3DD13003U3D datasheet, аналоги, основные параметры
Наименование производителя: 3DD13003U3D 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 350 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 1.8 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 4 MHz
Статический коэффициент передачи тока (hFE): 15
Корпус транзистора: TO251
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Аналоги (замена) для 3DD13003U3D
- подборⓘ биполярного транзистора по параметрам
3DD13003U3D даташит
..1. Size:148K crhj
3dd13003u3d.pdf 
NPN R 3DD13003 U3D 3DD13003 U3D VCEO 200 V NPN IC 1.8 A Ptot TC=25 30 W
5.1. Size:183K crhj
3dd13003u1d.pdf 
NPN R 3DD13003 U1D 3DD13003 U1D VCEO 200 V NPN IC 1.8 A Ptot Ta=25 0.8 W
5.2. Size:151K crhj
3dd13003u6d.pdf 
NPN R 3DD13003 U6D 3DD13003 U6D VCEO 200 V NPN IC 1.8 A Ptot TC=25 35 W
6.1. Size:2520K secos
3dd13003b.pdf 
3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 Collector E 0.36 0.56 2 E C F 0.36 0.51 F G 1.27 TYP. H 1.10 - J 2
6.2. Size:711K jiangsu
3dd13003b.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13003B TRANSISTOR( NPN ) 1. EMITTER 2. COLLECTOR FEATURES 3. BASE power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Vol
6.3. Size:5166K jiangsu
3dd13003.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR ( NPN ) TO-252-2L FEATURES 1. BASE Power Switching Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base V
6.4. Size:812K jiangsu
3dd13003n3.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistor 3DD13003N3 TRANSISTOR (NPN) TO-126 FEATURES 1 . BASE Power switching applications Good high temperature 2. COLLECTOR Low saturation voltage 3. EMITTER High speed switching Equivalent Circuit Logo 13003N3=Device code 13003N3 ORDERING INFORMATION Part Number Package Packi
6.5. Size:246K lge
3dd13003 to-220-3l.pdf 
3DD13003(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuou
6.6. Size:205K lge
3dd13003 to-126.pdf 
3DD13003(NPN) TO-126 Transistor TO-126 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.500 7.400 2.900 1.100 7.800 Symbol Parameter Value Units 1.500 VCBO Collector-Base Voltage 700 V 3.900 3.000 4.100 VCEO Collector-Emitter Voltage 400 V 3.200 10.600 0.000 VEBO Emitter-Base V
6.7. Size:183K lge
3dd13003b.pdf 
3DD13003B(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 2. COLLECTOR 5.21 3. BASE 4.32 2.92 5.33 MIN Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18 2.03 4.19 Symbol Parameter Value Units 2.67 1.14 VCBO Collector-Base Voltage 700 V 1.40 2.03 2.67 VCEO Collector-Emitter Voltage 400 V
6.8. Size:140K wietron
3dd13003b.pdf 
WEITRON 3DD13003B NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES power switching applications TO-92 MAXIMUM RATINGS (T unless otherwise noted) A=25 C Parameter Symbol Value Units Collector-Base Voltage V VCBO 700 Collector-Emitter Voltage V VCEO 400 Emitter-Base Voltage 9 V VEBO A Collector Current -Continuous IC 1.5 Col
6.9. Size:761K jilin sino
3dd13003a.pdf 
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13003A MAIN CHARACTERISTICS Package I 1.5A C V 450V CEO P (TO-92) 1W C P (DPAK/IPAK) 10W C P (TO-126) 20W C P (TO-220) 40W C TO-92-FJ TO-126 APPLICATIONS TO-220 IPAK Battery changer Electronic ballast
6.10. Size:416K jilin sino
3dd13003v1d.pdf 
NPN MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13003V1D APPLICATIONS Package Energy-saving ligh Electronic ballasts Electronic transformer Commonly power amplifier circuit FEATURES M
6.12. Size:418K blue-rocket-elect
br3dd13003vk1k.pdf 
MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore
6.13. Size:446K blue-rocket-elect
br3dd13003vk7r.pdf 
MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V
6.16. Size:155K crhj
3dd13003m8d.pdf 
NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60
6.18. Size:149K crhj
3dd13003f3d.pdf 
NPN R 3DD13003 F3D 3DD13003 F3D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 30 W
6.22. Size:153K crhj
3dd13003 k8.pdf 
NPN R 3DD13003 K8 3DD13003 K8 NPN VCEO 400 V IC 1.8 A Ptot TC=25 60 W
6.23. Size:151K crhj
3dd13003h6d.pdf 
NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W
6.25. Size:153K crhj
3dd13003 m6d.pdf 
NPN R 3DD13003 M6D 3DD13003 M6D NPN VCEO 400 V IC 2 A Ptot TC=25 50 W
6.29. Size:317K crhj
3dd13003h3d.pdf 
R NPN 3DD13003H3D 1 3DD13003H3D NPN VCEO 400 V IC 1.8 A Ptot TC=25
6.41. Size:152K crhj
3dd13003 k6.pdf 
NPN R 3DD13003 K6 3DD13003 K6 NPN VCEO 400 V IC 1.8 A Ptot TC=25 50 W
6.43. Size:151K crhj
3dd13003m6d.pdf 
NPN R 3DD13003 M6D 3DD13003 M6D NPN VCEO 400 V IC 2 A Ptot W TC=25 50
6.44. Size:153K crhj
3dd13003 f6d.pdf 
NPN R 3DD13003 F6D 3DD13003 F6D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 50 W
6.48. Size:153K crhj
3dd13003h8d.pdf 
NPN R 3DD13003 H8D 3DD13003 H8D VCEO 400 V NPN IC 1.8 A Ptot TC=25 60 W
6.51. Size:183K crhj
3dd13003 u1d.pdf 
NPN R 3DD13003 U1D 3DD13003 U1D VCEO 200 V NPN IC 1.8 A Ptot Ta=25 0.8 W
6.55. Size:150K crhj
3dd13003e6d.pdf 
NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W
6.56. Size:155K crhj
3dd13003 m8d.pdf 
NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60
6.59. Size:148K crhj
3dd13003 u3d.pdf 
NPN R 3DD13003 U3D 3DD13003 U3D VCEO 200 V NPN IC 1.8 A Ptot TC=25 30 W
6.61. Size:1159K kexin
3dd13003.pdf 
SMD Type Transistors NPN Transistors 3DD13003 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=400V 0.42 0.1 0.46 0.1 Power Switching Applications 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emi
6.63. Size:151K wuxi china
3dd13003h6d.pdf 
NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W
6.67. Size:150K wuxi china
3dd13003e6d.pdf 
NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W
Другие транзисторы: 3DD13003J8D, 3DD13003K6, 3DD13003K8, 3DD13003M6D, 3DD13003M8D, 3DD13003S1D, 3DD13003SUD, 3DD13003U1D, 2SC2383, 3DD13003U6D, 3DD13003V1D, 3DD13003V6D, 3DD13003VUD, 3DD13003W3D, 3DD13003W6D, 3DD13003X1, 3DD13005A1
