2N5780 Datasheet and Replacement

   Type Designator: 2N5780
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.25 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Collector Capacitance (Cc): 7.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO92

2N5780 Substitution

- BJT ⓘ Cross-Reference Search

2N5780 Datasheet (PDF)

..1. Size:57K njs
2n5780 2n5780 2n5777.pdf pdf_icon

9.1. Size:317K rca
2n373 2n374 2n456 2n457 2n497 2n544 2n561 2n578 2n579 2n580.pdf pdf_icon

9.2. Size:89K central
2n5783 2n5786.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

9.3. Size:149K semelab
2n5786l.pdf pdf_icon

SILICON NPN TRANSISTOR 2N5786L Low Saturation Voltage. High Gain At High Current. Hermetic TO5 (TO-205AA) Metal Package. Ideally suited for General Purpose Amplifier Applications. High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 45V VCER RBE = 100 Collect

9.4. Size:10K semelab
2n5784smd.pdf pdf_icon

2N5784SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 3.5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26

9.5. Size:10K semelab
2n5785smd.pdf pdf_icon

2N5785SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 65V IC = 3.5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26

9.6. Size:11K semelab
2n5781.pdf pdf_icon

2N5781Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 3.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

9.7. Size:11K semelab
2n5785.pdf pdf_icon

2N5785Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 65V dia.IC = 3.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

9.8. Size:10K semelab
2n5782l.pdf pdf_icon

2N5782LDimensions in mm (inches). 8.51 (0.34)9.40 (0.37)Bipolar PNP Device in a 7.75 (0.305)8.51 (0.335)Hermetically sealed TO5 Metal Package. 6.10 (0.240)6.60 (0.260)0.89 (0.035)max.38.00 Bipolar PNP Device. (1.5)0.41 (0.016)min.0.53 (0.021)dia.VCEO = 65V 5.08 (0.200)IC = 3.5A typ.2.54All Semelab hermetically sealed products 2(0.100)1 3 can

9.9. Size:10K semelab
2n5781xl.pdf pdf_icon

2N5781XLDimensions in mm (inches). 8.51 (0.34)9.40 (0.37)Bipolar PNP Device in a 7.75 (0.305)8.51 (0.335)Hermetically sealed TO5 Metal Package. 6.10 (0.240)6.60 (0.260)0.89 (0.035)max.38.00 Bipolar PNP Device. (1.5)0.41 (0.016)min.0.53 (0.021)dia.VCEO = 80V 5.08 (0.200)IC = 3.5A typ.2.54All Semelab hermetically sealed products 2(0.100)1 3 ca

9.10. Size:18K semelab
2n5784.pdf pdf_icon

2N5784MECHANICAL DATADimensions in mm (inches)8.89 (0.35)9.40 (0.37)7.75 (0.305)SILICON EPITAXIAL8.51 (0.335)NPN TRANSISTOR4.19 (0.165)4.95 (0.195)0.89max.FEATURES(0.035)12.70(0.500)7.75 (0.305)min.General purpose power transistor for8.51 (0.335)dia.switching and linear applications in ahermetic TO39 package.5.08 (0.200)typ.2.542(0.100)

9.11. Size:10K semelab
2n5785smd05.pdf pdf_icon

2N5785SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 65V IC = 3.5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab he

9.12. Size:340K semelab
2n5785n1.pdf pdf_icon

NPN SILICON SWITCHING TRANSISTOR 2N5785N1 Hermetic SMD0.5 Metal package. Ideally Suited for Linear Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 65V VCEO Collector Emitter Voltage 50V VEBO Emitter Base Voltage 5V IC Continuous Collecto

9.13. Size:10K semelab
2n5784smd05.pdf pdf_icon

2N5784SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 3.5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab he

Datasheet: 2N5667S , 2N5681SMD05 , 2N5682X , 2N5684G , 2N5686G , 2N5777 , 2N5778 , 2N5779 , 2N4401 , 2N5781XL , 2N5782L , 2N5784SMD , 2N5784SMD05 , 2N5785N1 , 2N5785SMD , 2N5785SMD05 , 2N5786L .

Keywords - 2N5780 transistor datasheet

2N5780 cross reference
2N5780 equivalent finder
2N5780 lookup
2N5780 substitution
2N5780 replacement

LIST

Last Update

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

All Transistors. 2N5780 Datasheet

2N5780 Datasheet and Replacement

2N5780 Datasheet (PDF)

Keywords - 2N5780 transistor datasheet

LIST

Last Update

Popular searches

AllTransistors(C)