MJE200G datasheet, аналоги, основные параметры

Наименование производителя: MJE200G  📄📄 

Маркировка: JE200

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 25 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 65 MHz

Ёмкость коллекторного перехода (Cc): 80 pf

Статический коэффициент передачи тока (hFE): 45

Корпус транзистора: TO126

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MJE200G даташит

 ..1. Size:164K  onsemi
 mje200g mje210g.pdf pdf_icon

MJE200G

MJE200G (NPN), MJE210G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http //onsemi.com Features 5.0 AMPERES High DC Current Gain POWER TRANSISTORS Low Collector-Emitter Saturation Voltage COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product Annular Construc

 ..2. Size:115K  onsemi
 mje200g.pdf pdf_icon

MJE200G

MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http //onsemi.com Features 5.0 AMPERES Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - COMPLEMENTARY SILICON hFE

 8.1. Size:255K  motorola
 mje200re.pdf pdf_icon

MJE200G

Order this document MOTOROLA by MJE200/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power * MJE200 Plastic Transistors PNP . . . designed for low voltage, low power, high gain audio amplifier applications. * MJE210 Collector Emitter Sustaining Voltage VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc *Motorola Preferred Device High DC Current Gain hFE = 7

 8.2. Size:42K  fairchild semi
 mje200.pdf pdf_icon

MJE200G

MJE200 Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product fT=65MHz @ IC=100mA (Min.) Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MJE170G, MJE171G, MJE172G, MJE18004G, MJE18008G, MJE180G, MJE181G, MJE182G, SS8050, MJE210G, MJE210T, MJE243G, MJE253G, MJE270G, MJE271G, MJE2955A, MJE2955TG