All Transistors. MJE200G Datasheet

 

MJE200G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJE200G
   SMD Transistor Code: JE200
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 65 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
   Package: TO126

 MJE200G Transistor Equivalent Substitute - Cross-Reference Search

   

MJE200G Datasheet (PDF)

 ..1. Size:164K  onsemi
mje200g mje210g.pdf

MJE200G
MJE200G

MJE200G (NPN),MJE210G (PNP)Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES High DC Current GainPOWER TRANSISTORS Low Collector-Emitter Saturation VoltageCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product Annular Construc

 ..2. Size:115K  onsemi
mje200g.pdf

MJE200G
MJE200G

MJE200 - NPN,MJE210 - PNPPreferred Device Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -COMPLEMENTARY SILICONhFE

 8.1. Size:255K  motorola
mje200re.pdf

MJE200G
MJE200G

Order this documentMOTOROLAby MJE200/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon Power*MJE200Plastic TransistorsPNP. . . designed for low voltage, lowpower, highgain audio amplifier applications.*MJE210 CollectorEmitter Sustaining Voltage VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc*Motorola Preferred Device High DC Current Gain hFE = 7

 8.2. Size:42K  fairchild semi
mje200.pdf

MJE200G
MJE200G

MJE200Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) Complement to MJE210TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V

 8.3. Size:115K  onsemi
mje200 mje210.pdf

MJE200G
MJE200G

MJE200 - NPN,MJE210 - PNPPreferred Device Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -COMPLEMENTARY SILICONhFE

 8.4. Size:213K  inchange semiconductor
mje200.pdf

MJE200G
MJE200G

isc Silicon NPN Power Transistor MJE200DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 25V(Min)CEO(SUS)DC Current Gain-: h = 70(Min) @ I = 500mAFE CLow Collector-Emitter Saturation Voltage-: VCE(sat)= 0.3V(Max)@ I = 500mACHigh Current-GainBandwidth ProductfT= 65MHz(Min) @ I = 100mACMinimum Lot-to-Lot variations for robust deviceperformance and

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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