power Transistor*Motorola Preferred DeviceFor Switching Power Supply ApplicationsPOWER TRANSISTORThe MJE/MJF18004 have an applications specific stateoftheart die designed5.0 AMPERESfor use in 220 V line operated Switchmod
6.2. Size:233K onsemi
mje18004d2.pdf MJE18004D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodeand Built-in Efficient Antisaturation http://onsemi.comNetworkPOWER TRANSISTORSThe MJE18004D2 is state-of-art High Speed High gain BIPolar5 AMPERES,transistor (H2BIP). High dynamic characteristics and lot to lotminimum spread (150 ns on storage time) make it ideally suitable
6.3. Size:340K onsemi
mje18004 mjf18004.pdf MJE18004, MJF18004Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18004 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:5.0 AMPERES Hi
6.4. Size:216K inchange semiconductor
mje18004.pdf isc Silicon NPN Power Transistor MJE18004DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
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