All Transistors. 3DG8 Datasheet

 

3DG8 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG8

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO92_SOT23_TO18

3DG8 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG8 Datasheet (PDF)

1.1. 3dg8.pdf Size:127K _china

3DG8

3DG8 型 NPN 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C D PCM 200 mW 极 ICM 30 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥15 ≥40 ≥40 ≥60 V V(BR)CEO ICE=0.1mA ≥15 ≥25 ≥25 ≥60 V V(BR)EBO IEB=0.1mA ≥4.0 V ICBO VCB=10V ≤0.1 μA 直 ICEO VCE=10V ≤0.1 μA 流 参 IEBO VEB=1.5V ≤0.1 μA 数

1.2. 3dg8050.pdf Size:120K _china

3DG8

3DG8050 型 NPN 硅高频小功率晶体管 参数符号 测试条件 规范值 单位 PCM TA=25℃ 330 mW 极 ICM 300 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥30 V V(BR)CEO ICE=0.1mA ≥25 V V(BR)EBO IEB=0.1mA ≥6.0 V 直 ICBO VCB=20V ≤0.1 μA 流 参 VBEsat ≤1.2 V IC=50mA 数 IB=5mA VCEsat ≤0.5 V VCE=1V hFE 20~100 IC=0.

 1.3. 3dg8051.pdf Size:109K _china

3DG8

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 3DG8051 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE Complementary to 3CG8551 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Vol

1.4. 3dg817.pdf Size:91K _china

3DG8

锦州辽晶电子科技有限公司 LJ2015-12 3DG817 型 NPN 硅高频小功率晶体管 参数符号 测试条件 规范值 单位 P T =25℃ 250 mW CM A I 500 mA C 极 限 I 1000 mA CM 值 T 150 ℃ jm T -55~150 ℃ stg V I =0.1mA ≥50 V (BR)CBO CB V I =10mA ≥45 V (BR)CEO CE V I =0.1mA ≥5.0 V (BR)EBO EB I V =20V ≤0.1 μA 直 CBO CB 流 I V =5V ≤0.1 μA EBO EB

 1.5. 3dg8050m.pdf Size:281K _china

3DG8
3DG8

S8050M(3DG8050M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于功率放大电路。/Purpose: Power amplifier applications. 特点:与 S8550M(3CG8550M)互补。/Features: Complementary pair with S8550M(3CG8550M). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 40 V CBO V 25 V CEO V 6.0 V EBO I 800 mA C

1.6. 3dg847b.pdf Size:124K _china

3DG8

3DG847B(BC847B)型 NPN 硅高频小功率晶体管 参数符号 测试条件 规范值 单位 PCM TA=25℃ 330 mW 极 ICM 200 mA 限 Tjm 150 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.01mA ≥50 V V(BR)CEO ICE=10mA ≥45 V V(BR)EBO IEB=0.001mA ≥6.0 V 直 ICBO VCB=40V ≤15 mA 流 IEBO VEB=5.0V ≤1.0 mA 参 VBEsat ≤0.77 V IC=100mA 数 IB=5mA VCEsat

1.7. 3dg82.pdf Size:119K _china

3DG8

3DG82 型 NPN 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C PCM 500 mW 极 ICM 100 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥30 ≥30 ≥40 V V(BR)CEO ICE=0.1mA ≥20 ≥20 ≥30 V V(BR)EBO IEB=0.1mA ≥4.0 V ICBO VCB=10V ≤1.0 μA 直 ICEO VCE=10V ≤1.0 μA 流 参 IEBO VEB=1.5V ≤0.5 μA 数 VBEsat ≤1

1.8. 3dg8050a.pdf Size:189K _china

3DG8
3DG8

S8050A(3DG8050A) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于乙类推挽功放。 Purpose: Amplifier of portable radios in class B push-pull operation. 特点:P 、I 大,与 S8550A(3CG8550A)互补。 C C Features: High P ,I , complementary pair with S8550A(3CG8550A). C C 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating

Datasheet: 2SA1575 , 2SA1575C , 2SA1575D , 2SA1575E , 2SA1575F , 2SA1576 , 2SA1577 , 2SA1578 , BC547 , 2SA1579P , 2SA1579Q , 2SA1579R , 2SA1579S , 2SA1580-3 , 2SA1580-4 , 2SA1580-5 , 2SA1581 .

 
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