Биполярный транзистор BCP56T1G Даташит. Аналоги
Наименование производителя: BCP56T1G
Маркировка: BH
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 130 MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: SOT223
Аналог (замена) для BCP56T1G
BCP56T1G Datasheet (PDF)
bcp56t1g bcp56-10t1g bcp56-16t1g.pdf

BCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be solder
bcp56t1g.pdf

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The
sbcp56t1g.pdf

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The
bcp56t1r.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP56T1/DBCP56T1NPN SiliconSERIESEpitaxial TransistorMotorola Preferred DeviceThese NPN Silicon Epitaxial transistors are designed for use in audio amplifierapplications. The device is housed in the SOT-223 package, which is designed forMEDIUM POWERmedium power surface mount applications.NPN SILICON High Cu
Другие транзисторы... BCP53-16T1G , BCP53-16T3G , BCP53T1G , BCP56-10T1G , BCP56-10T3G , BCP5616Q , BCP56-16T1G , BCP56-16T3G , 2SD669 , BCP56T3G , BCP68T1G , BCP69T1G , BCW30LT1G , BCW32LT1G , BCW33LT1G , BCW33LT3G , BCW35X .
History: DMG5640M
History: DMG5640M



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