Биполярный транзистор 3DD13009AN
Даташит. Аналоги
Наименование производителя: 3DD13009AN
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 120
W
Макcимально допустимое напряжение коллектор-база (Ucb): 700
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9
V
Макcимальный постоянный ток коллектора (Ic): 12
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 4
MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора:
TO3P
Аналог (замена) для 3DD13009AN
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подбор ⓘ биполярного транзистора по параметрам
3DD13009AN
Datasheet (PDF)
..1. Size:159K crhj
3dd13009an.pdf 
NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W
..2. Size:155K wuxi china
3dd13009an.pdf 
NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W
..3. Size:1254K cn xch
3dd13009an.pdf 
3DD13009ANNPN Main Characteristics VCEO 400 V IC 12 A Ptot TC=25 120 W Applications Energy-saving light Electronic lamp ballasts Electronic transformer High frequency switching power supplyTO-3P Commonly power am
5.1. Size:153K crhj
3dd13009a8.pdf 
NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W
5.2. Size:164K wuxi china
3dd13009a8.pdf 
NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W
6.1. Size:198K lge
3dd13009.pdf 
3DD13009(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters)IC Collector Current -Contin
6.2. Size:596K jilin sino
3dd13009k.pdf 
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13009K MAIN CHARACTERISTICS Package I 12A CV 400V CEOP (TO-220C) 100W CP (TO-3PB) 120W C APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power
6.3. Size:845K jilin sino
3dd13009e.pdf 
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13009E MAIN CHARACTERISTICS Package I 12A CV 400V CEOP (TO-220C) 100W CP (TO-3PB) 120W CTO-220C-S1 TO-220C APPLICATIONS Energy-saving ligh Electronic ballasts High fre
6.4. Size:449K blue-rocket-elect
br3dd13009z8f.pdf 
MJE13009Z8(BR3DD13009Z8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.
6.5. Size:423K blue-rocket-elect
br3dd13009x8f.pdf 
MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.
6.6. Size:463K blue-rocket-elect
br3dd13009x7r.pdf 
MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications .
6.7. Size:445K blue-rocket-elect
br3dd13009x9p.pdf 
MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit
6.8. Size:153K crhj
3dd13009c8.pdf 
NPN R 3DD13009 C8 3DD13009 C8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W
6.9. Size:154K crhj
3dd13009 x8d.pdf 
NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W
6.10. Size:155K crhj
3dd13009 an.pdf 
NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W
6.11. Size:154K crhj
3dd13009 c8.pdf 
NPN R 3DD13009 C8 3DD13009 C8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W
6.12. Size:153K crhj
3dd13009 a8.pdf 
NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W
6.13. Size:155K crhj
3dd13009x8d.pdf 
NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W
6.14. Size:210K inchange semiconductor
3dd13009k.pdf 
isc Silicon NPN Power Transistor 3DD13009KDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighElectronic ballastsHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYM
6.15. Size:253K inchange semiconductor
3dd13009n.pdf 
isc Silicon NPN Power Transistor 3DD13009NDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
6.16. Size:253K inchange semiconductor
3dd13009nl.pdf 
isc Silicon NPN Power Transistor 3DD13009NLDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
6.17. Size:216K inchange semiconductor
3dd13009.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CSwitching Time: t = 0.7s(Max.)@ I = 8.0Af C100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig
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