MJE18004G - описание и поиск аналогов

Order this document MOTOROLA by MJE18004/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet * MJE18004 SWITCHMODE * MJF18004 NPN Bipolar Power Transistor *Motorola Preferred Device For Switching Power Supply Applications POWER TRANSISTOR The MJE/MJF18004 have an applications specific state of the art die designed 5.0 AMPERES for use in 220 V line operated Switchmod

MJE18004D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation http //onsemi.com Network POWER TRANSISTORS The MJE18004D2 is state-of-art High Speed High gain BIPolar 5 AMPERES, transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread ( 150 ns on storage time) make it ideally suitable

MJE18004, MJF18004 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 5.0 AMPERES Hi

isc Silicon NPN Power Transistor MJE18004 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET