All Transistors. 2SCR573D Datasheet

 

2SCR573D Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SCR573D
   SMD Transistor Code: CR573
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 320 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: TO252

 2SCR573D Transistor Equivalent Substitute - Cross-Reference Search

   

2SCR573D Datasheet (PDF)

 ..1. Size:792K  rohm
2scr573d.pdf

2SCR573D
2SCR573D

2SCR573DDatasheetNPN 3.0A 50V Middle Power TransistorlOutlinelParameter Value CPTVCEO50VIC3A 2SCR573D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR573D.3) Low VCE(sat)VCE(sat)=0.35V(Max.).(IC/IB=1A/50mA)4) Lead Free/Ro

 ..2. Size:213K  inchange semiconductor
2scr573d.pdf

2SCR573D
2SCR573D

isc Silicon NPN Power Transistor 2SCR573DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V =0.35V@(I =1A,I =50mA)CE(sat) C BComplementary NPN types:2SAR573D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

 0.1. Size:1681K  rohm
2scr573d3.pdf

2SCR573D
2SCR573D

2SCR573D3DatasheetNPN 3.0A 50V Power TransistorlOutlinel Parameter Value DPAK VCEO50VIC3ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR573D3.3) Low VCE(sat)VCE(sat)=350mV(Max.).(IC/IB=1A/50mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificatio

 0.2. Size:796K  rohm
2scr573da08.pdf

2SCR573D
2SCR573D

2SCR573D A08DatasheetNPN 3.0A 50V Middle Power TransistorlOutlinelParameter Value CPTVCEO50VIC3A 2SCR573D A08 lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR573D.3) Low VCE(sat)VCE(sat)=0.35V(Max.).(IC/IB=1A/50mA)4) Lead

 8.1. Size:791K  rohm
2scr574da07.pdf

2SCR573D
2SCR573D

2SCR574D A07DatasheetNPN 2.0A 80V Middle Power TransistorlOutlinelParameter Value CPTVCEO80VIC2A 2SCR574D A07 lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR574D.3) Low VCE(sat)VCE(sat)=0.30V(Max.).(IC/IB=1A/50mA)4) Lead

 8.2. Size:789K  rohm
2scr574d.pdf

2SCR573D
2SCR573D

2SCR574DDatasheetNPN 2.0A 80V Middle Power TransistorlOutlinelParameter Value CPTVCEO80VIC2A 2SCR574D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR574D.3) Low VCE(sat)VCE(sat)=0.30V(Max.).(IC/IB=1A/50mA)4) Lead Free/Ro

 8.3. Size:1019K  rohm
2scr572d3fra.pdf

2SCR573D
2SCR573D

2SCR572D3 FRADatasheetNPN 5.0A 30V Power TransistorAEC-Q101 QualifiedlOutlinel Parameter Value DPAK VCEO30VIC5ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR572D3 FRA.3) Low VCE(sat)VCE(sat)=400mV(Max.).(IC/IB=2A/100mA)lApplicationlLOW FREQUENCY AMPLI

 8.4. Size:1014K  rohm
2scr574d3fra.pdf

2SCR573D
2SCR573D

2SCR574D3 FRADatasheetNPN 2.0A 80V Power TransistorAEC-Q101 QualifiedlOutlinel Parameter Value DPAK VCEO80VIC2ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR574D3 FRA.3) Low VCE(sat)VCE(sat)=300mV(Max.).(IC/IB=1A/50mA)lApplicationlLOW FREQUENCY AMPLIF

 8.5. Size:787K  rohm
2scr572d.pdf

2SCR573D
2SCR573D

2SCR572DDatasheetNPN 5.0A 30V Middle Power TransistorlOutlinelParameter Value CPTVCEO30VIC5A 2SCR572D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR572D.3) Low VCE(sat)VCE(sat)=0.40V(Max.).(IC/IB=2A/100mA)4) Lead Free/R

 8.6. Size:1654K  rohm
2scr572d3.pdf

2SCR573D
2SCR573D

2SCR572D3NPN 5.0A 30V Power TransistorDatasheetlOutlinel Parameter Value DPAK VCEO30VIC5ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR572D3.3) Low VCE(sat)VCE(sat)=400mV(Max.).(IC/IB=2A/100mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificati

 8.7. Size:213K  inchange semiconductor
2scr574d.pdf

2SCR573D
2SCR573D

isc Silicon NPN Power Transistor 2SCR574DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V =0.3V(max)@(I =1A,I =50mA)CE(sat) C BComplementary NPN types:2SAR574D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 8.8. Size:212K  inchange semiconductor
2scr572d.pdf

2SCR573D
2SCR573D

isc Silicon NPN Power Transistor 2SCR572DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V =0.4V@(I =2A,I =0.1A)CE(sat) C BComplementary NPN types:2SAR572D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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