PH3134-55L PDF and Equivalents Search

 

PH3134-55L Specs and Replacement


   Type Designator: PH3134-55L
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 350 W
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 6.5 A
   Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics


   Transition Frequency (ft): 3400 MHz
   Forward Current Transfer Ratio (hFE), MIN: 7.5
   Noise Figure, dB: -
   Package: CERAMIC
 

 PH3134-55L Substitution

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PH3134-55L datasheet

 ..1. Size:95K  macom
 ph3134-55l.pdf pdf_icon

PH3134-55L

PH3134-55L Radar Pulsed Power Transistor M/A-COM Products 55W, 3.1-3.4 GHz, 300 s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern... See More ⇒

 7.1. Size:94K  macom
 ph3134-30s.pdf pdf_icon

PH3134-55L

PH3134-30S Radar Pulsed Power Transistor M/A-COM Products 30W, 3.1-3.4 GHz, 1 s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal... See More ⇒

 7.2. Size:95K  macom
 ph3134-65m.pdf pdf_icon

PH3134-55L

PH3134-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 3.1-3.4 GHz, 100 s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern... See More ⇒

 7.3. Size:102K  macom
 ph3134-25m.pdf pdf_icon

PH3134-55L

PH3134-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 3.1-3.4 GHz, 100 s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern... See More ⇒

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Detailed specifications: PH2731-5M , PH2731-75L , PH2856-160 , PH2931-20M , PH3134-10M , PH3134-20L , PH3134-25M , PH3134-30S , TIP122 , PH3134-65M , PH3135-20M , PH3135-25S , PH3135-5M , PH3135-65M , PH3135-90S , PHPT60406NY , PHPT60406PY .

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