9012S Datasheet, Equivalent, Cross Reference Search
Type Designator: 9012S
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 64
Noise Figure, dB: -
Package: TO92
9012S Transistor Equivalent Substitute - Cross-Reference Search
9012S Datasheet (PDF)
9012s.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD T TO-92 Plastic-Encapsulate Transistors TO-92 9012S TRANSISTOR (PNP) FEATURES 1. EMITTER Complementary to 9013S 2. COLLECTOR Excellent hFE linearity 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 VCollector-Base Voltage VCEO -25 VCollector-Emitter Voltage V
ktc9012s.pdf
SEMICONDUCTOR KTC9012STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_Excellent hFE Linearity.+A 2.93 0.20B 1.30+0.20/-0.15Complementary to KTC9013S.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10QMAXIMUM RATING (Ta=25)
ktc9012sc.pdf
SEMICONDUCTOR KTC9012SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESExcellent hFE Linearity.Complementary to KTC9013SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -40 VCollector-Base VoltageVCEO -30 VCollector-Emitter VoltageVEBOEmitter-Base Voltage -5 VICCollector Current -500 mA
l9012plt1g l9012qlt1g l9012rlt1g l9012slt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S-L9012PLT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9012plt1g l9012plt3g l9012qlt1g l9012qlt3g l9012rlt1g l9012rlt3g l9012slt1g l9012slt3g l9012rlt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique SiteS-L9012PLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9012plt1g l9012plt3g l9012qlt1g l9012qlt3g l9012rlt1g l9012rlt3g l9012slt1g l9012slt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S-L9012PLT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9012slt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9012PLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
ftc9012s.pdf
SEMICONDUCTORFTC9012STECHNICAL DATAXGeneral Purpose TransistorsPNP SiliconFEATURE3We declare that the material of product compliance with RoHS requirements.2ORDERING INFORMATION1DevicePackageShippingSOT-23FTC9012SX SOT 23 FTC9012SX10000/Tape&ReelSOT-233COLLECTOR1MAXIMUM RATINGS BASERating Symbol Value Unit2Collector-Emitter Voltage VCEO 2
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
