Справочник транзисторов. BCP56T3G

 

Биполярный транзистор BCP56T3G Даташит. Аналоги


   Наименование производителя: BCP56T3G
   Маркировка: BH
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 130 MHz
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: SOT223
 

 Аналог (замена) для BCP56T3G

   - подбор ⓘ биполярного транзистора по параметрам

 

BCP56T3G Datasheet (PDF)

 ..1. Size:151K  onsemi
bcp56-10t1g bcp56t3g.pdfpdf_icon

BCP56T3G

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The

 0.1. Size:151K  onsemi
sbcp56t3g.pdfpdf_icon

BCP56T3G

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The

 7.1. Size:81K  onsemi
bcp56t1 bcp56t3 bcp56-10t1 bcp56-16t1 bcp56-16t1g bcp56-16t3.pdfpdf_icon

BCP56T3G

BCP56T1 SeriesPreferred DevicesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON Pb-Free Package is AvailableHIGH CURRENT TRANSISTOR Hig

 8.1. Size:200K  motorola
bcp56t1r.pdfpdf_icon

BCP56T3G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP56T1/DBCP56T1NPN SiliconSERIESEpitaxial TransistorMotorola Preferred DeviceThese NPN Silicon Epitaxial transistors are designed for use in audio amplifierapplications. The device is housed in the SOT-223 package, which is designed forMEDIUM POWERmedium power surface mount applications.NPN SILICON High Cu

Другие транзисторы... BCP53-16T3G , BCP53T1G , BCP56-10T1G , BCP56-10T3G , BCP5616Q , BCP56-16T1G , BCP56-16T3G , BCP56T1G , 2222A , BCP68T1G , BCP69T1G , BCW30LT1G , BCW32LT1G , BCW33LT1G , BCW33LT3G , BCW35X , BCW65ALT1G .

History: MPS5551 | MMBC1623L4

 

 
Back to Top

 


 
.