MJE5852G datasheet, аналоги, основные параметры

Наименование производителя: MJE5852G  📄📄 

Маркировка: MJE5852

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 80 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Ёмкость коллекторного перехода (Cc): 270 pf

Статический коэффициент передачи тока (hFE): 5

Корпус транзистора: TO220AB

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MJE5852G даташит

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MJE5852G

MJE5850, MJE5851, MJE5852 SWITCHMODE Series PNP Silicon Power Transistors http //onsemi.com The MJE5850, MJE5851 and the MJE5852 transistors are designed for high-voltage, high-speed, power switching in inductive circuits 8 AMPERE where fall time is critical. They are particularly suited for line operated SWITCHMODE applications. PCP SILICON POWER TRANSISTORS Features 300-350-400

 7.1. Size:58K  st
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MJE5852G

MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL INVERTERS 3 2 1 DESCRIPTION The MJE5852 is manufactured using High TO-220 Voltage PNP Multi-Epitaxial technology for high switching speed and high voltage capability. It is intended for use in hi

 7.2. Size:247K  onsemi
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MJE5852G

MJE5850, MJE5851, MJE5852 Switch-mode Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high-voltage, high-speed, power switching in inductive circuits www.onsemi.com where fall time is critical. They are particularly suited for line operated switch-mode applications. 8 AMPERE Features PCP SILICON Switching Regulators POWER T

 8.1. Size:302K  motorola
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MJE5852G

Order this document MOTOROLA by MJE5850/D SEMICONDUCTOR TECHNICAL DATA MJE5850 * MJE5851 Designer's Data Sheet MJE5852 * SWITCHMODE Series *Motorola Preferred Device PNP Silicon Power Transistors 8 AMPERE The MJE5850, MJE5851 and the MJE5852 transistors are designed for high volt- PNP SILICON age, high speed, power switching in inductive circuits where fall time is critic

Другие транзисторы: MJE371G, MJE4343G, MJE5730G, MJE5731AG, MJE5731G, MJE5742G, MJE5850G, MJE5851G, 2SA1015, MJE6040T, MJE6041T, MJE6042T, MJE6043T, MJE6045T, MJE700G, MJE702G, MJE703G