3DD13009AN. Аналоги и основные параметры
Наименование производителя: 3DD13009AN
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 120 W
Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 4 MHz
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: TO3P
Аналоги (замена) для 3DD13009AN
- подборⓘ биполярного транзистора по параметрам
3DD13009AN даташит
..3. Size:1254K cn xch
3dd13009an.pdf 
3DD13009AN NPN Main Characteristics VCEO 400 V IC 12 A Ptot TC=25 120 W Applications Energy-saving light Electronic lamp ballasts Electronic transformer High frequency switching power supply TO-3P Commonly power am
5.1. Size:153K crhj
3dd13009a8.pdf 
NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W
5.2. Size:164K wuxi china
3dd13009a8.pdf 
NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W
6.1. Size:198K lge
3dd13009.pdf 
3DD13009(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters) IC Collector Current -Contin
6.3. Size:845K jilin sino
3dd13009e.pdf 
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009E MAIN CHARACTERISTICS Package I 12A C V 400V CEO P (TO-220C) 100W C P (TO-3PB) 120W C TO-220C-S1 TO-220C APPLICATIONS Energy-saving ligh Electronic ballasts High fre
6.5. Size:423K blue-rocket-elect
br3dd13009x8f.pdf 
MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.
6.6. Size:463K blue-rocket-elect
br3dd13009x7r.pdf 
MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications .
6.7. Size:445K blue-rocket-elect
br3dd13009x9p.pdf 
MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit
6.12. Size:153K crhj
3dd13009 a8.pdf 
NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W
6.13. Size:155K crhj
3dd13009x8d.pdf 
NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W
6.14. Size:210K inchange semiconductor
3dd13009k.pdf 
isc Silicon NPN Power Transistor 3DD13009K DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM
6.15. Size:253K inchange semiconductor
3dd13009n.pdf 
isc Silicon NPN Power Transistor 3DD13009N DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
6.16. Size:253K inchange semiconductor
3dd13009nl.pdf 
isc Silicon NPN Power Transistor 3DD13009NL DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
6.17. Size:216K inchange semiconductor
3dd13009.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD13009 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.5 (Max) @ I = 8.0A CE(sat) C Switching Time t = 0.7 s(Max.)@ I = 8.0A f C 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desig
Другие транзисторы: 3DD13007B8, 3DD13007H8D, 3DD13007X1, 3DD13007Y8, 3DD13007Z7, 3DD13007Z8, 3DD13009, 3DD13009A8, A1015, 3DD13009C8, 3DD13009X8D, 3DD13012A8, 3DD13012AN, 3DD137, 3DD14A, 3DD15, 3DD151
