MJE18008G Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE18008G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 13 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 14
Noise Figure, dB: -
Package: TO220AB
MJE18008G Transistor Equivalent Substitute - Cross-Reference Search
MJE18008G Datasheet (PDF)
mje18008g.pdf
MJE18008, MJF18008Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18008 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:8.0 AMPERES Hi
mje18008.pdf
Order this documentMOTOROLAby MJE18008/DSEMICONDUCTOR TECHNICAL DATA*MJE18008Designer's Data Sheet*MJF18008SWITCHMODE*Motorola Preferred DeviceNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsPOWER TRANSISTOR8.0 AMPERESThe MJE/MJF18008 have an applications specific stateoftheart die designed1000 VOLTSfor use in 220 V lineoper
mje18008.pdf
DATA SHEETwww.onsemi.comSwitch-mode NPN BipolarPOWER TRANSISTORPower Transistor8.0 AMPERES1000 VOLTSFor Switching Power Supply Applications 45 and 125 WATTSCOLLECTORMJE180082,4The MJE18008 have an applications specific state-of-the-art diedesigned for use in 220 V line-operated switch-mode Power supplies1and electronic light ballasts. BASEFeatures3EMITTER
mje18008 mjf18008.pdf
MJE18008, MJF18008Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18008 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:8.0 AMPERES Hi
mje18008.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18008 DESCRIPTION With TO-220C package High voltage ,high speed Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI
mje18008.pdf
isc Silicon NPN Power Transistor MJE18008DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
