2N6036G Datasheet and Replacement
Type Designator: 2N6036G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 25 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO225
2N6036G Substitution
2N6036G Datasheet (PDF)
2n6036g.pdf

2N6034G, 2N6035G,2N6036G (PNP),2N6038G, 2N6039G (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower Transistors4.0 AMPERES DARLINGTONPlastic Darlington complementary silicon power transistors aredesigned for general purpose amplifier and low-speed switchingCOMPLEMENTARY SILICONapplications.POWER TRANSISTORSFeatures40, 60, 80 VOLTS, 40 WATTS ESD Ra
2n6035g 2n6035g 2n6036g.pdf

2N6034G, 2N6035G,2N6036G (PNP),2N6038G, 2N6039G (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower Transistors4.0 AMPERES DARLINGTONPlastic Darlington complementary silicon power transistors aredesigned for general purpose amplifier and low-speed switchingCOMPLEMENTARY SILICONapplications.POWER TRANSISTORSFeatures40, 60, 80 VOLTS, 40 WATTS ESD Ra
2n6035 2n6036 2n6038 2n6039.pdf

Order this documentMOTOROLAby 2N6035/DSEMICONDUCTOR TECHNICAL DATA2N6030 thru 2N6031(See 2N5630)Plastic DarlingtonComplementary Silicon PowerPNPTransistors2N6035. . . designed for generalpurpose amplifier and lowspeed switching applications. High DC Current Gain 2N6036*hFE = 2000 (Typ) @ IC = 2.0 AdcNPN CollectorEmitter Sustaining Voltage @
Datasheet: 2N5794UC , 2N5796U , 2N5883G , 2N5884G , 2N5885G , 2N5886G , 2N6034G , 2N6035G , BC549 , 2N6038G , 2N6039G , 2N6040G , 2N6042G , 2N6043G , 2N6045G , 2N6052G , 2N6107G .
History: FMMT5447
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History: FMMT5447



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