PH3134-55L
Datasheet, Equivalent, Cross Reference Search
Type Designator: PH3134-55L
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 350
W
Maximum Collector-Emitter Voltage |Vce|: 65
V
Maximum Emitter-Base Voltage |Veb|: 3
V
Maximum Collector Current |Ic max|: 6.5
A
Max. Operating Junction Temperature (Tj): 200
°C
Transition Frequency (ft): 3400
MHz
Forward Current Transfer Ratio (hFE), MIN: 7.5
Noise Figure, dB: -
Package: CERAMIC
PH3134-55L
Transistor Equivalent Substitute - Cross-Reference Search
PH3134-55L
Datasheet (PDF)
..1. Size:95K macom
ph3134-55l.pdf 
PH3134-55L Radar Pulsed Power Transistor M/A-COM Products 55W, 3.1-3.4 GHz, 300s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
7.1. Size:94K macom
ph3134-30s.pdf
PH3134-30S Radar Pulsed Power Transistor M/A-COM Products 30W, 3.1-3.4 GHz, 1s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal
7.2. Size:95K macom
ph3134-65m.pdf
PH3134-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 3.1-3.4 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
7.3. Size:102K macom
ph3134-25m.pdf
PH3134-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 3.1-3.4 GHz, 100s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
7.4. Size:99K macom
ph3134-10m.pdf
PH3134-10M Radar Pulsed Power Transistor M/A-COM Products 10W, 3.1-3.4 GHz, 100s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
7.5. Size:102K macom
ph3134-20l.pdf
PH3134-20L Radar Pulsed Power Transistor M/A-COM Products 20W, 3.1-3.4 GHz, 300s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
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