3DG8 - описание и поиск аналогов

3DG8 NPN A B C D PCM 200 mW ICM 30 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 15 40 40 60 V V(BR)CEO ICE=0.1mA 15 25 25 60 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO 92L 3DG8051 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE Complementary to 3CG8551 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Vol

3DG8050 NPN PCM TA=25 330 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB 0.1mA 30 V V(BR)CEO ICE 0.1mA 25 V V(BR)EBO IEB 0.1mA 6.0 V ICBO VCB=20V 0.1 A VBEsat 1.2 V IC=50mA IB=5mA VCEsat 0.5 V VCE=1V hFE 20 100 IC=0.

3DG82 NPN A B C PCM 500 mW ICM 100 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 30 30 40 V V(BR)CEO ICE=0.1mA 20 20 30 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 1.0 A ICEO VCE=10V 1.0 A IEBO VEB=1.5V 0.5 A VBEsat 1

LJ2015-12 3DG817 NPN P T =25 250 mW CM A I 500 mA C I 1000 mA CM T 150 jm T -55 150 stg V I =0.1mA 50 V (BR)CBO CB V I =10mA 45 V (BR)CEO CE V I =0.1mA 5.0 V (BR)EBO EB I V =20V 0.1 A CBO CB I V =5V 0.1 A EBO EB

S8050M(3DG8050M) NPN /SILICON NPN TRANSISTOR /Purpose Power amplifier applications. S8550M(3CG8550M) /Features Complementary pair with S8550M(3CG8550M). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 40 V CBO V 25 V CEO V 6.0 V EBO I 800 mA C

S8050A(3DG8050A) NPN /SILICON NPN TRANSISTOR Purpose Amplifier of portable radios in class B push-pull operation. P I , S8550A(3CG8550A) C C Features High P ,I , complementary pair with S8550A(3CG8550A). C C /Absolute maximum ratings(Ta=25 ) Symbol Rating