BT2222 NPN PCM TC=25 350 mW ICM 1000 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.01mA 75 V V(BR)CEO ICE=0.01mA 40 V V(BR)EBO IEB=0.01mA 6.0 V ICBO VCB=60V 0.01 A IEBO VEB=3V 0.01 A VBEsat 1.5 IC=150mA V IB=15mA VCEsat 0.3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2222AWT1/DPreliminary InformationMMBT2222AWT1General Purpose TransistorMotorola Preferred DeviceNPN SiliconThese transistors are designed for general purpose amplifier applica-tions. They are housed in the SOT323/SC70 package which isdesigned for low power surface mount applications.COLLECTOR3311

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2222LT1/DMMBT2222LT1General Purpose Transistors*MMBT2222ALT1COLLECTORNPN Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 2222 2222A Unit2CollectorEmitter Voltage VCEO 30 40 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 75 VdcSOT23 (TO23

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2222LT1/DMMBT2222LT1General Purpose Transistors*MMBT2222ALT1COLLECTORNPN Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 2222 2222A Unit2CollectorEmitter Voltage VCEO 30 40 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 75 VdcSOT23 (TO23

PMBT2222; PMBT2222ANPN switching transistorsRev. 6 12 November 2010 Product data sheet1. Product profile1.1 General descriptionNPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overviewType number Package PNP complementNXP JEDECPMBT2222 SOT23 TO-236AB PMBT2907PMBT2222A PMBT2907A1.2 Features and benefi

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT2222; PMBT2222ANPN switching transistors1999 Apr 27Product specificationSupersedes data of 1997 Sep 09Philips Semiconductors Product specificationNPN switching transistors PMBT2222; PMBT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIO

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088MMBT2222ANPN switching transistorProduct specification 2000 Apr 11Philips Semiconductors Product specificationNPN switching transistor MMBT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Switching and linear amplification.

MMBT2222ASMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingMMBT2222A M22 SILICON EPITAXIAL PLANAR NPNTRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE ISMMBT2907AAPPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOL

September 2008MMBT2222ATNPN Epitaxial Silicon TransistorFeaturesC General purpose amplifier transistor.E Ultra-Small Surface Mount Package for all types.B General purpose switching & amplification application Marking : A02 SOT-523FAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitVCBO Collector-Base Voltage 75 VVCEO Colle

MMBT2222AKNPN Epitaxial Silicon TransistorGeneral Purpose TransistorMarking31PK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 75 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 600 mAPC Collector Power Dissipation 350 mW

August 2010PN2222A / MMBT2222A / PZT2222ANPN General Purpose AmplifierFeatures This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19.PN2222A MMBT2222A PZT2222ACCEECBTO-92 SOT-23 SOT-223BMark:1PEBCAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value U

PN2222A MMBT2222A PZT2222ACCEECBTO-92 SOT-23 SOT-223BMark:1PEBCNPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19.Absolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collecto

MMBT2222NPN General Purpose Amplifier Sourced from process 19.CESOT-23BMark: 1BAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continuous 0.6 ATJ, TSTG Operating and Storage Junction Temperature Range -55

PMBT2222AYS40 V, 600 mA, double NPN switching transistor24 June 2015 Product data sheet1. General descriptionDouble NPN switching transistor in a very small SOT363 (TSSOP6) Surface-MountedDevice (SMD) plastic package.Double PNP complement: PMBT2907AYS2. Features and benefits Double general-purpose switching transistor High current (max. 600 mA) Voltage max. 40 V

PMBT2222; PMBT2222ANPN switching transistorsRev. 6 12 November 2010 Product data sheet1. Product profile1.1 General descriptionNPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overviewType number Package PNP complementNXP JEDECPMBT2222 SOT23 TO-236AB PMBT2907PMBT2222A PMBT2907A1.2 Features and benefi

PMBT2222AQA40 V, 600 mA NPN switching transistor21 September 2018 Product data sheet1. General descriptionNPN switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-MountedDevice (SMD) plastic package with visible and solderable side pads.PNP complement: PMBT2907AQA2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadl

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PMBT2222AMB40 V, 600 mA NPN switching transistor21 September 2018 Product data sheet1. General descriptionNPN switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-MountedDevice (SMD) plastic package.PNP complement: PMBT2907AMB2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadless ultra small SMD plastic package

PMBT2222AM40 V, 600 mA NPN switching transistor21 September 2018 Product data sheet1. General descriptionNPN switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device(SMD) plastic package.PNP complement: PMBT2907AM2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadless ultra small SMD plastic package L

NPN Silicon Switching Transistors SMBT 2222SMBT 2222 A High DC current gain: 0.1 mA to 500 mA Low collector-emitter saturation voltage Complementary types: SMBT 2907,SMBT 2907 A (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBT 2222 s1B Q68000-A6481 B E C SOT-23SMBT 2222 A s1P Q68000-A6473Maximum RatingsParameter Symbol Values UnitSMBT

MMBT2222AT 40V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 40V Case: SOT523 Case Material: Molded Plastic. Green Molding Compound. IC = 600mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals:

MMBT2222ALP440V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Low Collector-Emitter Saturation Voltage, VCE(sat) Case: X2-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. Ultra-Small Leadless Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moistu

MMBT2222A 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary PNP Type: MMBT2907A Case Material: Molded Plastic, Green Molding Compound; Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

SMBT2222A/MMBT2222ANPN Silicon Switching Transistor Low collector-emitter saturation voltage23 Complementary type: 1 SMBT2907A / MMBT2907A (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBT2222A/MMBT2222A s1P SOT231 = B 2 = E 3 = CMaximum RatingsParameter Symbol Value Unit40 VCollector-emitter

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMBT2222ATMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Capable of 150mWatts of Power Diss

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMBT2222ATMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Capable of 150mWatts of Power DissipationPurpose Amplifier Operating and Storage Junction T

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMBT2222AMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation, IC=600mANPN General Operating and Storage Junction Temperature: -55C to +150C Thermal resistance,Junction to Ambient:500oC/

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconwww.onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and1PPAP CapableBASE2MAXIMUM RATINGSEMITTERRating Symbol Valu

MMBT2222AM3T5GNPN General PurposeTransistorThe MMBT2222AM3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeamplifier applications and is housed in the SOT-723 surface mounthttp://onsemi.compackage. This device is ideal for low-power surface mountapplications where board space is at a premium.FeaturesCOLLECTOR3 Reduce

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique1Site and Control Change RequirementsBASE2MAXIMUM RATINGSEMITTERRating Symbo

MMBT2222ATT1General Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGS (TA = 25

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique1Site and Control Change RequirementsBASE2MAXIMUM RATINGSEMITTERRating Symbo

MMBT2222AM3T5GNPN General PurposeTransistorThe MMBT2222AM3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeamplifier applications and is housed in the SOT-723 surface mountwww.onsemi.compackage. This device is ideal for low-power surface mountapplications where board space is at a premium.COLLECTORFeatures3 Reduces B

MMBT2222AWT1G,SMMBT2222AWT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.Features AEC-Q101 Qualified and PPAP CapableSC-70 S Prefix for Automotive and Other Applications Requiring Uni

MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

MBT2222ADW1,NSVBT2222ADW1General Purpose TransistorNPN Siliconhttp://onsemi.comFeatures Moisture Sensitivity Level: 1 NSV Prefix for Automotive and Other Applications Requiring(3) (2) (1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableQ1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(4) (5) (6)MAXIM

MMBT2222LT1G,MMBT2222ALT1GGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO Vdc2MMBT2222LT1G 30MMBT2222ALT1G 40 EMITTERCollector-Base Voltage VCBO VdcMMBT2222LT1G 603MMBT2222ALT1G 75

MMBT2222AWT1G,SMMBT2222AWT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.Features AEC-Q101 Qualified and PPAP CapableSC-70 S Prefix for Automotive and Other Applications Requiring Uni

MMBT2222AWT1G,SMMBT2222AWT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.Features AEC-Q101 Qualified and PPAP CapableSC-70 S Prefix for Automotive and Other Applications Requiring Uni

MBT2222ADW1,NSVBT2222ADW1General Purpose TransistorNPN Siliconhttp://onsemi.comFeatures Moisture Sensitivity Level: 1 NSV Prefix for Automotive and Other Applications Requiring(3) (2) (1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableQ1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(4) (5) (6)MAXIM

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique1Site and Control Change RequirementsBASE2MAXIMUM RATINGSEMITTERRating Symbo

MMBT2222AWT1General Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1MAXIMUM RATINGSBASERating Symbo

UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE 33AMPLIFIER 1122 FEATURES SOT-23SOT-323(JEDEC TO-236)* This device is for use as a medium power amplifier and switchrequiring collector currents up to 600mA. 3112SOT-523 DFN1006-3 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing 1 2 3MMBT

SBT2222NPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application Features 3 Low Leakage current 1 Low collector saturation voltage enabling 2low voltage operation SOT-23 Complementary pair with SBT2907 Ordering Information Type NO. Marking Package Code 1B SBT2222 SOT-23 De

v SBT2222AUFNPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features Low Leakage current 1 Low collector saturation voltage enabling 2 low voltage operation Complementary pair with SBT2907AUF SOT-323F Ordering Information Type NO. Marking Package Code IQ SBT2222AUF SOT-323F

v SBT2222AUNPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application Features 3 Low Leakage current 1 Low collector saturation voltage enabling 2 low voltage operation Complementary pair with SBT2907AU SOT-323 Ordering Information Type NO. Marking Package Code IQ SBT2222AU SOT-323

SBT2222FNPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features Low Leakage current 1 Low collector saturation voltage enabling low voltage operation 2 SOT-23F Complementary pair with SBT2907F Ordering Information Type NO. Marking Package Code 1B SBT2222F SOT-23F

SBT2222AFNPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features Low Leakage current 1 Low collector saturation voltage enabling low voltage operation 2 SOT-23F Complementary pair with SBT2907AF Ordering Information Type NO. Marking Package Code 1P SBT2222AF SOT-23F

SBT2222A NPN Silicon Transistor Descriptions General purpose application Switching application COLLECTOR33Features 1 Low Leakage current BASE Low collector saturation voltage enabling low voltage operation 2 Complementary pair with SBT2907A EMITTERSOT-23 Ordering Information Part Number Marking * Package 1P SBT2222A SOT-2

CMBT2222ANPN Silicon Planar Epitaxial Transistors Pin configuration:1. BASE2. EMITTER3. COLLECTOR312Unit: inch (mm)Absolute Maximum RatingsSymbol Value UNITCollector-base voltage (open emitter)VCBOmax 75 VCollector-emmitter voltage (open base)VCEO max 40 VEmmitter base voltage (open collector)VEBO max 6.0 VICCollector current (d.c.) max 600 mATotal

MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-523 Epitaxial Planar Die Construction Complementary PNP Type Available(MMBT2907FW) Ideal for Medium Power Amplification and Switching MARKING CODE 1P PACKAGE INFORMATION Package MPQ Leader Size Millim

MMBT2222ANPN SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURESACOLLECTOR L Epitaxial Planar Die Construction333 Complementary PNP Type AvailableSTop ViewB(MMBT2907A)111 2 Ideal for Medium Power Amplification andBASE 2SwitchingV G2EMITTERCHJDKMAXIMUM

MMBT2222QNPN SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductSOT-89 1.BASED Dimensions In Millimeters Dimensions In Inches2.COLLECTORD1SymbolAMin Max Min Max 3.EMITTERA 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020FEATURESb1 0.360 0.560 0.014 0.022c 0.350 0.440 0.014 0.017D 4.400 4.600 0.173 0.181b1Power d

MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURE Complementary PNP Type Available(MMBT2907AW) AL Epitaxial Planar Die Construction 33 Ideal for Medium Power Amplification and Switching Top View C B11 22K EDMARKING CODE H JF GMM

MMBT2222A Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO 75 V High surge current capability VCEO 40 V Compliant to RoHS directive 2011/65/EU and VEBO 6 V in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT2222CMBT2222ASILICON PLANAR EPITAXIAL TRANSISTORSNPN silicon transistorsMarkingPACKAGE OUTLINE DETAILSCMBT2222 = lB ALL DIMENSIONS IN mmCMBT2222A = lPPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCMBT2222 C

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate TransistorsMMBT2222AM TRANSISTOR (NPN)SOT-723 FEATURES33 Epitaxial planar die construction Complementary PNP Type available(MMBT2907AM)11. BASE22.EMITTERMARKING: 1P 3.COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted )Symbol Parameter Value UnitVCBO Collector-Base Voltage 75 V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2222AT TRANSISTOR (NPN) FEATURES SOT523 Complementary to MMBT2907AT Small Package MARKING:1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage 75 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLL

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER Epitaxial planar die construction 3.COLLECTOR Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconHalogen-free typeLead free productCOLLECTOR33BASE1MMBT2222AGH 122SOT-23EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcTHERMAL CHARACTERISTICSChar

MMBT2222ATRANSISTOR(NPN)SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Voltage VEBO 6 VEmitter-Base Voltage IC Collector Current -C

MMBT2222TRANSISTOR(NPN)SOT23 FEATURES Genernal Purpose Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 75 V CBO2. EMITTER V Collector-Emitter Voltage 30 V CEO3. COLLECTOR V Emitter-Base Voltage 6 V EBOIC Collector Current 600 mA P Collector Power Dissipation 250 mW CR Thermal R

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM2222 GM2222AMAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol UnitGM2222 GM2222A Collector-Emitter VoltageVCEO 30 40 Vdc-

MMBT2222A SOT-23 Transistor(NPN)SOT-231. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emit

MMBT2222ALT1 NPN General Purpose Amplifier1. BASE 2. EMITTER3. COLLECTORFEATURES A SOT-23 Dim Min Max Epitaxial planar die construction. A 2.70 3.10EB 1.10 1.50 Complementary PNP type available K BC 1.0 TypicalMMBT2907A. D 0.4 TypicalE 0.35 0.48JD Ultra-small surface mount package. G 1.80 2.00GH 0.02 0.1J 0.1 TypicalHK 2.20 2.60APPLICATIO

MMBT2222ATCOLLECTORPlastic-Encapsulate Transistors33NPN Silicon 121BASEP b Lead(Pb)-FreeSC-892EMITTER (SOT-523F)MAXIMUM RATINGSValueRating SymbolUnit40Collector-Emitter Voltage VCEO Vdc75Collector-Base Voltage VCBOVdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcTHERMAL CHARACTERISTICSCharacteristics SymbolUnitMa

MBT2222ADWDual General Purpose Transistors2 13654NPN+NPN Silicon12345 6SOT-363(SC-88)NPN+NPNValueVCEO(1)150833T ,Tstg -55 to+150JMBT2222ADW=XXu1. Device mounted on FR4 glass epoxy printed circuit board usingthe minimum recommended footprintWEITRONhttp://www.weitron.com.twMBT2222ADWELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise not

MMBT2222MMBT2222A312SOT-23VCEOuWEITRONhttp://www.weitron.com.twMMBT2222MMBT2222AELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICS-DC Current GainhFE(IC=0.1 mAdc, VCE=10 Vdc) 35-(IC=1.0 mAdc, VCE=10 Vdc) 50--(IC=10 mAdc, VCE=10 Vdc) 75-35(IC=10 mAdc, VCE=10 Vdc, TA=-

MMBT2222AW312SOT-323(SC-70)ValueVCEO150833T ,Tstg -55 to+150JMMBT2222AW=P1(1)u1. Pulse Test: Pulse Width 300us, Duty Cycle 2.0%WEITRONhttp://www.weitron.com.twMMBT2222AWELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICS(1)DC Current Gain-(IC=0.1 mAdc, VCE=10 Vdc)35-(

FM120-M WILLASTHRUMMBT2222AWT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose TransistorsSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toNPN Silic

FM120-M MMBT2222ADW1T1WILLASTHRUDual General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to o

FM120-M WILLASTHRUMMBT2222ATT1General Purpose T BARRIER RECTIFIERS -20V- 200VransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process dNPN Siliconeesign, excellent power dissipation offers better reverse l akage current and thermal resistance.SOD-123H Low profile surface mounted application in order

FM120-M WILLASTHRUMMBT2222(A)LT1FM1200-M General Purpose Transistors1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeaturesNPN Batch process design, excellent power dissipation offersSilicon better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in orde

Spec. No. : HE6822 HI-SINCERITY Issued Date : 1993.06.30 Revised Date :2010.08.06 MICROELECTRONICS CORP. Page No. : 1/5 HMBT2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications. SOT-23 Features High frequency current gain High Speed Switching Abs

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR (NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V

Spec. No. : C203N3 Issued Date : 2002.05.11 CYStech Electronics Corp.Revised Date : 2010.11.12 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor MMBT2222ADescription The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT2222 TRANSISTOR (NPN) FEATURES Complimentary to MMBT2907 MARKING:1P MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

MMBT2222A Rev.G Aug.-2018 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 600mACollector currents up to 600 mA. / Applications General purpose amplifier. / Equivalent Circuit

MMBT2222 / MMBT2222A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications TO-236 Plastic PackageAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage MMBT2222 60 VCBO V MMBT2222A 75 Collector Emitter Voltage MMBT2222 30 VCEO V MMBT2222A 40 Emitter Base Voltage MMBT2222 5 VEBO V MMBT2222A 6 Collector Curr

LMBT2222ALT1GS-LMBT2222ALT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDev

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconThese transistors are designed for generalpurpose amplifier applications. They are LMBT2222AWT1Ghoused in the SOT323/SC70 package whichS-LMBT2222AWT1Gis designed for low power surface mountapplications.We declare that the material of product 3compliance with RoHS requirements.S- Prefix for Automotive a

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-

LESHAN RADIO COMPANY, LTD.General Purpose TransistorLMBT2222ATT1GNPN SiliconS-LMBT2222ATT1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-89 package whichis designed for low power surface mount applications.Featurescompliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive

LESHAN RADIO COMPANY, LTD.General Purpose TransistorLMBT2222ATT1GNPN SiliconS-LMBT2222ATT1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-89 package whichis designed for low power surface mount applications.Featurescompliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLMBT2222ALT1GFEATURESS-LMBT2222ALT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12SOT-23DEVICE MARKING AN

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-

3DG2222A(BT2222A) NPN PCM TC75 300 mW ICM 600 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB0.1mA 75 V V(BR)CEO ICE0.1mA 40 V V(BR)EBO IEB0.1mA 6.0 V ICBO VCB=10V 1.0 A IEBO VCB=4V 1.0 A IC=0.5A VCEsat 0.6 V IB=0.05A VCE=10V

SMD Type TransistorsProduct specificationKMBT2222ASOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13 Features High current (max. 600 mA) Low voltage (max.40 V).1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 75 VCollector-emitter voltag

MMBT2222LTG,MMBT2222ALTGGeneral Purpose TransistorsFeaturesPackage outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish3Ordering Information1Device Package ShippingMMBT2222LTG SOT23 3000/Tape & Reel 2MMBT2222ALTG SOT23 3000/Tape & ReelSOT23Maximum RatingsRating Symbol 2222 2222A Unit3COLLECTORCollectorEmitter Vo

SMD Type TransistorsNPN TransistorsMMBT2222AT (KMBT2222AT)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Small Package Complementary to MMBT2907AT30.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll

D e s st sNPN TransistorsMMBT2222A (KMBT2222A)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.131 2 +0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.1 )1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collec

SMD Type TransistorsNPN TransistorsMMBT2222AT (KMBT2222AT)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Small Package Complementary to MMBT2907AT30.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll

SMD Type TransistorsNPN Switching TransistorKMBT2222ASOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13 Features High current (max. 600 mA) Low voltage (max.40 V).1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 75 VCollector-emitter vol

MMBT2222ANPN GENERAL PURPOSE SWITCHING TRANSISTOR40 Volt POWER 225 mWattVOLTAGEFEATURES NPN epitaxial silicon, planar design0.120(3.04)0.110(2.80) Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard0.056(1.40)0.047(1.20)0.079(2.00) 0.008(0.20)0.070

MMBT2222AWNPN GENERAL PURPOSE SWITCHING TRANSISTOR40 Volt POWER 150 mWattVOLTAGEFEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)MECHANICAL DATA Case: SOT-323, Plastic Te

Small Signal TransistorMMBT2222A-G (NPN)RoHS DeviceFeaturesSOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application.0.118(3.00)0.110(2.80)3Mechanical data 0.055(1.40)0.047(1.20) -Case: SOT-23, molded plastic. 1 20.079(2.00)0.071(1.80) -Terminals: solderable per MIL-STD-750, method 2026.0.006(0.15)0.003(0.08) -Approx. weight: 0

Small Signal TransistorMMBT2222A-HF (NPN)RoHS DeviceHalogen FreeFeaturesSOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application.0.118(3.00)0.110(2.80)3Mechanical data 0.055(1.40)0.047(1.20) -Case: SOT-23, molded plastic. 1 20.079(2.00)0.071(1.80) -Terminals: solderable per MIL-STD-750, method 2026.0.006(0.15)0.003(0.08) -Ap

DC COMPONENTS CO., LTD.DMBT2222ADISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose switching and amplifier applications.SOT-23.020(0.50).012(0.30)Pinning1 = Base 32 = Emitter .063(1.60) .108(0.65).055(1.40) .089(0.25)3 = Collector1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.

DC COMPONENTS CO., LTD.DMBT2222DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose switching and amplifier applications.SOT-23.020(0.50).012(0.30)Pinning1 = Base 32 = Emitter .063(1.60) .108(0.65).055(1.40) .089(0.25)3 = Collector1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.8

GSTMMBT2222A NPN General Purpose Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Freeamplifier and switch. Packages & Pin Assignments GSTMMBT2222AF(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT2222AF SOT-23 1POrdering Information GS P/NGSTMMBT2222A FPb Fre

KBT2222AC NPN Silicon Transistor 2018.03.28 2018.03.28 2018.03.28 2018.03.28 1 000 2018.03.28 AUK Dalian 1 KBT2222AC NPN Silicon Transistor Descriptions General purpose application

MMBT2222/MMBT2222AFEATURESFEATURESFEATURESFEATURESNPN Switching TransistorMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSSymbolUnitCharacteristic MMBT2222 MMBT2222ACollector-Emitter VoltageV 30 40 VdcCEOCollector-Base Voltage V 60 75 VdcCBOEmitter-Base Voltage V 5.0 6.0 VdcEBOCollector Current-Continuous Ic 600 600 mAdcTHERMAL CHARACTERISTI

MMBT2222AWNPN General Purpose Transistor321.Base2.Emitter3.Collector1Features Simplified outline(SOT-323)General purpose transistor.3.COLLECTOR1.BASE2.EMITTERAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-emitter voltage VCEO 40 VCollector-base voltage VCBO 75 VEmitter-base voltage VEBO 6.0 VCollector current IC 600 mATotal Devic

RUMW UMW MMBT2222ASOT-23 Plastic-Encapsulate TransistorsSOT-23 MMBT2222A TRANSISTOR (NPN) FEATURES 1. BASE Epitaxial planar die construction 2. EMITTER Complementary PNP Type available(MMBT2907A) 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Voltage VEBO

RoHS MMBT2222LT1SOT-23 TRANSISTORDescription SOT-23Dimensions(Unit:mm) Medium Power Amplifier. NPN Silicon Transistor.2.30.21.30.20.5Ref. hFE RANK0.5Ref.Features Large collector current:ICmax=600mA23 Low collector saturation voltage 1P enabling low voltage operation1 Complementary pair with . Type Name0.38Ref.MINO.1 0.01-0.101.EMITTER2.BASE

MMBT2222ATransistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS FeaturesSOT-23 Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 70 V1. BASE VCEO Collector-Emitter Voltage 40 V 2. EMITT

SMD NPN TransistorFormosa MSMMBT2222 / MMBT2222AGeneral Purpose TransistorNPN SiliconPackage outlineFeatures High collector-emitterbreakdien voltage.SOT-23(BV = 40V@I =10mA)CEO C Small load switch transistor with high gain and lowstauration voltage, is designed for general purposeamflifier and switching applications at collector current. Capable of 225mW pow

MMBT2222ASOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )SOT- 23Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) Marking: 1PSymbol Parameter Value Unit VCBO Collector-Base Voltage 75 V V Collector-Emitter Voltage 40 V CEOV Emitter-Base Voltage 6 V EBOCI Collector Current 600 mA CP Collector Power D

MMBT2222A NPN General Purpose Amplifier FEATURES Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package. MSL 1 APPLICATIONS Use as a medium power amplifier. Switching requiring collector currents up to 500mA. SOT-23 MAXIMUM RA TING @ Ta=25 unless otherwise specified Symbol Parameter Valu

Jiangsu Yutai Electronics Co.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER Epitaxial planar die construction 3.COLLECTOR Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Vo

www.msksemi.comMMBT2222A-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A-MS)1. BASEMARKING:1P2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Em

DATA SHEET MMBT2222A GENERAL PURPOSE TRANSISTOR NPN CURRENT 600 mA POWER 300 mW FEATURES HIGH DC CURRENT GAIN EPITAXIAL PLANAR DIE CONSTRUCTION COMPLEMENTARY PNP YTPE AVAILABLE MMBT2907/A LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASESOT-23 TERMINALSOLDERABLE PER MIL-STD-220G, METHOD 208 APPROX. WEIGHT:0.008 GRAMS CASESOT-23 MAXIMUM RATINGS

MMBT2222/MMBT2222ANPN Silicon Epitaxial Planar TransistorSOT-23Features For switching and amplifier applications3121.B 2.E 3.CAbsolute Maximum Ratings (Ta=25 )Parameter Symbol Value UnitCollector Base Voltage MMBT2222 60VCBO VMMBT2222A 75Collector Emitter Voltage MMBT2222 30VCEO VMMBT2222A 40Emitter Base Voltage MMBT2222 5VEBO VMMBT2222A 6Collector

Jingdao Microelectronics co.LTD MMBT2222AMMBT2222ASOT-23NPN TRANSISTOR3FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 75 V2.EMITTERCollectorEmitte

MMBT2222A TRANSISTOR(NPN)SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT2907 ; Complementary to MMBT2907 250mW; Power Dissipation of 250mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

MMBT2222A SOT-23 NPN Transistors32 1.Base2.Emitter1 3.Collector ) Simplified outline(SOT-23) Mrarking Marking 1P Absolute Maximum Ratin gs Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 70Collector - Emitter Voltage VCEO 40 VEmitter - Base Voltage VEBO 6Collector Current - Continuous IC 600 mAPower Dissipation PD

MMBT2222 SOT-23 Plastic-Encapsulate Transistors MMBT2222 TRANSISTOR (NPN) FEATURES Complimentary to MMBT2907 MARKING:1P MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 75 V VCEO Collector-Emitter Voltage -

MMBT2222AAO3400SI2305MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1BASE 2EMITTER 3COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage

RoHS RoHSCOMPLIANT COMPLIANTMMBT2222A NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 94 V-0 flamm

RoHS RoHSCOMPLIANT COMPLIANTMMBT2222AQ NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data Case: SOT-23 Terminals: Tin plated lead

TH09/2479TH97/2478 IATF 0113686SGS TH07/1033www.eicsemi.comMMBT2222E / MMBT2222AE NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage MMBT2222E 60 VCBO V MMBT2222AE 75 Collector Emitter Voltage MMBT2222E 30 VCEO V MMBT2222AE 40 Emitter Base Voltage

MMBT2222A MMBT2222A SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT2907A Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT2222A 1P . Maximu

MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1BASE 2EMITTER 3COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Curren

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT2222A FEATURES NPN Switching Transistor MAXIMUM RATINGS Characteristic Symbol UnitMMBT2222 MMBT2222A Collector-Emitter VoltageV 30 40 VdcCEO-Collector-Base VoltageV 60 75 VdcCBO-

MMBT2222ANPN GENERAL PURPOSE SWITCHING TRANSISTOR75Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V.Collector current IC=0.6A.ansition frequency fT>250MHz @ TrIC=20mAdc, VCE=20Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: S

MMBT2222ABIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBT2907A Epitaxial planar die construction Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitC

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTORFeatures ASOT-23C Dim Min Max A0.37 0.51B C 1.20 1.40BTOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.80 3.00JJ0.013 0.10K0.903

HMBT2222ANPN-TRANSISTORNPN, 600mA, 40V NPN NPN Switching Transistor SMDHMBT2222AHMBT2222ALT1NPN, BECExcellent hFE linearityGeneral Purpose TransistorsLow noiseComplementary to HMBT2907A3DK2222AMPS2222ATransistor Polarity: NPNMMBT2222A