3DD8 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD8
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3 TO258
3DD8 Transistor Equivalent Substitute - Cross-Reference Search
3DD8 Datasheet (PDF)
3dd8.pdf
3DD8 NPN A B C D E F PCM TC=75 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1 /W IC=3.5A V(BR)CBO ICB=10mA 30 50 80 110 150 200 V V(BR)CEO ICE=10mA 30 50 80 110 150 200 V V(BR)EBO IEB=15mA 5.0 V ICBO VCB=20V 2.0 mA
3dd8e.pdf
3DD8ET NPN PCM TC75 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.0 /W IC=3A V(BR)CBO ICB=5mA 350 V V(BR)CEO ICE=5mA 250 V V(BR)EBO IEB=5mA 5.0 V ICEO VCE=100V 5.0 mA IC=5A VCEsat 1.5 V IB=0.5A VCE=5V hFE 7180
3dd831.pdf
3DD831 NPN PCM TC=75 5 W ICM 2 A Tjm 175 Tstg -55~150 VCE=10V Rth 20 /W IC=0.2A V(BR)CBO ICB=1mA 50 V V(BR)CEO ICE=1mA 45 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=50V 0.5 mA ICEO VCE=30V 1.0 mA IEBO VEB=4V 0.5 mA VBEsat 1.2 IC
3dd810.pdf
3DD810 NPN PCM Tc=75 50 W ICM 8 A Tjm 175 Tstg -55~150 VCE=10V Rth 2.0 /W Ic=5.0A 25Tc75 V(BR)CBO ICB=5mA 150 V V(BR)CEO ICE=5mA 100 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=50V, 1.5 A ICEO VCE=50V 2.0 mA IEBO VEB=4.0V 1.5
3dd820.pdf
3DD820 NPN PCM Tc=75 50 W ICM 5 A Tjm 150 Tstg -55~150 VCE=10V Rth 2.5 /W Ic=2.5A 25Tc75 V(BR)CBO ICB=5mA 1500 V V(BR)CEO ICE=5mA 600 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=VCBO, 1.0 mA ICEO VCE=0.5VCEO 1.0 mA Ic=4A VCEsat
3dd8d.pdf
isc Silicon NPN Power Transistor 3DD8DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2V(Max) @I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier, low speed switching andregulated power supply applications.ABSOLUT
3dd880x.pdf
isc Silicon NPN Power Transistors 3DD880XDESCRIPTIONX: DC Current Gain -h = 55-75@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
3dd880.pdf
isc Silicon NPN Power Transistors 3DD880DESCRIPTIONDC Current Gain -h = 60-300@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
