Биполярный транзистор MJE18008G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJE18008G
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 125
W
Макcимально допустимое напряжение коллектор-база (Ucb): 1000
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9
V
Макcимальный постоянный ток коллектора (Ic): 8
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 13
MHz
Ёмкость коллекторного перехода (Cc): 100
pf
Статический коэффициент передачи тока (hfe): 14
Корпус транзистора:
TO220AB
Аналоги (замена) для MJE18008G
MJE18008G
Datasheet (PDF)
..1. Size:145K onsemi
mje18008g.pdf 
MJE18008, MJF18008Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18008 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:8.0 AMPERES Hi
6.1. Size:421K motorola
mje18008.pdf 
Order this documentMOTOROLAby MJE18008/DSEMICONDUCTOR TECHNICAL DATA*MJE18008Designer's Data Sheet*MJF18008SWITCHMODE*Motorola Preferred DeviceNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsPOWER TRANSISTOR8.0 AMPERESThe MJE/MJF18008 have an applications specific stateoftheart die designed1000 VOLTSfor use in 220 V lineoper
6.2. Size:341K onsemi
mje18008.pdf 
DATA SHEETwww.onsemi.comSwitch-mode NPN BipolarPOWER TRANSISTORPower Transistor8.0 AMPERES1000 VOLTSFor Switching Power Supply Applications 45 and 125 WATTSCOLLECTORMJE180082,4The MJE18008 have an applications specific state-of-the-art diedesigned for use in 220 V line-operated switch-mode Power supplies1and electronic light ballasts. BASEFeatures3EMITTER
6.3. Size:139K onsemi
mje18008 mjf18008.pdf 
MJE18008, MJF18008Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18008 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:8.0 AMPERES Hi
6.4. Size:94K jmnic
mje18008.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18008 DESCRIPTION With TO-220C package High voltage ,high speed Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI
6.5. Size:216K inchange semiconductor
mje18008.pdf 
isc Silicon NPN Power Transistor MJE18008DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
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