3DD13009AN Datasheet and Replacement

   Type Designator: 3DD13009AN
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3P

3DD13009AN Substitution

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3DD13009AN Datasheet (PDF)

..1. Size:159K crhj
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NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W

..2. Size:155K wuxi china
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NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W

..3. Size:1254K cn xch
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3DD13009ANNPN Main Characteristics VCEO 400 V IC 12 A Ptot TC=25 120 W Applications Energy-saving light Electronic lamp ballasts Electronic transformer High frequency switching power supplyTO-3P Commonly power am

5.1. Size:153K crhj
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NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

5.2. Size:164K wuxi china
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NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

6.1. Size:198K lge
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3DD13009(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters)IC Collector Current -Contin

6.2. Size:596K jilin sino
3dd13009k.pdf pdf_icon

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13009K MAIN CHARACTERISTICS Package I 12A CV 400V CEOP (TO-220C) 100W CP (TO-3PB) 120W C APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power

6.3. Size:845K jilin sino
3dd13009e.pdf pdf_icon

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13009E MAIN CHARACTERISTICS Package I 12A CV 400V CEOP (TO-220C) 100W CP (TO-3PB) 120W CTO-220C-S1 TO-220C APPLICATIONS Energy-saving ligh Electronic ballasts High fre

6.4. Size:449K blue-rocket-elect
br3dd13009z8f.pdf pdf_icon

MJE13009Z8(BR3DD13009Z8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

6.5. Size:423K blue-rocket-elect
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MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

6.6. Size:463K blue-rocket-elect
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MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications .

6.7. Size:445K blue-rocket-elect
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MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

6.8. Size:153K crhj
3dd13009c8.pdf pdf_icon

NPN R 3DD13009 C8 3DD13009 C8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

6.9. Size:154K crhj
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NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W

6.10. Size:155K crhj
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NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W

6.11. Size:154K crhj
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NPN R 3DD13009 C8 3DD13009 C8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

6.12. Size:153K crhj
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NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

6.13. Size:155K crhj
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NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W

6.14. Size:210K inchange semiconductor
3dd13009k.pdf pdf_icon

isc Silicon NPN Power Transistor 3DD13009KDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighElectronic ballastsHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYM

6.15. Size:253K inchange semiconductor
3dd13009n.pdf pdf_icon

isc Silicon NPN Power Transistor 3DD13009NDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

6.16. Size:253K inchange semiconductor
3dd13009nl.pdf pdf_icon

isc Silicon NPN Power Transistor 3DD13009NLDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

6.17. Size:216K inchange semiconductor
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CSwitching Time: t = 0.7s(Max.)@ I = 8.0Af C100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .