Биполярный транзистор MJE5852G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJE5852G
Маркировка: MJE5852
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 270 pf
Статический коэффициент передачи тока (hfe): 5
Корпус транзистора: TO220AB
MJE5852G Datasheet (PDF)
mje5852g.pdf
MJE5850, MJE5851,MJE5852SWITCHMODE SeriesPNP Silicon PowerTransistorshttp://onsemi.comThe MJE5850, MJE5851 and the MJE5852 transistors are designedfor high-voltage, high-speed, power switching in inductive circuits8 AMPEREwhere fall time is critical. They are particularly suited for line operatedSWITCHMODE applications.PCP SILICONPOWER TRANSISTORSFeatures300-350-400
mje5852.pdf
MJE5852HIGH VOLTAGE PNP POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITYAPPLICATIONS: SWITCHING REGULATORS MOTOR CONTROL INVERTERS 321DESCRIPTION The MJE5852 is manufactured using HighTO-220Voltage PNP Multi-Epitaxial technology for highswitching speed and high voltage capability.It is intended for use in hi
mje5850 mje5851 mje5852.pdf
MJE5850, MJE5851,MJE5852Switch-mode Series PNPSilicon Power TransistorsThe MJE5850, MJE5851 and the MJE5852 transistors are designedfor high-voltage, high-speed, power switching in inductive circuitswww.onsemi.comwhere fall time is critical. They are particularly suited for line operatedswitch-mode applications.8 AMPEREFeaturesPCP SILICON Switching RegulatorsPOWER T
mje5850r.pdf
Order this documentMOTOROLAby MJE5850/DSEMICONDUCTOR TECHNICAL DATAMJE5850*MJE5851Designer's Data SheetMJE5852*SWITCHMODE Series*Motorola Preferred DevicePNP Silicon Power Transistors8 AMPEREThe MJE5850, MJE5851 and the MJE5852 transistors are designed for highvolt-PNP SILICONage, highspeed, power switching in inductive circuits where fall time is critic
mje5851g.pdf
MJE5850, MJE5851,MJE5852SWITCHMODE SeriesPNP Silicon PowerTransistorshttp://onsemi.comThe MJE5850, MJE5851 and the MJE5852 transistors are designedfor high-voltage, high-speed, power switching in inductive circuits8 AMPEREwhere fall time is critical. They are particularly suited for line operatedSWITCHMODE applications.PCP SILICONPOWER TRANSISTORSFeatures300-350-400
mje5850g.pdf
MJE5850, MJE5851,MJE5852SWITCHMODE SeriesPNP Silicon PowerTransistorshttp://onsemi.comThe MJE5850, MJE5851 and the MJE5852 transistors are designedfor high-voltage, high-speed, power switching in inductive circuits8 AMPEREwhere fall time is critical. They are particularly suited for line operatedSWITCHMODE applications.PCP SILICONPOWER TRANSISTORSFeatures300-350-400
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050