All Transistors. BC857BTT1G Datasheet

 

BC857BTT1G Datasheet and Replacement


   Type Designator: BC857BTT1G
   SMD Transistor Code: 3F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 220
   Noise Figure, dB: -
   Package: SOT416
 

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BC857BTT1G Datasheet (PDF)

 ..1. Size:64K  onsemi
 bc857btt1g.pdf pdf_icon

BC857BTT1G

BC857BTT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 which isdesigned for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q101Qualifi

 0.1. Size:67K  onsemi
 nsvbc857btt1g.pdf pdf_icon

BC857BTT1G

BC857BTT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 which isdesigned for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q101Qualifi

 0.2. Size:135K  lrc
 lbc857att1g lbc857btt1g lbc857ctt1g.pdf pdf_icon

BC857BTT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857ATT1GPNP Silicon SeriesThese transistors are designed for general purpose amplifierS-LBC857ATT1Gapplications. They are housed in the SC-89 package which is designed Seriesfor low power surface mount applications.Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

 0.3. Size:134K  lrc
 lbc857btt1g.pdf pdf_icon

BC857BTT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857ATT1GPNP Silicon SeriesThese transistors are designed for general purpose amplifierS-LBC857ATT1Gapplications. They are housed in the SC-89 package which is designed Seriesfor low power surface mount applications.Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

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Datasheet: BC857BDW1T1G , BC857BFA , BC857BFZ , BC857BL3 , BC857BLT1G , BC857BLT3G , BC857BM , BC857BMB , TIP122 , BC857BW-G , BC857BWR , BC857BWT1G , BC857CDW1T1G , BC857CLT1G , BC857CLT3G , BC857CM , BC857CMB .

History: KRA740E | UN5113 | MMBTSC2712-G | UN5112 | DT6105 | CTLM3410-M832D | HN3C56FU

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