MJE18008G - Даташиты. Аналоги. Основные параметры
Наименование производителя: MJE18008G
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 125 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 13 MHz
Ёмкость коллекторного перехода (Cc): 100 pf
Статический коэффициент передачи тока (hfe): 14
Корпус транзистора: TO220AB
Аналоги (замена) для MJE18008G
MJE18008G Datasheet (PDF)
mje18008g.pdf
MJE18008, MJF18008 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 8.0 AMPERES Hi
mje18008.pdf
Order this document MOTOROLA by MJE18008/D SEMICONDUCTOR TECHNICAL DATA * MJE18008 Designer's Data Sheet * MJF18008 SWITCHMODE *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES The MJE/MJF18008 have an applications specific state of the art die designed 1000 VOLTS for use in 220 V line oper
mje18008.pdf
DATA SHEET www.onsemi.com Switch-mode NPN Bipolar POWER TRANSISTOR Power Transistor 8.0 AMPERES 1000 VOLTS For Switching Power Supply Applications 45 and 125 WATTS COLLECTOR MJE18008 2,4 The MJE18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power supplies 1 and electronic light ballasts. BASE Features 3 EMITTER
mje18008 mjf18008.pdf
MJE18008, MJF18008 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 8.0 AMPERES Hi
Другие транзисторы... MJE15033G , MJE15034G , MJE15035G , MJE16014 , MJE170G , MJE171G , MJE172G , MJE18004G , TIP127 , MJE180G , MJE181G , MJE182G , MJE200G , MJE210G , MJE210T , MJE243G , MJE253G .
History: TN3725 | NA01EI | TA2307
History: TN3725 | NA01EI | TA2307
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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