BC857BTT1G pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BC857BTT1G Specs and Replacement

Type Designator: BC857BTT1G

SMD Transistor Code: 3F

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 220

Noise Figure, dB: -

Package: SOT416

BC857BTT1G Substitution

- BJT ⓘ Cross-Reference Search

BC857BTT1G datasheet

..1. Size:64K onsemi

bc857btt1g.pdf pdf_icon

BC857BTT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 Qualifi... See More ⇒

0.1. Size:67K onsemi

nsvbc857btt1g.pdf pdf_icon

0.2. Size:135K lrc

lbc857att1g lbc857btt1g lbc857ctt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857ATT1G PNP Silicon Series These transistors are designed for general purpose amplifier S-LBC857ATT1G applications. They are housed in the SC-89 package which is designed Series for low power surface mount applications. Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri... See More ⇒

0.3. Size:134K lrc

lbc857btt1g.pdf pdf_icon