MJE5852G Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE5852G
SMD Transistor Code: MJE5852
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 270 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO220AB
MJE5852G Transistor Equivalent Substitute - Cross-Reference Search
MJE5852G Datasheet (PDF)
mje5852g.pdf
MJE5850, MJE5851,MJE5852SWITCHMODE SeriesPNP Silicon PowerTransistorshttp://onsemi.comThe MJE5850, MJE5851 and the MJE5852 transistors are designedfor high-voltage, high-speed, power switching in inductive circuits8 AMPEREwhere fall time is critical. They are particularly suited for line operatedSWITCHMODE applications.PCP SILICONPOWER TRANSISTORSFeatures300-350-400
mje5852.pdf
MJE5852HIGH VOLTAGE PNP POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITYAPPLICATIONS: SWITCHING REGULATORS MOTOR CONTROL INVERTERS 321DESCRIPTION The MJE5852 is manufactured using HighTO-220Voltage PNP Multi-Epitaxial technology for highswitching speed and high voltage capability.It is intended for use in hi
mje5850 mje5851 mje5852.pdf
MJE5850, MJE5851,MJE5852Switch-mode Series PNPSilicon Power TransistorsThe MJE5850, MJE5851 and the MJE5852 transistors are designedfor high-voltage, high-speed, power switching in inductive circuitswww.onsemi.comwhere fall time is critical. They are particularly suited for line operatedswitch-mode applications.8 AMPEREFeaturesPCP SILICON Switching RegulatorsPOWER T
mje5850r.pdf
Order this documentMOTOROLAby MJE5850/DSEMICONDUCTOR TECHNICAL DATAMJE5850*MJE5851Designer's Data SheetMJE5852*SWITCHMODE Series*Motorola Preferred DevicePNP Silicon Power Transistors8 AMPEREThe MJE5850, MJE5851 and the MJE5852 transistors are designed for highvolt-PNP SILICONage, highspeed, power switching in inductive circuits where fall time is critic
mje5851g.pdf
MJE5850, MJE5851,MJE5852SWITCHMODE SeriesPNP Silicon PowerTransistorshttp://onsemi.comThe MJE5850, MJE5851 and the MJE5852 transistors are designedfor high-voltage, high-speed, power switching in inductive circuits8 AMPEREwhere fall time is critical. They are particularly suited for line operatedSWITCHMODE applications.PCP SILICONPOWER TRANSISTORSFeatures300-350-400
mje5850g.pdf
MJE5850, MJE5851,MJE5852SWITCHMODE SeriesPNP Silicon PowerTransistorshttp://onsemi.comThe MJE5850, MJE5851 and the MJE5852 transistors are designedfor high-voltage, high-speed, power switching in inductive circuits8 AMPEREwhere fall time is critical. They are particularly suited for line operatedSWITCHMODE applications.PCP SILICONPOWER TRANSISTORSFeatures300-350-400
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
