Аналоги 3DD9. Основные параметры
Наименование производителя: 3DD9
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 150
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 15
A
Предельная температура PN-перехода (Tj): 175
°C
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора:
TO3
Аналоги (замена) для 3DD9
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подбор ⓘ биполярного транзистора по параметрам
3DD9 даташит
..1. Size:28K shaanxi
3dd9.pdf 

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD9 NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4.
0.1. Size:153K china
3dd9d.pdf 

3DD9D T NPN PCM TC 75 150 W ICM 15 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=10mA 250 V V(BR)CEO ICE=10mA 200 V V(BR)EBO IEB=20mA 3.0 V ICEO VCE=30V 3.0 mA VBEsat 1.8 IC=7.5A V IB=1.5A VCEsat 2.0 VCE=10V hFE 10 150 IC=7.5A
0.4. Size:23K shaanxi
d3dd9d.pdf 

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China D3DD9D NPN Silicon Darlington High Power Transistor Features 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a
0.5. Size:193K inchange semiconductor
3dd9d.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD9D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications A
0.6. Size:193K inchange semiconductor
3dd9g.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD9G DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications A
0.7. Size:193K inchange semiconductor
3dd9a.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD9A DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications A
0.8. Size:193K inchange semiconductor
3dd9c.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD9C DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications A
0.9. Size:193K inchange semiconductor
3dd9i.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD9I DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications A
0.10. Size:193K inchange semiconductor
3dd9b.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD9B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications A
0.11. Size:193K inchange semiconductor
3dd9h.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD9H DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications A
0.12. Size:193K inchange semiconductor
3dd9e.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD9E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications A
Другие транзисторы... 3DD741A8
, 3DD742A8
, 3DD7525A3
, 3DD8
, 3DD810
, 3DD820
, 3DD831
, 3DD8E
, B772
, 3DD99
, 3DD9D
, 3DD9E
, 3DF05
, 3DF1
, 3DF5
, 3DG100
, 3DG1009A
.