MJE5851G - Аналоги. Основные параметры
Наименование производителя: MJE5851G
Маркировка: MJE5851
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 350 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 270 pf
Статический коэффициент передачи тока (hfe): 5
Корпус транзистора: TO220AB
MJE5851G - технические параметры
mje5851g.pdf
MJE5850, MJE5851, MJE5852 SWITCHMODE Series PNP Silicon Power Transistors http //onsemi.com The MJE5850, MJE5851 and the MJE5852 transistors are designed for high-voltage, high-speed, power switching in inductive circuits 8 AMPERE where fall time is critical. They are particularly suited for line operated SWITCHMODE applications. PCP SILICON POWER TRANSISTORS Features 300-350-400
mje5850 mje5851 mje5852.pdf
MJE5850, MJE5851, MJE5852 Switch-mode Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high-voltage, high-speed, power switching in inductive circuits www.onsemi.com where fall time is critical. They are particularly suited for line operated switch-mode applications. 8 AMPERE Features PCP SILICON Switching Regulators POWER T
mje5850r.pdf
Order this document MOTOROLA by MJE5850/D SEMICONDUCTOR TECHNICAL DATA MJE5850 * MJE5851 Designer's Data Sheet MJE5852 * SWITCHMODE Series *Motorola Preferred Device PNP Silicon Power Transistors 8 AMPERE The MJE5850, MJE5851 and the MJE5852 transistors are designed for high volt- PNP SILICON age, high speed, power switching in inductive circuits where fall time is critic
mje5852.pdf
MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL INVERTERS 3 2 1 DESCRIPTION The MJE5852 is manufactured using High TO-220 Voltage PNP Multi-Epitaxial technology for high switching speed and high voltage capability. It is intended for use in hi
Другие транзисторы... MJE344G , MJE371G , MJE4343G , MJE5730G , MJE5731AG , MJE5731G , MJE5742G , MJE5850G , 2SC2240 , MJE5852G , MJE6040T , MJE6041T , MJE6042T , MJE6043T , MJE6045T , MJE700G , MJE702G .
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n mosfet | lm317t datasheet | irf540 | bc337 | ksc1845 | c1815 transistor | 2sc1815 | irfz44







