MJE200G Datasheet. Specs and Replacement

Type Designator: MJE200G  📄📄 

SMD Transistor Code: JE200

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 65 MHz

Collector Capacitance (Cc): 80 pF

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

Package: TO126

 MJE200G Substitution

- BJT ⓘ Cross-Reference Search

 

MJE200G datasheet

 ..1. Size:164K  onsemi

 mje200g mje210g.pdf pdf_icon

MJE200G

MJE200G (NPN), MJE210G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http //onsemi.com Features 5.0 AMPERES High DC Current Gain POWER TRANSISTORS Low Collector-Emitter Saturation Voltage COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product Annular Construc... See More ⇒

 ..2. Size:115K  onsemi

 mje200g.pdf pdf_icon

MJE200G

MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http //onsemi.com Features 5.0 AMPERES Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - COMPLEMENTARY SILICON hFE ... See More ⇒

 8.1. Size:255K  motorola

 mje200re.pdf pdf_icon

MJE200G

Order this document MOTOROLA by MJE200/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power * MJE200 Plastic Transistors PNP . . . designed for low voltage, low power, high gain audio amplifier applications. * MJE210 Collector Emitter Sustaining Voltage VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc *Motorola Preferred Device High DC Current Gain hFE = 7... See More ⇒

 8.2. Size:42K  fairchild semi

 mje200.pdf pdf_icon

MJE200G

MJE200 Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product fT=65MHz @ IC=100mA (Min.) Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V ... See More ⇒

SHOW MORE

Detailed specifications: MJE170G, MJE171G, MJE172G, MJE18004G, MJE18008G, MJE180G, MJE181G, MJE182G, SS8050, MJE210G, MJE210T, MJE243G, MJE253G, MJE270G, MJE271G, MJE2955A, MJE2955TG

Keywords - MJE200G pdf specs

 MJE200G cross reference

 MJE200G equivalent finder

 MJE200G pdf lookup

 MJE200G substitution

 MJE200G replacement