BT2222 Specs and Replacement
Type Designator: BT2222
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN: 75
Package: SOT23
BT2222 Substitution
- BJT ⓘ Cross-Reference Search
BT2222 datasheet
BT2222 NPN PCM TC=25 350 mW ICM 1000 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.01mA 75 V V(BR)CEO ICE=0.01mA 40 V V(BR)EBO IEB=0.01mA 6.0 V ICBO VCB=60V 0.01 A IEBO VEB=3V 0.01 A VBEsat 1.5 IC=150mA V IB=15mA VCEsat 0.3 ... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2222AWT1/D Preliminary Information MMBT2222AWT1 General Purpose Transistor Motorola Preferred Device NPN Silicon These transistors are designed for general purpose amplifier applica- tions. They are housed in the SOT 323/SC 70 package which is designed for low power surface mount applications. COLLECTOR 3 3 1 1... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2222LT1/D MMBT2222LT1 General Purpose Transistors * MMBT2222ALT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2222 2222A Unit 2 Collector Emitter Voltage VCEO 30 40 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 60 75 Vdc SOT 23 (TO 23... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2222LT1/D MMBT2222LT1 General Purpose Transistors * MMBT2222ALT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2222 2222A Unit 2 Collector Emitter Voltage VCEO 30 40 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 60 75 Vdc SOT 23 (TO 23... See More ⇒
PMBT2222; PMBT2222A NPN switching transistors Rev. 6 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement NXP JEDEC PMBT2222 SOT23 TO-236AB PMBT2907 PMBT2222A PMBT2907A 1.2 Features and benefi... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT2222; PMBT2222A NPN switching transistors 1999 Apr 27 Product specification Supersedes data of 1997 Sep 09 Philips Semiconductors Product specification NPN switching transistors PMBT2222; PMBT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIO... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Switching and linear amplification. ... See More ⇒
MMBT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT2907A APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOL... See More ⇒
September 2008 MMBT2222AT NPN Epitaxial Silicon Transistor Features C General purpose amplifier transistor. E Ultra-Small Surface Mount Package for all types. B General purpose switching & amplification application Marking A02 SOT-523F Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Colle... See More ⇒
MMBT2222AK NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1PK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 350 mW ... See More ⇒
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August 2010 PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19. PN2222A MMBT2222A PZT2222A C C E E C B TO-92 SOT-23 SOT-223 B Mark 1P EBC Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value U... See More ⇒
PN2222A MMBT2222A PZT2222A C C E E C B TO-92 SOT-23 SOT-223 B Mark 1P EBC NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19. Absolute Maximum Ratings * Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collecto... See More ⇒
MMBT2222 NPN General Purpose Amplifier Sourced from process 19. C E SOT-23 B Mark 1B Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 0.6 A TJ, TSTG Operating and Storage Junction Temperature Range -55 ... See More ⇒
PMBT2222; PMBT2222A NPN switching transistors Rev. 6 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement NXP JEDEC PMBT2222 SOT23 TO-236AB PMBT2907 PMBT2222A PMBT2907A 1.2 Features and benefi... See More ⇒
PMBT2222AQA 40 V, 600 mA NPN switching transistor 21 September 2018 Product data sheet 1. General description NPN switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PMBT2907AQA 2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadl... See More ⇒
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
PMBT2222AM 40 V, 600 mA NPN switching transistor 21 September 2018 Product data sheet 1. General description NPN switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device (SMD) plastic package. PNP complement PMBT2907AM 2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadless ultra small SMD plastic package L... See More ⇒
NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain 0.1 mA to 500 mA Low collector-emitter saturation voltage Complementary types SMBT 2907, SMBT 2907 A (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 2222 s1B Q68000-A6481 B E C SOT-23 SMBT 2222 A s1P Q68000-A6473 Maximum Ratings Parameter Symbol Values Unit SMBT ... See More ⇒
MMBT2222AT 40V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 40V Case SOT523 Case Material Molded Plastic. Green Molding Compound. IC = 600mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals ... See More ⇒
MMBT2222ALP4 40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Low Collector-Emitter Saturation Voltage, VCE(sat) Case X2-DFN1006-3 Case Material Molded Plastic, "Green" Molding Compound. Ultra-Small Leadless Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moistu... See More ⇒
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MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2222AT Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 150mWatts of Power Diss... See More ⇒
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MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2222A Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation, IC=600mA NPN General Operating and Storage Junction Temperature -55 C to +150 C Thermal resistance,Junction to Ambient 500oC/... See More ⇒
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MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon www.onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and 1 PPAP Capable BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Valu... See More ⇒
MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount http //onsemi.com package. This device is ideal for low-power surface mount applications where board space is at a premium. Features COLLECTOR 3 Reduce... See More ⇒
MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements BASE 2 MAXIMUM RATINGS EMITTER Rating Symbo... See More ⇒
MMBT2222ATT1 General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS (TA = 25 ... See More ⇒
MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang... See More ⇒
MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features Moisture Sensitivity Level 1 http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (3) (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Q1 Q2 Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc (4) (5) (6) Emitter-Base Voltage VEBO 6.0 Vdc Collector Cur... See More ⇒
MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang... See More ⇒
MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang... See More ⇒
MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements BASE 2 MAXIMUM RATINGS EMITTER Rating Symbo... See More ⇒
MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount www.onsemi.com package. This device is ideal for low-power surface mount applications where board space is at a premium. COLLECTOR Features 3 Reduces B... See More ⇒
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MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni... See More ⇒
MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features Moisture Sensitivity Level 1 http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (3) (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Q1 Q2 Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc (4) (5) (6) Emitter-Base Voltage VEBO 6.0 Vdc Collector Cur... See More ⇒
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MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang... See More ⇒
MBT2222ADW1, NSVBT2222ADW1 General Purpose Transistor NPN Silicon http //onsemi.com Features Moisture Sensitivity Level 1 NSV Prefix for Automotive and Other Applications Requiring (3) (2) (1) Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable Q1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (4) (5) (6) MAXIM... See More ⇒
MMBT2222LT1G, MMBT2222ALT1G General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 2 MMBT2222LT1G 30 MMBT2222ALT1G 40 EMITTER Collector-Base Voltage VCBO Vdc MMBT2222LT1G 60 3 MMBT2222ALT1G 75 ... See More ⇒
MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni... See More ⇒
MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni... See More ⇒
MBT2222ADW1, NSVBT2222ADW1 General Purpose Transistor NPN Silicon http //onsemi.com Features Moisture Sensitivity Level 1 NSV Prefix for Automotive and Other Applications Requiring (3) (2) (1) Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable Q1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (4) (5) (6) MAXIM... See More ⇒
MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements BASE 2 MAXIMUM RATINGS EMITTER Rating Symbo... See More ⇒
MMBT2222AWT1 General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 MAXIMUM RATINGS BASE Rating Symbo... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE 3 3 AMPLIFIER 1 1 2 2 FEATURES SOT-23 SOT-323 (JEDEC TO-236) * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. 3 1 1 2 SOT-523 DFN1006-3 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing 1 2 3 MMBT... See More ⇒
SBT2222 NPN Silicon Transistor Descriptions PIN Connection General purpose application Switching application Features 3 Low Leakage current 1 Low collector saturation voltage enabling 2 low voltage operation SOT-23 Complementary pair with SBT2907 Ordering Information Type NO. Marking Package Code 1B SBT2222 SOT-23 De... See More ⇒
SBT2222F NPN Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features Low Leakage current 1 Low collector saturation voltage enabling low voltage operation 2 SOT-23F Complementary pair with SBT2907F Ordering Information Type NO. Marking Package Code 1B SBT2222F SOT-23F ... See More ⇒
SBT2222A NPN Silicon Transistor Descriptions General purpose application Switching application COLLECTOR 3 3 Features 1 Low Leakage current BASE Low collector saturation voltage enabling low voltage operation 2 Complementary pair with SBT2907A EMITTER SOT-23 Ordering Information Part Number Marking * Package 1P SBT2222A SOT-2... See More ⇒
CMBT2222A NPN Silicon Planar Epitaxial Transistors Pin configuration 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit inch (mm) Absolute Maximum Ratings Symbol Value UNIT Collector-base voltage (open emitter) VCBO max 75 V Collector-emmitter voltage (open base) VCEO max 40 V Emmitter base voltage (open collector) VEBO max 6.0 V IC Collector current (d.c.) max 600 mA Total ... See More ⇒
MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-523 Epitaxial Planar Die Construction Complementary PNP Type Available(MMBT2907FW) Ideal for Medium Power Amplification and Switching MARKING CODE 1P PACKAGE INFORMATION Package MPQ Leader Size Millim... See More ⇒
MMBT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES A COLLECTOR L Epitaxial Planar Die Construction 3 3 3 Complementary PNP Type Available S Top View B (MMBT2907A) 1 1 1 2 Ideal for Medium Power Amplification and BASE 2 Switching V G 2 EMITTER C H J D K MAXIMUM... See More ⇒
MMBT2222Q NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-89 1.BASE D Dimensions In Millimeters Dimensions In Inches 2.COLLECTOR D1 Symbol A Min Max Min Max 3.EMITTER A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 FEATURES b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 b1 Power d... See More ⇒
MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURE Complementary PNP Type Available(MMBT2907AW) A L Epitaxial Planar Die Construction 3 3 Ideal for Medium Power Amplification and Switching Top View C B 1 1 2 2 K E D MARKING CODE H J F G MM... See More ⇒
MMBT2222A Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO 75 V High surge current capability VCEO 40 V Compliant to RoHS directive 2011/65/EU and VEBO 6 V in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2222 CMBT2222A SILICON PLANAR EPITAXIAL TRANSISTORS N P N silicon transistors Marking PACKAGE OUTLINE DETAILS CMBT2222 = lB ALL DIMENSIONS IN mm CMBT2222A = lP Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS CMBT2222 C... See More ⇒
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors MMBT2222AM TRANSISTOR (NPN) SOT-723 FEATURES 3 3 Epitaxial planar die construction Complementary PNP Type available(MMBT2907AM) 1 1. BASE 2 2.EMITTER MARKING 1P 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2222AT TRANSISTOR (NPN) FEATURES SOT 523 Complementary to MMBT2907AT Small Package MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 75 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLL... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER Epitaxial planar die construction 3.COLLECTOR Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 ... See More ⇒
Zowie Technology Corporation General Purpose Transistor NPN Silicon Halogen-free type Lead free product COLLECTOR 3 3 BASE 1 MMBT2222AGH 1 2 2 SOT-23 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc THERMAL CHARACTERISTICS Char... See More ⇒
MMBT2222A TRANSISTOR(NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage VEBO 6 V Emitter-Base Voltage IC Collector Current -C... See More ⇒
MMBT2222 TRANSISTOR(NPN) SOT 23 FEATURES Genernal Purpose Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 75 V CBO 2. EMITTER V Collector-Emitter Voltage 30 V CEO 3. COLLECTOR V Emitter-Base Voltage 6 V EBO IC Collector Current 600 mA P Collector Power Dissipation 250 mW C R Thermal R... See More ⇒
MMBT2222A SOT-23 Transistor(NPN) SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emit... See More ⇒
MMBT2222ALT1 NPN General Purpose Amplifier 1. BASE 2. EMITTER 3. COLLECTOR FEATURES A SOT-23 Dim Min Max Epitaxial planar die construction. A 2.70 3.10 E B 1.10 1.50 Complementary PNP type available K B C 1.0 Typical MMBT2907A. D 0.4 Typical E 0.35 0.48 J D Ultra-small surface mount package. G 1.80 2.00 G H 0.02 0.1 J 0.1 Typical H K 2.20 2.60 APPLICATIO... See More ⇒
MMBT2222AT COLLECTOR Plastic-Encapsulate Transistors 3 3 NPN Silicon 1 2 1 BASE P b Lead(Pb)-Free SC-89 2 EMITTER (SOT-523F) MAXIMUM RATINGS Value Rating Symbol Unit 40 Collector-Emitter Voltage V CEO Vdc 75 Collector-Base Voltage VCBO Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteristics Symbol Unit Ma... See More ⇒
MBT2222ADW Dual General Purpose Transistors 2 1 3 6 5 4 NPN+NPN Silicon 1 2 3 4 5 6 SOT-363(SC-88) NPN+NPN Value VCEO (1) 150 833 T ,Tstg -55 to+150 J MBT2222ADW=XX u 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint WEITRON http //www.weitron.com.tw MBT2222ADW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise not... See More ⇒
MMBT2222 MMBT2222A 3 1 2 SOT-23 VCEO u WEITRON http //www.weitron.com.tw MMBT2222 MMBT2222A ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS - DC Current Gain hFE (IC=0.1 mAdc, VCE=10 Vdc) 35 - (IC=1.0 mAdc, VCE=10 Vdc) 50 - - (IC=10 mAdc, VCE=10 Vdc) 75 - 35 (IC=10 mAdc, VCE=10 Vdc, TA=-... See More ⇒
MMBT2222AW 3 1 2 SOT-323(SC-70) Value VCEO 150 833 T ,Tstg -55 to+150 J MMBT2222AW=P1 (1) u 1. Pulse Test Pulse Width 300us, Duty Cycle 2.0% WEITRON http //www.weitron.com.tw MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS(1) DC Current Gain - (IC=0.1 mAdc, VCE=10 Vdc) 35 - (... See More ⇒
FM120-M WILLAS THRU MMBT2222AWT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to NPN Silic... See More ⇒
FM120-M MMBT2222ADW1T1 WILLAS THRU Dual General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to o... See More ⇒
FM120-M WILLAS THRU MMBT2222ATT1 General Purpose T BARRIER RECTIFIERS -20V- 200V ransistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process d NPN Siliconeesign, excellent power dissipation offers better reverse l akage current and thermal resistance. SOD-123H Low profile surface mounted application in order ... See More ⇒
FM120-M WILLAS THRU MMBT2222(A)LT1 FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features NPN Batch process design, excellent power dissipation offers Silicon better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in orde... See More ⇒
Spec. No. HE6822 HI-SINCERITY Issued Date 1993.06.30 Revised Date 2010.08.06 MICROELECTRONICS CORP. Page No. 1/5 HMBT2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications. SOT-23 Features High frequency current gain High Speed Switching Abs... See More ⇒
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR (NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V ... See More ⇒
Spec. No. C203N3 Issued Date 2002.05.11 CYStech Electronics Corp. Revised Date 2010.11.12 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor MMBT2222A Description The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/... See More ⇒
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT2222 TRANSISTOR (NPN) FEATURES Complimentary to MMBT2907 MARKING 1P MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B... See More ⇒
MMBT2222A Rev.G Aug.-2018 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 600mA Collector currents up to 600 mA. / Applications General purpose amplifier. / Equivalent Circuit ... See More ⇒
MMBT2222 / MMBT2222A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage MMBT2222 60 VCBO V MMBT2222A 75 Collector Emitter Voltage MMBT2222 30 VCEO V MMBT2222A 40 Emitter Base Voltage MMBT2222 5 VEBO V MMBT2222A 6 Collector Curr... See More ⇒
lmbt2222alt1g lmbt2222alt3g.pdf
LMBT2222ALT1G S-LMBT2222ALT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Dev... See More ⇒
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are LMBT2222AWT1G housed in the SOT 323/SC 70 package which S-LMBT2222AWT1G is designed for low power surface mount applications. We declare that the material of product 3 compliance with RoHS requirements. S- Prefix for Automotive a... See More ⇒
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Silicon LMBT2222ADW1T1G S-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring 6 5 Unique Site and Control Change Requirements; 4 AEC-Q101 Qualified and PPAP Capable. 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-... See More ⇒
LESHAN RADIO COMPANY, LTD. General Purpose Transistor LMBT2222ATT1G NPN Silicon S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Features compliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive ... See More ⇒
lmbt2222att1g lmbt2222att3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistor LMBT2222ATT1G NPN Silicon S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Features compliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive ... See More ⇒
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LMBT2222ALT1G FEATURES S-LMBT2222ALT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 3 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT-23 DEVICE MARKING AN... See More ⇒
lmbt2222adw1t1g lmbt2222adw1t3g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Silicon LMBT2222ADW1T1G S-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring 6 5 Unique Site and Control Change Requirements; 4 AEC-Q101 Qualified and PPAP Capable. 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-... See More ⇒
3DG2222A(BT2222A) NPN PCM TC 75 300 mW ICM 600 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB 0.1mA 75 V V(BR)CEO ICE 0.1mA 40 V V(BR)EBO IEB 0.1mA 6.0 V ICBO VCB=10V 1.0 A IEBO VCB=4V 1.0 A IC=0.5A VCEsat 0.6 V IB=0.05A VCE=10V... See More ⇒
SMD Type Transistors Product specification KMBT2222A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features High current (max. 600 mA) Low voltage (max.40 V). 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 75 V Collector-emitter voltag... See More ⇒
MMBT2222LTG,MMBT2222ALTG General Purpose Transistors Features Package outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish 3 Ordering Information 1 Device Package Shipping MMBT2222LTG SOT 23 3000/Tape & Reel 2 MMBT2222ALTG SOT 23 3000/Tape & Reel SOT 23 Maximum Ratings Rating Symbol 2222 2222A Unit 3 COLLECTOR Collector Emitter Vo... See More ⇒
SMD Type Transistors NPN Transistors MMBT2222AT (KMBT2222AT) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 Small Package Complementary to MMBT2907AT 3 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll... See More ⇒
D e s st s NPN Transistors MMBT2222A (KMBT2222A) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 ) 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collec... See More ⇒
SMD Type Transistors NPN Transistors MMBT2222AT (KMBT2222AT) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 Small Package Complementary to MMBT2907AT 3 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll... See More ⇒
SMD Type Transistors NPN Switching Transistor KMBT2222A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features High current (max. 600 mA) Low voltage (max.40 V). 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 75 V Collector-emitter vol... See More ⇒
MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 225 mWatt VOLTAGE FEATURES NPN epitaxial silicon, planar design 0.120(3.04) 0.110(2.80) Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.008(0.20) 0.070... See More ⇒
MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 150 mWatt VOLTAGE FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case SOT-323, Plastic Te... See More ⇒
Small Signal Transistor MMBT2222A-G (NPN) RoHS Device Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case SOT-23, molded plastic. 1 2 0.079(2.00) 0.071(1.80) -Terminals solderable per MIL-STD-750, method 2026. 0.006(0.15) 0.003(0.08) -Approx. weight 0... See More ⇒
Small Signal Transistor MMBT2222A-HF (NPN) RoHS Device Halogen Free Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case SOT-23, molded plastic. 1 2 0.079(2.00) 0.071(1.80) -Terminals solderable per MIL-STD-750, method 2026. 0.006(0.15) 0.003(0.08) -Ap... See More ⇒
DC COMPONENTS CO., LTD. DMBT2222A DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 3 2 = Emitter .063(1.60) .108(0.65) .055(1.40) .089(0.25) 3 = Collector 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.... See More ⇒
DC COMPONENTS CO., LTD. DMBT2222 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 3 2 = Emitter .063(1.60) .108(0.65) .055(1.40) .089(0.25) 3 = Collector 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.8... See More ⇒
GSTMMBT2222A NPN General Purpose Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Free amplifier and switch. Packages & Pin Assignments GSTMMBT2222AF(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT2222AF SOT-23 1P Ordering Information GS P/N GSTMMBT2222A F Pb Fre... See More ⇒
KBT2222AC NPN Silicon Transistor 2018.03.28 2018.03.28 2018.03.28 2018.03.28 1 000 2018.03.28 AUK Dalian 1 KBT2222AC NPN Silicon Transistor Descriptions General purpose application... See More ⇒
MMBT2222/MMBT2222A FEATURES FEATURES FEATURES FEATURES NPN Switching Transistor MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Symbol Unit Characteristic MMBT2222 MMBT2222A Collector-Emitter Voltage V 30 40 Vdc CEO Collector-Base Voltage V 60 75 Vdc CBO Emitter-Base Voltage V 5.0 6.0 Vdc EBO Collector Current-Continuous Ic 600 600 mAdc THERMAL CHARACTERISTI... See More ⇒
MMBT2222AW NPN General Purpose Transistor 3 2 1.Base 2.Emitter 3.Collector 1 Features Simplified outline(SOT-323) General purpose transistor. 3.COLLECTOR 1.BASE 2.EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 75 V Emitter-base voltage VEBO 6.0 V Collector current IC 600 mA Total Devic... See More ⇒
R UMW UMW MMBT2222A SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) FEATURES 1. BASE Epitaxial planar die construction 2. EMITTER Complementary PNP Type available(MMBT2907A) 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage VEBO... See More ⇒
RoHS MMBT2222LT1 SOT-23 TRANSISTOR Description SOT-23 Dimensions(Unit mm) Medium Power Amplifier. NPN Silicon Transistor. 2.3 0.2 1.3 0.2 0.5Ref. hFE RANK 0.5Ref. Features Large collector current ICmax=600mA 2 3 Low collector saturation voltage 1P enabling low voltage operation 1 Complementary pair with . Type Name 0.38Ref. MINO.1 0.01-0.10 1.EMITTER 2.BASE ... See More ⇒
MMBT2222A Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS Features SOT-23 Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V 1. BASE VCEO Collector-Emitter Voltage 40 V 2. EMITT... See More ⇒
SMD NPN Transistor Formosa MS MMBT2222 / MMBT2222A General Purpose Transistor NPN Silicon Package outline Features High collector-emitterbreakdien voltage. SOT-23 (BV = 40V@I =10mA) CEO C Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current. Capable of 225mW pow... See More ⇒
MMBT2222A SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) SOT- 23 Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) Marking 1P Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V EBO C I Collector Current 600 mA C P Collector Power D... See More ⇒
MMBT2222A NPN General Purpose Amplifier FEATURES Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package. MSL 1 APPLICATIONS Use as a medium power amplifier. Switching requiring collector currents up to 500mA. SOT-23 MAXIMUM RA TING @ Ta=25 unless otherwise specified Symbol Parameter Valu... See More ⇒
Jiangsu Yutai Electronics Co.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER Epitaxial planar die construction 3.COLLECTOR Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Vo... See More ⇒
www.msksemi.com MMBT2222A-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A- MS) 1. BASE MARKING 1P 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Em... See More ⇒
DATA SHEET MMBT2222A GENERAL PURPOSE TRANSISTOR NPN CURRENT 600 mA POWER 300 mW FEATURES HIGH DC CURRENT GAIN EPITAXIAL PLANAR DIE CONSTRUCTION COMPLEMENTARY PNP YTPE AVAILABLE MMBT2907/A LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASE SOT-23 TERMINAL SOLDERABLE PER MIL-STD-220G, METHOD 208 APPROX. WEIGHT 0.008 GRAMS CASE SOT-23 MAXIMUM RATINGS ... See More ⇒
MMBT2222/MMBT2222A NPN Silicon Epitaxial Planar Transistor SOT-23 Features For switching and amplifier applications 3 1 2 1.B 2.E 3.C Absolute Maximum Ratings (Ta=25 ) Parameter Symbol Value Unit Collector Base Voltage MMBT2222 60 VCBO V MMBT2222A 75 Collector Emitter Voltage MMBT2222 30 VCEO V MMBT2222A 40 Emitter Base Voltage MMBT2222 5 VEBO V MMBT2222A 6 Collector ... See More ⇒
Jingdao Microelectronics co.LTD MMBT2222A MMBT2222A SOT-23 NPN TRANSISTOR 3 FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 75 V 2.EMITTER Collector Emitte... See More ⇒
MMBT2222A SOT-23 NPN Transistors 3 2 1.Base 2.Emitter 1 3.Collector ) Simplified outline(SOT-23) Mrarking Marking 1P Absolute Maximum Ratin gs Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Power Dissipation PD ... See More ⇒
MMBT2222 SOT-23 Plastic-Encapsulate Transistors MMBT2222 TRANSISTOR (NPN) FEATURES Complimentary to MMBT2907 MARKING 1P MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 75 V VCEO Collector-Emitter Voltage - ... See More ⇒
MMBT2222A AO3400 SI2305 MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage ... See More ⇒
RoHS RoHS COMPLIANT COMPLIANT MMBT2222A NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flamm... See More ⇒
RoHS RoHS COMPLIANT COMPLIANT MMBT2222AQ NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data Case SOT-23 Terminals Tin plated lead... See More ⇒
TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com MMBT2222E / MMBT2222AE NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage MMBT2222E 60 VCBO V MMBT2222AE 75 Collector Emitter Voltage MMBT2222E 30 VCEO V MMBT2222AE 40 Emitter Base Voltage... See More ⇒
MMBT2222A MMBT2222A SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT2907A Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT2222A 1P . Maximu... See More ⇒
MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Curren... See More ⇒
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT2222A FEATURES NPN Switching Transistor MAXIMUM RATINGS Characteristic Symbol Unit MMBT2222 MMBT2222A Collector-Emitter Voltage V 30 40 Vdc CEO - Collector-Base Voltage V 60 75 Vdc CBO - ... See More ⇒
MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR 75Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V. Collector current IC=0.6A. ansition frequency fT>250MHz @ Tr IC=20mAdc, VCE=20Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals S... See More ⇒
MMBT2222A BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBT2907A Epitaxial planar die construction Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit C... See More ⇒
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A SOT-23 C Dim Min Max A 0.37 0.51 B C 1.20 1.40 B TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 J J 0.013 0.10 K 0.903 ... See More ⇒
Detailed specifications: BFT44S, BFT46DCSM, BFT57CSM, BFT57DCSM, BFT58CSM, BFT58DCSM, BFT59CSM, BFT59DCSM, B772, BT2222A, BT3904, BTA1012E3, BTA1015A3, BTA2039J3, BTB1184J3S, BTB1236AL3, BTB1426A3
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