2N5780 datasheet, аналоги, основные параметры
Наименование производителя: 2N5780 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 0.25 A
Предельная температура PN-перехода (Tj): 100 °C
Электрические характеристики
Ёмкость коллекторного перехода (Cc): 7.6 pf
Статический коэффициент передачи тока (hFE): 2000
Корпус транзистора: TO92
Аналоги (замена) для 2N5780
- подборⓘ биполярного транзистора по параметрам
2N5780 даташит
9.2. Size:89K central
2n5783 2n5786.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
9.3. Size:149K semelab
2n5786l.pdf 
SILICON NPN TRANSISTOR 2N5786L Low Saturation Voltage. High Gain At High Current. Hermetic TO5 (TO-205AA) Metal Package. Ideally suited for General Purpose Amplifier Applications. High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 45V VCER RBE = 100 Collect
9.4. Size:10K semelab
2n5784smd.pdf 
2N5784SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 3.5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26
9.5. Size:10K semelab
2n5785smd.pdf 
2N5785SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 65V IC = 3.5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26
9.6. Size:11K semelab
2n5781.pdf 
2N5781 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 3.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1
9.7. Size:11K semelab
2n5785.pdf 
2N5785 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 65V dia. IC = 3.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1
9.8. Size:10K semelab
2n5782l.pdf 
2N5782L Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) Bipolar PNP Device in a 7.75 (0.305) 8.51 (0.335) Hermetically sealed TO5 Metal Package. 6.10 (0.240) 6.60 (0.260) 0.89 (0.035)max. 38.00 Bipolar PNP Device. (1.5) 0.41 (0.016) min. 0.53 (0.021) dia. VCEO = 65V 5.08 (0.200) IC = 3.5A typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can
9.9. Size:10K semelab
2n5781xl.pdf 
2N5781XL Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) Bipolar PNP Device in a 7.75 (0.305) 8.51 (0.335) Hermetically sealed TO5 Metal Package. 6.10 (0.240) 6.60 (0.260) 0.89 (0.035)max. 38.00 Bipolar PNP Device. (1.5) 0.41 (0.016) min. 0.53 (0.021) dia. VCEO = 80V 5.08 (0.200) IC = 3.5A typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 ca
9.10. Size:18K semelab
2n5784.pdf 
2N5784 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) SILICON EPITAXIAL 8.51 (0.335) NPN TRANSISTOR 4.19 (0.165) 4.95 (0.195) 0.89 max. FEATURES (0.035) 12.70 (0.500) 7.75 (0.305) min. General purpose power transistor for 8.51 (0.335) dia. switching and linear applications in a hermetic TO 39 package. 5.08 (0.200) typ. 2.54 2 (0.100)
9.11. Size:10K semelab
2n5785smd05.pdf 
2N5785SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 65V IC = 3.5A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab he
9.12. Size:340K semelab
2n5785n1.pdf 
NPN SILICON SWITCHING TRANSISTOR 2N5785N1 Hermetic SMD0.5 Metal package. Ideally Suited for Linear Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 65V VCEO Collector Emitter Voltage 50V VEBO Emitter Base Voltage 5V IC Continuous Collecto
9.13. Size:10K semelab
2n5784smd05.pdf 
2N5784SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 3.5A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab he
Другие транзисторы: 2N5667S, 2N5681SMD05, 2N5682X, 2N5684G, 2N5686G, 2N5777, 2N5778, 2N5779, 2SB817, 2N5781XL, 2N5782L, 2N5784SMD, 2N5784SMD05, 2N5785N1, 2N5785SMD, 2N5785SMD05, 2N5786L
