Биполярный транзистор 3DD9
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 3DD9
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 150
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 15
A
Предельная температура PN-перехода (Tj): 175
°C
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора:
TO3
- подбор биполярного транзистора по параметрам
3DD9
Datasheet (PDF)
..1. Size:28K shaanxi
3dd9.pdf 

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD9NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4.
0.1. Size:153K china
3dd9d.pdf 

3DD9DT NPN PCM TC75 150 W ICM 15 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=10mA 250 V V(BR)CEO ICE=10mA 200 V V(BR)EBO IEB=20mA 3.0 V ICEO VCE=30V 3.0 mA VBEsat 1.8 IC=7.5A V IB=1.5A VCEsat 2.0 VCE=10V hFE 10~150 IC=7.5A
0.2. Size:149K china
3dd99.pdf 

3DD99(3DD100) NPN A B C D E PCM Tc=75 20 W ICM 1.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 5 /W IC=0.5A V(BR)CBO ICE=1mA 150 200 250 300 350 V V(BR)CEO ICE=1mA 100 150 200 250 300 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=50V 0.5 mA
0.3. Size:154K china
3dd9e.pdf 

3DD9ET NPN PCM TC75 150 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.67 /W IC=3A V(BR)CBO ICB=5mA 350 V V(BR)CEO ICE=5mA 250 V V(BR)EBO IEB=10mA 5.0 V ICEO VCE=100V 5.0 mA IC=7.5A VCEsat 1.5 V IB=0.75A VCE=5V hFE 7
0.4. Size:23K shaanxi
d3dd9d.pdf 

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China D3DD9DNPN Silicon Darlington High Power Transistor Features: 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a
0.5. Size:193K inchange semiconductor
3dd9d.pdf 


INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA
0.6. Size:193K inchange semiconductor
3dd9g.pdf 


INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9GDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA
0.7. Size:193K inchange semiconductor
3dd9a.pdf 


INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9ADESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA
0.8. Size:193K inchange semiconductor
3dd9c.pdf 


INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA
0.9. Size:193K inchange semiconductor
3dd9i.pdf 


INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9IDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA
0.10. Size:193K inchange semiconductor
3dd9b.pdf 


INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA
0.11. Size:193K inchange semiconductor
3dd9h.pdf 


INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9HDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA
0.12. Size:193K inchange semiconductor
3dd9e.pdf 


INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA
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