Справочник транзисторов. 2N3762L

 

Биполярный транзистор 2N3762L - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N3762L
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 200 °C
   Ёмкость коллекторного перехода (Cc): 25 pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO5

 Аналоги (замена) для 2N3762L

 

 

2N3762L Datasheet (PDF)

 ..1. Size:54K  microsemi
2n3762l.pdf

2N3762L
2N3762L

TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices Qualified Level JAN 2N3762 2N3763 2N3764 2N3765 JANTX 2N3762L 2N3763L JANTXV MAXIMUM RATINGS 2N3762* 2N3763* Ratings Symbol Unit 2N3764 2N3765 Collector-Emitter Voltage 40 60 Vdc VCEO Collector-Base Voltage 40 60 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 5.0 Vdc VE

 8.1. Size:70K  microsemi
2n3762 2n3763 2n3764 2n3765.pdf

2N3762L
2N3762L

TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices Qualified Level JAN 2N3762 2N3763 2N3764 2N3765 JANTX 2N3762L 2N3763L JANTXV MAXIMUM RATINGS 2N3762* 2N3763* Ratings Symbol Unit 2N3764 2N3765 Collector-Emitter Voltage 40 60 Vdc VCEO Collector-Base Voltage 40 60 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 5.0 Vdc VE

 9.1. Size:262K  rca
2n376.pdf

2N3762L

 9.2. Size:785K  no
2n3768.pdf

2N3762L
2N3762L

The documentation and process conversion measures necessary to comply with this document shall be INCH-POUND completed by 18 February 2014. MIL-PRF-19500/622D 18 December 2013 SUPERSEDING MIL-PRF-19500/622C 25 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS This specification

 9.3. Size:10K  semelab
2n3766smd.pdf

2N3762L

2N3766SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 4A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

 9.4. Size:17K  semelab
2n3767smd05.pdf

2N3762L
2N3762L

2N3767SMD05MECHANICAL DATADimensions in mm (inches)7.54 (0.296)NPN BIPOLAR TRANSISTOR 0.76 (0.030)min.IN A CERAMIC SURFACE MOUNT3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005)PACKAGE FORHIGH REL APPLICATIONS1 32FEATURES HIGH VOLTAGE 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020) FAST SWITCHING0.50 (0.020)max.7.26 (0.286) CER

 9.5. Size:20K  semelab
2n3767smd.pdf

2N3762L
2N3762L

2N3767SMDMECHANICAL DATADimensions in mm (inches) NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS FEATURES HIGH VOLTAGE FAST SWITCHING CERAMIC SURFACE

 9.6. Size:10K  semelab
2n3766smd05.pdf

2N3762L

2N3766SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 4A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm

 9.7. Size:54K  microsemi
2n3763l.pdf

2N3762L
2N3762L

TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices Qualified Level JAN 2N3762 2N3763 2N3764 2N3765 JANTX 2N3762L 2N3763L JANTXV MAXIMUM RATINGS 2N3762* 2N3763* Ratings Symbol Unit 2N3764 2N3765 Collector-Emitter Voltage 40 60 Vdc VCEO Collector-Base Voltage 40 60 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 5.0 Vdc VE

 9.8. Size:207K  aeroflex
2n3766 2n3767.pdf

2N3762L
2N3762L

NPN Power Silicon Transistor2N3766 & 2N3767Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/518 TO-66 (TO-213AA) PackageMaximum RatingsRatings Symbol 2N3766 2N3767 UnitsCollector - Emitter Voltage VCEO 60 80 VdcCollector - Base Voltage VCBO 80 100 VdcEmitter - Base Voltage VEBO 6.0 VdcBase Current IB 2.0 AdcCollector Current IC 4.0 AdcTotal Power Di

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