2N5780 Datasheet. Specs and Replacement

Type Designator: 2N5780  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.25 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Collector Capacitance (Cc): 7.6 pF

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO92

 2N5780 Substitution

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2N5780 datasheet

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2n5780 2n5780 2n5777.pdf pdf_icon

2N5780

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2N5780

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒

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2n5786l.pdf pdf_icon

2N5780

SILICON NPN TRANSISTOR 2N5786L Low Saturation Voltage. High Gain At High Current. Hermetic TO5 (TO-205AA) Metal Package. Ideally suited for General Purpose Amplifier Applications. High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 45V VCER RBE = 100 Collect... See More ⇒

Detailed specifications: 2N5667S, 2N5681SMD05, 2N5682X, 2N5684G, 2N5686G, 2N5777, 2N5778, 2N5779, 2SB817, 2N5781XL, 2N5782L, 2N5784SMD, 2N5784SMD05, 2N5785N1, 2N5785SMD, 2N5785SMD05, 2N5786L

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