3DG3332 - Даташиты. Аналоги. Основные параметры

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DG3332 TRANSISTOR (NPN) TO 92 FEATURES 1.EMITTER Low Current High Voltage 2. COLLECTOR 3.BASE APPLICATIONS Video Telephony Professional Communication Equipment MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180

2SC3330(3DG3330) NPN /SILION NPN TRANSISTOR Purpose Capable of being used in the low frequency to high frequency range. /Features Large current capacity and wide ASO. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V

3DG3399(2SC3399) NPN PCM TA=25 300 mW ICM 100 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.01m 50 V A V(BR)CEO ICE=0.1mA 50 V V(BR)EBO IEB=0.1mA 10 V ICBO VCB=40V 0.1 A ICEO VCB=40V 0.5 A IEBO VEB=5V 80 A IC=5mA VCEsat 0.3 V

2SC3356(3DG3356) NPN /SILION NPN TRANSISTOR Purpose low noise amplifier at VHF, UHF and CATV band applications. Features Low noise and high power gain. /Absolute maximum ratings(Ta=25 ) Symbol Rating Uni

2SC3326(3DG3326) NPN /SILICON NPN TRANSISTOR /Purpose For muting and switching applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 50 V CBO V 20 V CEO V 12 V EBO I 300 mA C I 60 mA B P 150 mW C T 150 j T -55 150 stg /Electrical ch

2SC3355(3DG3355) NPN /SILICON NPN TRANSISTOR Purpose low noise amplifier at VHF, UHF and CATV band applications. Features Low noise and high power gain. /Absolute maximum ratings(Ta=25 ) Symbol Rating U