BC857BDW1T1G. Аналоги и основные параметры

Наименование производителя: BC857BDW1T1G

Маркировка: 3F

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.38 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Ёмкость коллекторного перехода (Cc): 4.5 pf

Статический коэффициент передачи тока (hFE): 220

Корпус транзистора: SOT363

 Аналоги (замена) для BC857BDW1T1G

- подборⓘ биполярного транзистора по параметрам

 

BC857BDW1T1G даташит

 ..1. Size:82K  onsemi
bc856bdw1t1g bc857bdw1t1g bc857cdw1t1g bc858cdw1t1g.pdfpdf_icon

BC857BDW1T1G

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series www.onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 These transistors are designed for general purpose amplifier CASE 419B STYLE 1 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (3) (2) (1) Features S

 ..2. Size:156K  onsemi
bc856bdw1t1g sbc856bdw1t1g bc857bdw1t1g sbc857bdw1t1g bc857cdw1t1g sbc857cdw1t1g bc858cdw1t1g.pdfpdf_icon

BC857BDW1T1G

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series www.onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 These transistors are designed for general purpose amplifier CASE 419B STYLE 1 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (3) (2) (1) Features S

 ..3. Size:181K  onsemi
bc856bdw1t3g bc857bdw1t1g.pdfpdf_icon

BC857BDW1T1G

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices http //onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applicat

 ..4. Size:172K  onsemi
bc856bdw1t1g bc857bdw1t1g bc858cdw1t1g.pdfpdf_icon

BC857BDW1T1G

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors http //onsemi.com PNP Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Q1 Q2 Features These Devices are Pb-Free, Halogen Free/BFR Fr

Другие транзисторы: BC856C, BC856LT1, BC856T, BC857ALT1G, BC857AM, BC857AMB, BC857AW-G, BC857AWR, S8050, BC857BFA, BC857BFZ, BC857BL3, BC857BLT1G, BC857BLT3G, BC857BM, BC857BMB, BC857BTT1G