3DD8 - описание и поиск аналогов

3DD8E T NPN PCM TC 75 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1.0 /W IC=3A V(BR)CBO ICB=5mA 350 V V(BR)CEO ICE=5mA 250 V V(BR)EBO IEB=5mA 5.0 V ICEO VCE=100V 5.0 mA IC=5A VCEsat 1.5 V IB=0.5A VCE=5V hFE 7 180

3DD831 NPN PCM TC=75 5 W ICM 2 A Tjm 175 Tstg -55 150 VCE=10V Rth 20 /W IC=0.2A V(BR)CBO ICB=1mA 50 V V(BR)CEO ICE=1mA 45 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=50V 0.5 mA ICEO VCE=30V 1.0 mA IEBO VEB=4V 0.5 mA VBEsat 1.2 IC

3DD810 NPN PCM Tc=75 50 W ICM 8 A Tjm 175 Tstg -55 150 VCE=10V Rth 2.0 /W Ic=5.0A 25 Tc 75 V(BR)CBO ICB=5mA 150 V V(BR)CEO ICE=5mA 100 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=50V, 1.5 A ICEO VCE=50V 2.0 mA IEBO VEB=4.0V 1.5

3DD820 NPN PCM Tc=75 50 W ICM 5 A Tjm 150 Tstg -55 150 VCE=10V Rth 2.5 /W Ic=2.5A 25 Tc 75 V(BR)CBO ICB=5mA 1500 V V(BR)CEO ICE=5mA 600 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=VCBO, 1.0 mA ICEO VCE=0.5VCEO 1.0 mA Ic=4A VCEsat

isc Silicon NPN Power Transistor 3DD8D DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2V(Max) @I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUT

isc Silicon NPN Power Transistors 3DD880X DESCRIPTION X DC Current Gain -h = 55-75@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

isc Silicon NPN Power Transistors 3DD880 DESCRIPTION DC Current Gain -h = 60-300@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR