BCP56T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: BCP56T1G
SMD Transistor Code: BH
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT223
BCP56T1G Transistor Equivalent Substitute - Cross-Reference Search
BCP56T1G Datasheet (PDF)
bcp56t1g bcp56-10t1g bcp56-16t1g.pdf
BCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be solder
bcp56t1g.pdf
BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The
sbcp56t1g.pdf
BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The
bcp56t1r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP56T1/DBCP56T1NPN SiliconSERIESEpitaxial TransistorMotorola Preferred DeviceThese NPN Silicon Epitaxial transistors are designed for use in audio amplifierapplications. The device is housed in the SOT-223 package, which is designed forMEDIUM POWERmedium power surface mount applications.NPN SILICON High Cu
bcp56t1-d.pdf
BCP56T1 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be sold
bcp56t1 bcp56t3 bcp56-10t1 bcp56-16t1 bcp56-16t1g bcp56-16t3.pdf
BCP56T1 SeriesPreferred DevicesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON Pb-Free Package is AvailableHIGH CURRENT TRANSISTOR Hig
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SA255 | 2SC4082 | 2SB108 | 2SB253 | EMX3FHA
History: 2SA255 | 2SC4082 | 2SB108 | 2SB253 | EMX3FHA
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