Биполярный транзистор PH3134-55L - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PH3134-55L
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 350 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 6.5 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 3400 MHz
Статический коэффициент передачи тока (hfe): 7.5
Корпус транзистора: CERAMIC
Аналоги (замена) для PH3134-55L
PH3134-55L Datasheet (PDF)
ph3134-55l.pdf
PH3134-55L Radar Pulsed Power Transistor M/A-COM Products 55W, 3.1-3.4 GHz, 300s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
ph3134-30s.pdf
PH3134-30S Radar Pulsed Power Transistor M/A-COM Products 30W, 3.1-3.4 GHz, 1s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal
ph3134-65m.pdf
PH3134-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 3.1-3.4 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
ph3134-25m.pdf
PH3134-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 3.1-3.4 GHz, 100s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
ph3134-10m.pdf
PH3134-10M Radar Pulsed Power Transistor M/A-COM Products 10W, 3.1-3.4 GHz, 100s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
ph3134-20l.pdf
PH3134-20L Radar Pulsed Power Transistor M/A-COM Products 20W, 3.1-3.4 GHz, 300s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
