BC857BTT1G. Аналоги и основные параметры

Наименование производителя: BC857BTT1G

Маркировка: 3F

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.2 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Ёмкость коллекторного перехода (Cc): 4.5 pf

Статический коэффициент передачи тока (hFE): 220

Корпус транзистора: SOT416

 Аналоги (замена) для BC857BTT1G

- подборⓘ биполярного транзистора по параметрам

 

BC857BTT1G даташит

 ..1. Size:64K  onsemi
bc857btt1g.pdfpdf_icon

BC857BTT1G

BC857BTT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 Qualifi

 0.1. Size:67K  onsemi
nsvbc857btt1g.pdfpdf_icon

BC857BTT1G

BC857BTT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 Qualifi

 0.2. Size:135K  lrc
lbc857att1g lbc857btt1g lbc857ctt1g.pdfpdf_icon

BC857BTT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857ATT1G PNP Silicon Series These transistors are designed for general purpose amplifier S-LBC857ATT1G applications. They are housed in the SC-89 package which is designed Series for low power surface mount applications. Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

 0.3. Size:134K  lrc
lbc857btt1g.pdfpdf_icon

BC857BTT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857ATT1G PNP Silicon Series These transistors are designed for general purpose amplifier S-LBC857ATT1G applications. They are housed in the SC-89 package which is designed Series for low power surface mount applications. Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

Другие транзисторы: BC857BDW1T1G, BC857BFA, BC857BFZ, BC857BL3, BC857BLT1G, BC857BLT3G, BC857BM, BC857BMB, BC557, BC857BW-G, BC857BWR, BC857BWT1G, BC857CDW1T1G, BC857CLT1G, BC857CLT3G, BC857CM, BC857CMB