Биполярный транзистор 2SCR573D - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SCR573D
Маркировка: CR573
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 320 MHz
Ёмкость коллекторного перехода (Cc): 20 pf
Статический коэффициент передачи тока (hfe): 180
Корпус транзистора: TO252
2SCR573D Datasheet (PDF)
2scr573d.pdf
2SCR573DDatasheetNPN 3.0A 50V Middle Power TransistorlOutlinelParameter Value CPTVCEO50VIC3A 2SCR573D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR573D.3) Low VCE(sat)VCE(sat)=0.35V(Max.).(IC/IB=1A/50mA)4) Lead Free/Ro
2scr573d.pdf
isc Silicon NPN Power Transistor 2SCR573DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V =0.35V@(I =1A,I =50mA)CE(sat) C BComplementary NPN types:2SAR573D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
2scr573d3.pdf
2SCR573D3DatasheetNPN 3.0A 50V Power TransistorlOutlinel Parameter Value DPAK VCEO50VIC3ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR573D3.3) Low VCE(sat)VCE(sat)=350mV(Max.).(IC/IB=1A/50mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificatio
2scr573da08.pdf
2SCR573D A08DatasheetNPN 3.0A 50V Middle Power TransistorlOutlinelParameter Value CPTVCEO50VIC3A 2SCR573D A08 lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR573D.3) Low VCE(sat)VCE(sat)=0.35V(Max.).(IC/IB=1A/50mA)4) Lead
2scr574da07.pdf
2SCR574D A07DatasheetNPN 2.0A 80V Middle Power TransistorlOutlinelParameter Value CPTVCEO80VIC2A 2SCR574D A07 lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR574D.3) Low VCE(sat)VCE(sat)=0.30V(Max.).(IC/IB=1A/50mA)4) Lead
2scr574d.pdf
2SCR574DDatasheetNPN 2.0A 80V Middle Power TransistorlOutlinelParameter Value CPTVCEO80VIC2A 2SCR574D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR574D.3) Low VCE(sat)VCE(sat)=0.30V(Max.).(IC/IB=1A/50mA)4) Lead Free/Ro
2scr572d3fra.pdf
2SCR572D3 FRADatasheetNPN 5.0A 30V Power TransistorAEC-Q101 QualifiedlOutlinel Parameter Value DPAK VCEO30VIC5ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR572D3 FRA.3) Low VCE(sat)VCE(sat)=400mV(Max.).(IC/IB=2A/100mA)lApplicationlLOW FREQUENCY AMPLI
2scr574d3fra.pdf
2SCR574D3 FRADatasheetNPN 2.0A 80V Power TransistorAEC-Q101 QualifiedlOutlinel Parameter Value DPAK VCEO80VIC2ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR574D3 FRA.3) Low VCE(sat)VCE(sat)=300mV(Max.).(IC/IB=1A/50mA)lApplicationlLOW FREQUENCY AMPLIF
2scr572d.pdf
2SCR572DDatasheetNPN 5.0A 30V Middle Power TransistorlOutlinelParameter Value CPTVCEO30VIC5A 2SCR572D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR572D.3) Low VCE(sat)VCE(sat)=0.40V(Max.).(IC/IB=2A/100mA)4) Lead Free/R
2scr572d3.pdf
2SCR572D3NPN 5.0A 30V Power TransistorDatasheetlOutlinel Parameter Value DPAK VCEO30VIC5ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR572D3.3) Low VCE(sat)VCE(sat)=400mV(Max.).(IC/IB=2A/100mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificati
2scr574d.pdf
isc Silicon NPN Power Transistor 2SCR574DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V =0.3V(max)@(I =1A,I =50mA)CE(sat) C BComplementary NPN types:2SAR574D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
2scr572d.pdf
isc Silicon NPN Power Transistor 2SCR572DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V =0.4V@(I =2A,I =0.1A)CE(sat) C BComplementary NPN types:2SAR572D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: HJ10387
