Биполярный транзистор 9012S
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 9012S
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.625
W
Макcимально допустимое напряжение коллектор-база (Ucb): 40
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 150
MHz
Статический коэффициент передачи тока (hfe): 64
Корпус транзистора:
TO92
Аналоги (замена) для 9012S
9012S
Datasheet (PDF)
..1. Size:552K jiangsu
9012s.pdf JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD T TO-92 Plastic-Encapsulate Transistors TO-92 9012S TRANSISTOR (PNP) FEATURES 1. EMITTER Complementary to 9013S 2. COLLECTOR Excellent hFE linearity 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 VCollector-Base Voltage VCEO -25 VCollector-Emitter Voltage V
0.1. Size:353K kec
ktc9012s.pdf SEMICONDUCTOR KTC9012STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_Excellent hFE Linearity.+A 2.93 0.20B 1.30+0.20/-0.15Complementary to KTC9013S.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10QMAXIMUM RATING (Ta=25)
0.2. Size:613K kec
ktc9012sc.pdf SEMICONDUCTOR KTC9012SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESExcellent hFE Linearity.Complementary to KTC9013SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -40 VCollector-Base VoltageVCEO -30 VCollector-Emitter VoltageVEBOEmitter-Base Voltage -5 VICCollector Current -500 mA
0.3. Size:75K lrc
l9012plt1g l9012qlt1g l9012rlt1g l9012slt1g.pdf LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S-L9012PLT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
0.5. Size:75K lrc
l9012plt1g l9012plt3g l9012qlt1g l9012qlt3g l9012rlt1g l9012rlt3g l9012slt1g l9012slt3g.pdf LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S-L9012PLT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
0.6. Size:79K lrc
l9012slt1g.pdf LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9012PLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
0.7. Size:96K first silicon
ftc9012s.pdf SEMICONDUCTORFTC9012STECHNICAL DATAXGeneral Purpose TransistorsPNP SiliconFEATURE3We declare that the material of product compliance with RoHS requirements.2ORDERING INFORMATION1DevicePackageShippingSOT-23FTC9012SX SOT 23 FTC9012SX10000/Tape&ReelSOT-233COLLECTOR1MAXIMUM RATINGS BASERating Symbol Value Unit2Collector-Emitter Voltage VCEO 2
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