3DG8 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG8
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO92 SOT23 TO18
3DG8 Transistor Equivalent Substitute - Cross-Reference Search
3DG8 Datasheet (PDF)
3dg8.pdf
3DG8 NPN A B C D PCM 200 mW ICM 30 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 15 40 40 60 V V(BR)CEO ICE=0.1mA 15 25 25 60 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A
3dg8051.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO 92L 3DG8051 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE Complementary to 3CG8551 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Vol
3dg8050.pdf
NPN NPN EPITAXIAL SILICON TRANSISTOR R3DG8050 MAIN CHARACTERISTICS Package I 1.5A CV 25V CEOP 1W C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit TO-92
3dg8050.pdf
3DG8050 NPN PCM TA=25 330 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB0.1mA 30 V V(BR)CEO ICE0.1mA 25 V V(BR)EBO IEB0.1mA 6.0 V ICBO VCB=20V 0.1 A VBEsat 1.2 V IC=50mA IB=5mA VCEsat 0.5 V VCE=1V hFE 20~100 IC=0.
3dg847b.pdf
3DG847B(BC847B) NPN PCM TA=25 330 mW ICM 200 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB0.01mA 50 V V(BR)CEO ICE10mA 45 V V(BR)EBO IEB0.001mA 6.0 V ICBO VCB=40V 15 mA IEBO VEB=5.0V 1.0 mA VBEsat 0.77 V IC=100mA IB=5mA VCEsat
3dg82.pdf
3DG82 NPN A B C PCM 500 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 30 30 40 V V(BR)CEO ICE=0.1mA 20 20 30 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 1.0 A ICEO VCE=10V 1.0 A IEBO VEB=1.5V 0.5 A VBEsat 1
3dg817.pdf
LJ2015-123DG817 NPN P T =25 250 mWCM AI 500 mAC I 1000 mACMT 150 jmT -55~150 stgV I =0.1mA 50 V(BR)CBO CBV I =10mA 45 V(BR)CEO CEV I =0.1mA 5.0 V(BR)EBO EBI V =20V 0.1 A CBO CB I V =5V 0.1 AEBO EB
3dg8050m.pdf
S8050M(3DG8050M) NPN /SILICON NPN TRANSISTOR :/Purpose: Power amplifier applications. : S8550M(3CG8550M)/Features: Complementary pair with S8550M(3CG8550M). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 40 V CBO V 25 V CEO V 6.0 V EBO I 800 mA C
3dg8050a.pdf
S8050A(3DG8050A) NPN /SILICON NPN TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , S8550A(3CG8550A) C CFeatures: High P ,I , complementary pair with S8550A(3CG8550A). C C/Absolute maximum ratings(Ta=25) Symbol Rating
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
