MJE18004G
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE18004G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75
W
Maximum Collector-Base Voltage |Vcb|: 1000
V
Maximum Collector-Emitter Voltage |Vce|: 450
V
Maximum Emitter-Base Voltage |Veb|: 9
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 13
MHz
Collector Capacitance (Cc): 50
pF
Forward Current Transfer Ratio (hFE), MIN: 14
Noise Figure, dB: -
Package:
TO220AB
MJE18004G
Transistor Equivalent Substitute - Cross-Reference Search
MJE18004G
Datasheet (PDF)
..1. Size:247K onsemi
mje18004g.pdf
MJE18004G, MJF18004GSWITCHMODENPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18004G have an applications specific state-of-the-artdie designed for use in 220 V line-operated SWITCHMODE Powerhttp://onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:5.0 AMPERES
6.1. Size:422K motorola
mje18004.pdf
Order this documentMOTOROLAby MJE18004/DSEMICONDUCTOR TECHNICAL DATADesigner's Data Sheet*MJE18004SWITCHMODE*MJF18004NPN Bipolar Power Transistor*Motorola Preferred DeviceFor Switching Power Supply ApplicationsPOWER TRANSISTORThe MJE/MJF18004 have an applications specific stateoftheart die designed5.0 AMPERESfor use in 220 V line operated Switchmod
6.2. Size:233K onsemi
mje18004d2.pdf
MJE18004D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodeand Built-in Efficient Antisaturation http://onsemi.comNetworkPOWER TRANSISTORSThe MJE18004D2 is state-of-art High Speed High gain BIPolar5 AMPERES,transistor (H2BIP). High dynamic characteristics and lot to lotminimum spread (150 ns on storage time) make it ideally suitable
6.3. Size:340K onsemi
mje18004 mjf18004.pdf
MJE18004, MJF18004Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18004 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:5.0 AMPERES Hi
6.4. Size:216K inchange semiconductor
mje18004.pdf
isc Silicon NPN Power Transistor MJE18004DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
Datasheet: 2N3200
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, B772
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, 2N3209CSM
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