Справочник транзисторов. 3DD9

 

Биполярный транзистор 3DD9 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 3DD9
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 150 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 175 °C
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO3

 Аналоги (замена) для 3DD9

 

 

3DD9 Datasheet (PDF)

 ..1. Size:28K  shaanxi
3dd9.pdf

3DD9

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD9NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4.

 0.1. Size:153K  china
3dd9d.pdf

3DD9

3DD9DT NPN PCM TC75 150 W ICM 15 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=10mA 250 V V(BR)CEO ICE=10mA 200 V V(BR)EBO IEB=20mA 3.0 V ICEO VCE=30V 3.0 mA VBEsat 1.8 IC=7.5A V IB=1.5A VCEsat 2.0 VCE=10V hFE 10~150 IC=7.5A

 0.2. Size:149K  china
3dd99.pdf

3DD9

3DD99(3DD100) NPN A B C D E PCM Tc=75 20 W ICM 1.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 5 /W IC=0.5A V(BR)CBO ICE=1mA 150 200 250 300 350 V V(BR)CEO ICE=1mA 100 150 200 250 300 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=50V 0.5 mA

 0.3. Size:154K  china
3dd9e.pdf

3DD9

3DD9ET NPN PCM TC75 150 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.67 /W IC=3A V(BR)CBO ICB=5mA 350 V V(BR)CEO ICE=5mA 250 V V(BR)EBO IEB=10mA 5.0 V ICEO VCE=100V 5.0 mA IC=7.5A VCEsat 1.5 V IB=0.75A VCE=5V hFE 7

 0.4. Size:23K  shaanxi
d3dd9d.pdf

3DD9

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China D3DD9DNPN Silicon Darlington High Power Transistor Features: 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a

 0.5. Size:193K  inchange semiconductor
3dd9d.pdf

3DD9
3DD9

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA

 0.6. Size:193K  inchange semiconductor
3dd9g.pdf

3DD9
3DD9

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9GDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA

 0.7. Size:193K  inchange semiconductor
3dd9a.pdf

3DD9
3DD9

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9ADESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA

 0.8. Size:193K  inchange semiconductor
3dd9c.pdf

3DD9
3DD9

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA

 0.9. Size:193K  inchange semiconductor
3dd9i.pdf

3DD9
3DD9

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9IDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA

 0.10. Size:193K  inchange semiconductor
3dd9b.pdf

3DD9
3DD9

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA

 0.11. Size:193K  inchange semiconductor
3dd9h.pdf

3DD9
3DD9

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9HDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA

 0.12. Size:193K  inchange semiconductor
3dd9e.pdf

3DD9
3DD9

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top