BCP56T3G datasheet, аналоги, основные параметры

Наименование производителя: BCP56T3G  📄📄 

Маркировка: BH

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 1.5 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 130 MHz

Статический коэффициент передачи тока (hFE): 40

Корпус транзистора: SOT223

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BCP56T3G даташит

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BCP56 Series, SBCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 http //onsemi.com package, which is designed for medium power surface mount applications. MEDIUM POWER NPN SILICON Features HIGH CURRENT TRANSISTOR High Current 1.0 A SURFACE MOUNT The

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BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount http //onsemi.com applications. Features MEDIUM POWER NPN SILICON Pb-Free Package is Available HIGH CURRENT TRANSISTOR Hig

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCP56T1/D BCP56T1 NPN Silicon SERIES Epitaxial Transistor Motorola Preferred Device These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for MEDIUM POWER medium power surface mount applications. NPN SILICON High Cu

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