Биполярный транзистор 2N6036G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N6036G
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 25 MHz
Ёмкость коллекторного перехода (Cc): 200 pf
Статический коэффициент передачи тока (hfe): 750
Корпус транзистора: TO225
2N6036G Datasheet (PDF)
2n6036g.pdf
2N6034G, 2N6035G,2N6036G (PNP),2N6038G, 2N6039G (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower Transistors4.0 AMPERES DARLINGTONPlastic Darlington complementary silicon power transistors aredesigned for general purpose amplifier and low-speed switchingCOMPLEMENTARY SILICONapplications.POWER TRANSISTORSFeatures40, 60, 80 VOLTS, 40 WATTS ESD Ra
2n6035g 2n6035g 2n6036g.pdf
2N6034G, 2N6035G,2N6036G (PNP),2N6038G, 2N6039G (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower Transistors4.0 AMPERES DARLINGTONPlastic Darlington complementary silicon power transistors aredesigned for general purpose amplifier and low-speed switchingCOMPLEMENTARY SILICONapplications.POWER TRANSISTORSFeatures40, 60, 80 VOLTS, 40 WATTS ESD Ra
2n6035 2n6036 2n6038 2n6039.pdf
Order this documentMOTOROLAby 2N6035/DSEMICONDUCTOR TECHNICAL DATA2N6030 thru 2N6031(See 2N5630)Plastic DarlingtonComplementary Silicon PowerPNPTransistors2N6035. . . designed for generalpurpose amplifier and lowspeed switching applications. High DC Current Gain 2N6036*hFE = 2000 (Typ) @ IC = 2.0 AdcNPN CollectorEmitter Sustaining Voltage @
2n6036 2n6039.pdf
2N60362N6039COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS 2N6036 IS A STMicroelectronicsPREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIER 123DESCRIPTION The 2N6036 and 2N6039 are complementarySOT-32silicon power Darlington transistors
2n6034 2n6035 2n6036.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6034 2N6035 2N6036 DESCRIPTION With TO-126 package Complement to type 2N6037/6038/6039 DARLINGTON High DC current gain APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute ma
2n6036.pdf
INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2N6036DESCRIPTIONCollectorEmitter Sustaining Voltage: V =CEO(SUS) -80V(Min.)DC Current Gain: h = 750(Min) @ I = -2AFE CComplement to Type 2N6039Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-sp
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050