3DG8 Specs and Replacement
Type Designator: 3DG8
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
3DG8 Substitution
- BJT ⓘ Cross-Reference Search
3DG8 datasheet
3DG8 NPN A B C D PCM 200 mW ICM 30 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 15 40 40 60 V V(BR)CEO ICE=0.1mA 15 25 25 60 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A ... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO 92L 3DG8051 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE Complementary to 3CG8551 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Vol... See More ⇒
3DG8050 NPN PCM TA=25 330 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB 0.1mA 30 V V(BR)CEO ICE 0.1mA 25 V V(BR)EBO IEB 0.1mA 6.0 V ICBO VCB=20V 0.1 A VBEsat 1.2 V IC=50mA IB=5mA VCEsat 0.5 V VCE=1V hFE 20 100 IC=0.... See More ⇒
Detailed specifications: 3DG5551 , 3DG5770 , 3DG6 , 3DG639 , 3DG6520 , 3DG718A , 3DG720 , 3DG752TM , TIP41 , 3DG8050 , 3DG8050A , 3DG8050M , 3DG8051 , 3DG817 , 3DG82 , 3DG847B , 3DG9013 .
History: 2SC3585A
Keywords - 3DG8 pdf specs
3DG8 cross reference
3DG8 equivalent finder
3DG8 pdf lookup
3DG8 substitution
3DG8 replacement









