All Transistors. MJE5852G Datasheet

 

MJE5852G Datasheet and Replacement


   Type Designator: MJE5852G
   SMD Transistor Code: MJE5852
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 270 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO220AB
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MJE5852G Datasheet (PDF)

 ..1. Size:205K  onsemi
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MJE5852G

MJE5850, MJE5851,MJE5852SWITCHMODE SeriesPNP Silicon PowerTransistorshttp://onsemi.comThe MJE5850, MJE5851 and the MJE5852 transistors are designedfor high-voltage, high-speed, power switching in inductive circuits8 AMPEREwhere fall time is critical. They are particularly suited for line operatedSWITCHMODE applications.PCP SILICONPOWER TRANSISTORSFeatures300-350-400

 7.1. Size:58K  st
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MJE5852G

MJE5852HIGH VOLTAGE PNP POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITYAPPLICATIONS: SWITCHING REGULATORS MOTOR CONTROL INVERTERS 321DESCRIPTION The MJE5852 is manufactured using HighTO-220Voltage PNP Multi-Epitaxial technology for highswitching speed and high voltage capability.It is intended for use in hi

 7.2. Size:247K  onsemi
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MJE5852G

MJE5850, MJE5851,MJE5852Switch-mode Series PNPSilicon Power TransistorsThe MJE5850, MJE5851 and the MJE5852 transistors are designedfor high-voltage, high-speed, power switching in inductive circuitswww.onsemi.comwhere fall time is critical. They are particularly suited for line operatedswitch-mode applications.8 AMPEREFeaturesPCP SILICON Switching RegulatorsPOWER T

 8.1. Size:302K  motorola
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MJE5852G

Order this documentMOTOROLAby MJE5850/DSEMICONDUCTOR TECHNICAL DATAMJE5850*MJE5851Designer's Data SheetMJE5852*SWITCHMODE Series*Motorola Preferred DevicePNP Silicon Power Transistors8 AMPEREThe MJE5850, MJE5851 and the MJE5852 transistors are designed for highvolt-PNP SILICONage, highspeed, power switching in inductive circuits where fall time is critic

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: CV7342 | MRF5812 | GT250-3A | 2SB1386 | 2SD1906R | MCH3245 | 2N1893

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