All Transistors. BC857BDW1T1G Datasheet

 

BC857BDW1T1G Datasheet and Replacement


   Type Designator: BC857BDW1T1G
   SMD Transistor Code: 3F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.38 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 220
   Noise Figure, dB: -
   Package: SOT363
 

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BC857BDW1T1G Datasheet (PDF)

 ..1. Size:82K  onsemi
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BC857BDW1T1G

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

 ..2. Size:156K  onsemi
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BC857BDW1T1G

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

 ..3. Size:181K  onsemi
bc856bdw1t3g bc857bdw1t1g.pdf pdf_icon

BC857BDW1T1G

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

 ..4. Size:172K  onsemi
bc856bdw1t1g bc857bdw1t1g bc858cdw1t1g.pdf pdf_icon

BC857BDW1T1G

BC856BDW1T1G,BC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred DevicesDual General PurposeTransistorshttp://onsemi.comPNP Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.Q1 Q2Features These Devices are Pb-Free, Halogen Free/BFR Fr

Datasheet: BC856C , BC856LT1 , BC856T , BC857ALT1G , BC857AM , BC857AMB , BC857AW-G , BC857AWR , BD140 , BC857BFA , BC857BFZ , BC857BL3 , BC857BLT1G , BC857BLT3G , BC857BM , BC857BMB , BC857BTT1G .

History: DRA3114Y

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