All Transistors. 3DD9 Datasheet

 

3DD9 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DD9

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

3DD9 Transistor Equivalent Substitute - Cross-Reference Search

 

3DD9 Datasheet (PDF)

1.1. d3dd9d.pdf Size:23K _upd

3DD9

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China D3DD9D NPN Silicon Darlington High Power Transistor Features: 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a

1.2. 3dd99.pdf Size:149K _china

3DD9

3DD99(3DD100)型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM Tc=75℃ 20 W ICM 1.5 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 5 ℃/W IC=0.5A V(BR)CBO ICE=1mA ≥150 ≥200 ≥250 ≥300 ≥350 V V(BR)CEO ICE=1mA ≥100 ≥150 ≥200 ≥250 ≥300 V V(BR)EBO IEB=1mA ≥5.0 V ICBO VCB=50V ≤0.5 mA 直

1.3. 3dd9e.pdf Size:154K _china

3DD9

3DD9E—T 型 NPN 硅低频大功率晶体管 参数符号 测试条件 规范值 单位 PCM TC≤75℃ 150 W ICM 15 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 0.67 ℃/W IC=3A V(BR)CBO ICB=5mA ≥350 V V(BR)CEO ICE=5mA ≥250 V V(BR)EBO IEB=10mA ≥5.0 V 直 ICEO VCE=100V ≤5.0 mA 流 参 IC=7.5A VCEsat ≤1.5 V 数 IB=0.75A VCE=5V hFE 7

1.4. 3dd9.pdf Size:28K _china

3DD9

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD9 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4.

1.5. 3dd9d.pdf Size:153K _china

3DD9

3DD9D—T 型 NPN 硅低频大功率晶体管 参数符号 测试条件 规范值 单位 PCM TC≤75℃ 150 W 极 ICM 15 A 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=10mA ≥250 V V(BR)CEO ICE=10mA ≥200 V V(BR)EBO IEB=20mA ≥3.0 V 直 ICEO VCE=30V ≤3.0 mA 流 VBEsat ≤1.8 参 IC=7.5A V 数 IB=1.5A VCEsat ≤2.0 VCE=10V hFE 10~150 IC=7.5A

Datasheet: 3DD741A8 , 3DD742A8 , 3DD7525A3 , 3DD8 , 3DD810 , 3DD820 , 3DD831 , 3DD8E , A1015 , 3DD99 , 3DD9D , 3DD9E , 3DF05 , 3DF1 , 3DF5 , 3DG100 , 3DG1009A .

 


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