Биполярный транзистор 2N3762L - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N3762L
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 200 °C
Ёмкость коллекторного перехода (Cc): 25 pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO5
2N3762L Datasheet (PDF)
2n3762l.pdf
TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices Qualified Level JAN 2N3762 2N3763 2N3764 2N3765 JANTX 2N3762L 2N3763L JANTXV MAXIMUM RATINGS 2N3762* 2N3763* Ratings Symbol Unit 2N3764 2N3765 Collector-Emitter Voltage 40 60 Vdc VCEO Collector-Base Voltage 40 60 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 5.0 Vdc VE
2n3762 2n3763 2n3764 2n3765.pdf
TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices Qualified Level JAN 2N3762 2N3763 2N3764 2N3765 JANTX 2N3762L 2N3763L JANTXV MAXIMUM RATINGS 2N3762* 2N3763* Ratings Symbol Unit 2N3764 2N3765 Collector-Emitter Voltage 40 60 Vdc VCEO Collector-Base Voltage 40 60 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 5.0 Vdc VE
2n3768.pdf
The documentation and process conversion measures necessary to comply with this document shall be INCH-POUND completed by 18 February 2014. MIL-PRF-19500/622D 18 December 2013 SUPERSEDING MIL-PRF-19500/622C 25 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS This specification
2n3766smd.pdf
2N3766SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 4A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
2n3767smd05.pdf
2N3767SMD05MECHANICAL DATADimensions in mm (inches)7.54 (0.296)NPN BIPOLAR TRANSISTOR 0.76 (0.030)min.IN A CERAMIC SURFACE MOUNT3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005)PACKAGE FORHIGH REL APPLICATIONS1 32FEATURES HIGH VOLTAGE 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020) FAST SWITCHING0.50 (0.020)max.7.26 (0.286) CER
2n3767smd.pdf
2N3767SMDMECHANICAL DATADimensions in mm (inches) NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS FEATURES HIGH VOLTAGE FAST SWITCHING CERAMIC SURFACE
2n3766smd05.pdf
2N3766SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 4A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm
2n3763l.pdf
TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices Qualified Level JAN 2N3762 2N3763 2N3764 2N3765 JANTX 2N3762L 2N3763L JANTXV MAXIMUM RATINGS 2N3762* 2N3763* Ratings Symbol Unit 2N3764 2N3765 Collector-Emitter Voltage 40 60 Vdc VCEO Collector-Base Voltage 40 60 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 5.0 Vdc VE
2n3766 2n3767.pdf
NPN Power Silicon Transistor2N3766 & 2N3767Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/518 TO-66 (TO-213AA) PackageMaximum RatingsRatings Symbol 2N3766 2N3767 UnitsCollector - Emitter Voltage VCEO 60 80 VdcCollector - Base Voltage VCBO 80 100 VdcEmitter - Base Voltage VEBO 6.0 VdcBase Current IB 2.0 AdcCollector Current IC 4.0 AdcTotal Power Di
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