Справочник транзисторов. BCW65CLT1G

 

Биполярный транзистор BCW65CLT1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BCW65CLT1G
   Маркировка: ECM
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 32 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 12 pf
   Статический коэффициент передачи тока (hfe): 250
   Корпус транзистора: SOT23

 Аналоги (замена) для BCW65CLT1G

 

 

BCW65CLT1G Datasheet (PDF)

 ..1. Size:102K  onsemi
bcw65clt1g.pdf

BCW65CLT1G
BCW65CLT1G

BCW65ALT1G,BCW65CLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTOR3Compliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 60 Vdc3Emitter - Base Voltage VEBO 5.0 Vdc1Collector Current - Cont

 ..2. Size:73K  onsemi
bcw65alt1g bcw65clt1g.pdf

BCW65CLT1G
BCW65CLT1G

BCW65ALT1G,BCW65CLT1GGeneral Purpose TransistorNPN Siliconwww.onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTOR3Compliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 60 Vdc 3Emitter - Base Voltage VEBO 5.0 Vdc1Collector Current - Continuo

 9.1. Size:84K  motorola
bcw65alt.pdf

BCW65CLT1G
BCW65CLT1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW65ALT1/DGeneral Purpose TransistorBCW65ALT1NPN SiliconCOLLECTOR313BASE122EMITTERMAXIMUM RATINGSCASE 31808, STYLE 6Rating Symbol Value Unit SOT23 (TO236AB)CollectorEmitter Voltage VCEO 32 VdcCollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current

 9.2. Size:134K  siemens
bcw65 bcw66.pdf

BCW65CLT1G
BCW65CLT1G

NPN Silicon AF Transistors BCW 65BCW 66 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 67, BCW 68 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCW 65 A EAs Q62702-C1516 B E C SOT-23BCW 65 B EBs Q62702-C1612BCW 65 C ECs Q62702-C1479BCW 66 F EFs Q62702-C1892BCW 66 G EGs Q627

 9.3. Size:52K  diodes
bcw65 bcw66.pdf

BCW65CLT1G
BCW65CLT1G

SOT23 NPN SILICON PLANARBCW65MEDIUM POWER TRANSISTORSBCW66ISSUE 3 - AUGUST 1995. T I D T I V V EC V T BV T T SOT23 8ABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V V i V I V V V i II I 8 V II I V V I V Di i i T V i T T T V V V V V V V V BCW65BCW66ELECTRICAL CHARACTERISTICS (at Tamb = 25

 9.4. Size:110K  onsemi
bcw65alt1-clt1.pdf

BCW65CLT1G
BCW65CLT1G

BCW65ALT1G,BCW65CLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTOR3Compliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 60 Vdc3Emitter - Base Voltage VEBO 5.0 Vdc1Collector Current - Cont

 9.5. Size:102K  onsemi
bcw65alt1g.pdf

BCW65CLT1G
BCW65CLT1G

BCW65ALT1G,BCW65CLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTOR3Compliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 60 Vdc3Emitter - Base Voltage VEBO 5.0 Vdc1Collector Current - Cont

 9.6. Size:81K  cdil
bcw65a b c.pdf

BCW65CLT1G
BCW65CLT1G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageBCW65A, BCW65BBCW65CGENERAL PURPOSE TRANSISTORNPN transistorMarkingPACKAGE OUTLINE DETAILSBCW65A = EAALL DIMENSIONS IN mmBCW65B = EBBCW65C = ECPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGS BCW65A 65B 65CC

 9.7. Size:296K  willas
bcw65alt1.pdf

BCW65CLT1G
BCW65CLT1G

FM120-M WILLASBC LT1THRUGeneral Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeaturesNPN Silicons design, excellent power dissipation offers Batch proces betFeatruester reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in ord

 9.8. Size:69K  lrc
lbcw65alt1g.pdf

BCW65CLT1G
BCW65CLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBCW65ALT1GFeatruesS-LBCW65ALT1GWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmit

 9.9. Size:847K  kexin
bcw65.pdf

BCW65CLT1G
BCW65CLT1G

SMD Type TransistorsNPN TransistorsBCW65 (KCW65)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 Collector Current Capability IC=800mA Collector Emitter Voltage VCEO=32V General Purpose Transistor 1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Coll

Другие транзисторы... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

 

 
Back to Top