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BT2222A Datasheet (PDF)

0.1. mmbt2222awt1rev0.pdf Size:72K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2222AWT1/DPreliminary InformationMMBT2222AWT1General Purpose TransistorMotorola Preferred DeviceNPN SiliconThese transi

0.2. pmbt2222 pmbt2222a 4.pdf Size:51K _philips

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT2222; PMBT2222ANPN switching transistors1999 Apr 27Product specificationSupersedes data of 1997 Sep 09Philips Semiconductors Product specificationNPN switching transistors PMBT2222; PMBT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIO

 0.3. pmbt2222 pmbt2222a.pdf Size:111K _philips

PMBT2222; PMBT2222ANPN switching transistorsRev. 6 12 November 2010 Product data sheet1. Product profile1.1 General descriptionNPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overviewType number Package PNP complementNXP JEDECPMBT2222 SOT23 TO-236AB PMBT2907PMBT2222A PMBT2907A1.2 Features and benefi

0.4. mmbt2222a 1.pdf Size:52K _philips

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088MMBT2222ANPN switching transistorProduct specification 2000 Apr 11Philips Semiconductors Product specificationNPN switching transistor MMBT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Switching and linear amplification.

 0.5. mmbt2222a.pdf Size:63K _st

MMBT2222ASMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingMMBT2222A M22 SILICON EPITAXIAL PLANAR NPNTRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE ISMMBT2907AAPPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOL

0.6. pn2222a mmbt2222a pzt2222a.pdf Size:174K _fairchild_semi

August 2010PN2222A / MMBT2222A / PZT2222ANPN General Purpose AmplifierFeatures This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19.PN2222A MMBT2222A PZT2222ACCEECBTO-92 SOT-23 SOT-223BMark:1PEBCAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value U

0.7. mmbt2222a.pdf Size:211K _fairchild_semi

PN2222A MMBT2222A PZT2222ACCEECBTO-92 SOT-23 SOT-223BMark:1PEBCNPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19.Absolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collecto

0.8. mmbt2222at.pdf Size:136K _fairchild_semi

September 2008MMBT2222ATNPN Epitaxial Silicon TransistorFeaturesC General purpose amplifier transistor.E Ultra-Small Surface Mount Package for all types.B General purpose switching & amplification application Marking : A02 SOT-523FAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitVCBO Collector-Base Voltage 75 VVCEO Colle

0.9. mmbt2222ak.pdf Size:121K _fairchild_semi

MMBT2222AKNPN Epitaxial Silicon TransistorGeneral Purpose TransistorMarking31PK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 75 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 600 mAPC Collector Power Dissipation 350 mW

0.10. pmbt2222ays.pdf Size:256K _nxp

PMBT2222AYS40 V, 600 mA, double NPN switching transistor24 June 2015 Product data sheet1. General descriptionDouble NPN switching transistor in a very small SOT363 (TSSOP6) Surface-MountedDevice (SMD) plastic package.Double PNP complement: PMBT2907AYS2. Features and benefits Double general-purpose switching transistor High current (max. 600 mA) Voltage max. 40 V

0.11. mmbt2222a.pdf Size:133K _diodes

MMBT2222ANPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Type Available (MMBT2907A) Case Material: Molded Plastic, Green Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 Ideal for Low Power Am

0.12. mmbt2222alp4.pdf Size:149K _diodes

MMBT2222ALP440V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Low Collector-Emitter Saturation Voltage, VCE(sat) Case: X2-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. Ultra-Small Leadless Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moistu

0.13. mmbt2222at.pdf Size:176K _diodes

MMBT2222AT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT2907AT) CDim Min Max Typ Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) A 0.15 0.30 0.22TOP VIEW B C "Green" Device (Note 3 and 4) B 0.75 0.85 0.80B EC 1.45 1.75 1.60GMechanical

0.14. smbt2222a mmbt2222a.pdf Size:81K _infineon

SMBT2222A/MMBT2222ANPN Silicon Switching Transistor Low collector-emitter saturation voltage23 Complementary type: SMBT2907AW (PNP)1 Pb-free (RoHS compliant) package1) Qualified according AEC Q101Type Marking Pin Configuration PackageSMBT2222A/MMBT2222A s1P SOT231 = B 2 = E 3 = CMaximum RatingsParameter Symbol Value Unit40 VCollector-emitter voltage VCE

0.15. mmbt2222at sot-523.pdf Size:222K _mcc

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMBT2222ATMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Capable of 150mWatts of Power DissipationPurpose Amplifier Operating and Storage Junction T

0.16. mmbt2222a sot-23.pdf Size:220K _mcc

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMBT2222AMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation, IC=600mANPN General Operating and Storage Junction Temperature: -55C to +150C Thermal resistance,Junction to Ambient:500oC/

0.17. nsvmmbt2222att1g.pdf Size:123K _onsemi

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

0.18. mmbt2222awt1-d.pdf Size:121K _onsemi

MMBT2222AWT1General Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1MAXIMUM RATINGSBASERating Symbo

0.19. mbt2222adw1t1g.pdf Size:160K _onsemi

MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur

0.20. nsvbt2222adw1t1g.pdf Size:144K _onsemi

MBT2222ADW1,NSVBT2222ADW1General Purpose TransistorNPN Siliconhttp://onsemi.comFeatures Moisture Sensitivity Level: 1 NSV Prefix for Automotive and Other Applications Requiring(3) (2) (1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableQ1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(4) (5) (6)MAXIM

0.21. mmbt2222att1g.pdf Size:123K _onsemi

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

0.22. mmbt2222att1-d.pdf Size:114K _onsemi

MMBT2222ATT1General Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGS (TA = 25

0.23. mmbt2222am3t5g.pdf Size:125K _onsemi

MMBT2222AM3T5GNPN General PurposeTransistorThe MMBT2222AM3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeamplifier applications and is housed in the SOT-723 surface mounthttp://onsemi.compackage. This device is ideal for low-power surface mountapplications where board space is at a premium.COLLECTORFeatures3 Reduce

0.24. mmbt2222alt1g.pdf Size:134K _onsemi

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique1Site and Control Change RequirementsBASE2MAXIMUM RATINGSEMITTERRating Symbo

0.25. mmbt2222am3.pdf Size:168K _onsemi

MMBT2222AM3T5GNPN General PurposeTransistorThe MMBT2222AM3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeamplifier applications and is housed in the SOT-723 surface mounthttp://onsemi.compackage. This device is ideal for low-power surface mountapplications where board space is at a premium.FeaturesCOLLECTOR3 Reduce

0.26. mmbt2222awt3g.pdf Size:129K _onsemi

MMBT2222AWT1G,SMMBT2222AWT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.Features AEC-Q101 Qualified and PPAP CapableSC-70 S Prefix for Automotive and Other Applications Requiring Uni

0.27. mmbt2222alt3g.pdf Size:134K _onsemi

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique1Site and Control Change RequirementsBASE2MAXIMUM RATINGSEMITTERRating Symbo

0.28. mmbt2222awt1g.pdf Size:129K _onsemi

MMBT2222AWT1G,SMMBT2222AWT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.Features AEC-Q101 Qualified and PPAP CapableSC-70 S Prefix for Automotive and Other Applications Requiring Uni

0.29. mmbt2222att3g.pdf Size:123K _onsemi

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

0.30. mbt2222adw1t1.pdf Size:164K _onsemi

MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur

0.31. mmbt2222a.pdf Size:295K _utc

UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE 3AMPLIFIER 12 FEATURES SOT-23* This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. 312SOT-323312SOT-523 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBT2222

0.32. sbt2222au.pdf Size:236K _auk

v SBT2222AUNPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application Features 3 Low Leakage current 1 Low collector saturation voltage enabling 2 low voltage operation Complementary pair with SBT2907AU SOT-323 Ordering Information Type NO. Marking Package Code IQ SBT2222AU SOT-323

0.33. sbt2222auf.pdf Size:187K _auk

v SBT2222AUFNPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features Low Leakage current 1 Low collector saturation voltage enabling 2 low voltage operation Complementary pair with SBT2907AUF SOT-323F Ordering Information Type NO. Marking Package Code IQ SBT2222AUF SOT-323F

0.34. sbt2222af.pdf Size:248K _auk

SBT2222AFNPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features Low Leakage current 1 Low collector saturation voltage enabling low voltage operation 2 SOT-23F Complementary pair with SBT2907AF Ordering Information Type NO. Marking Package Code 1P SBT2222AF SOT-23F

0.35. sbt2222a.pdf Size:253K _auk

SBT2222ANPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application Features Low Leakage current Low collector saturation voltage enabling low voltage operation Complementary pair with SBT2907A SOT-23 Ordering Information Type NO. Marking Package Code 1P SBT2222A SOT-23 Device Cod

0.36. cmbt2222a.pdf Size:75K _rectron

CMBT2222ANPN Silicon Planar Epitaxial Transistors Pin configuration:1. BASE2. EMITTER3. COLLECTOR312Unit: inch (mm)Absolute Maximum RatingsSymbol Value UNITCollector-base voltage (open emitter)VCBOmax 75 VCollector-emmitter voltage (open base)VCEO max 40 VEmmitter base voltage (open collector)VEBO max 6.0 VICCollector current (d.c.) max 600 mATotal

0.37. mmbt2222a.pdf Size:278K _secos

MMBT2222ANPN SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURESACOLLECTOR L Epitaxial Planar Die Construction333 Complementary PNP Type AvailableSTop ViewB(MMBT2907A)111 2 Ideal for Medium Power Amplification andBASE 2SwitchingV G2EMITTERCHJDKMAXIMUM

0.38. mmbt2222aw.pdf Size:1362K _secos

MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURE Complementary PNP Type Available(MMBT2907AW) AL Epitaxial Planar Die Construction 33 Ideal for Medium Power Amplification and Switching Top View C B11 22K EDMARKING CODE H JF GMM

0.39. mmbt2222at.pdf Size:809K _secos

MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-523 Epitaxial Planar Die Construction Complementary PNP Type Available(MMBT2907FW) Ideal for Medium Power Amplification and Switching MARKING CODE 1P PACKAGE INFORMATION Package MPQ Leader Size Millim

0.40. mmbt2222agh.pdf Size:79K _zovie

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconHalogen-free typeLead free productCOLLECTOR33BASE1MMBT2222AGH 122SOT-23EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcTHERMAL CHARACTERISTICSChar

0.41. mmbt2222a.pdf Size:1250K _htsemi

MMBT2222ATRANSISTOR(NPN)SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Voltage VEBO 6 VEmitter-Base Voltage IC Collector Current -C

0.42. mmmbt2222a sot-23.pdf Size:1000K _lge

MMBT2222A SOT-23 Transistor(NPN)SOT-231. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emit

0.43. mbt2222adw.pdf Size:384K _wietron

MBT2222ADWDual General Purpose Transistors2 13654NPN+NPN Silicon12345 6SOT-363(SC-88)NPN+NPNValueVCEO(1)150833T ,Tstg -55 to+150JMBT2222ADW=XXu1. Device mounted on FR4 glass epoxy printed circuit board usingthe minimum recommended footprintWEITRONhttp://www.weitron.com.twMBT2222ADWELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise not

0.44. mmbt2222aw.pdf Size:407K _wietron

MMBT2222AW312SOT-323(SC-70)ValueVCEO150833T ,Tstg -55 to+150JMMBT2222AW=P1(1)u1. Pulse Test: Pulse Width 300us, Duty Cycle 2.0%WEITRONhttp://www.weitron.com.twMMBT2222AWELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICS(1)DC Current Gain-(IC=0.1 mAdc, VCE=10 Vdc)35-(

0.45. mmbt2222at.pdf Size:417K _wietron

MMBT2222ATCOLLECTORPlastic-Encapsulate Transistors33NPN Silicon 121BASEP b Lead(Pb)-FreeSC-892EMITTER (SOT-523F)MAXIMUM RATINGSValueRating SymbolUnit40Collector-Emitter Voltage VCEO Vdc75Collector-Base Voltage VCBOVdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcTHERMAL CHARACTERISTICSCharacteristics SymbolUnitMa

0.46. mmbt2222att1.pdf Size:357K _willas

FM120-M WILLASTHRUMMBT2222ATT1General Purpose T BARRIER RECTIFIERS -20V- 200VransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process dNPN Siliconeesign, excellent power dissipation offers better reverse l akage current and thermal resistance.SOD-123H Low profile surface mounted application in order

0.47. mmbt2222awt1.pdf Size:290K _willas

FM120-M WILLASTHRUMMBT2222AWT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose TransistorsSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toNPN Silic

0.48. mmbt2222adw1t1.pdf Size:341K _willas

FM120-M MMBT2222ADW1T1WILLASTHRUDual General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to o

0.49. hmbt2222a.pdf Size:51K _hsmc

Spec. No. : HE6822 HI-SINCERITY Issued Date : 1993.06.30 Revised Date :2010.08.06 MICROELECTRONICS CORP. Page No. : 1/5 HMBT2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications. SOT-23 Features High frequency current gain High Speed Switching Abs

0.50. mmbt2222a.pdf Size:282K _shenzhen

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR (NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V

0.51. mmbt2222a.pdf Size:276K _cystek

Spec. No. : C203N3 Issued Date : 2002.05.11 CYStech Electronics Corp.Revised Date : 2010.11.12 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor MMBT2222ADescription The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/

0.52. lmbt2222att1g.pdf Size:117K _lrc

LESHAN RADIO COMPANY, LTD.General Purpose TransistorLMBT2222ATT1GNPN SiliconS-LMBT2222ATT1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-89 package whichis designed for low power surface mount applications.Featurescompliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive

0.53. lmbt2222adw1t1g.pdf Size:250K _lrc

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-

0.54. lmbt2222alt1g.pdf Size:503K _lrc

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLMBT2222ALT1GFEATURESS-LMBT2222ALT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12SOT-23DEVICE MARKING AN

0.55. lmbt2222awt1g.pdf Size:62K _lrc

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconThese transistors are designed for generalpurpose amplifier applications. They are LMBT2222AWT1Ghoused in the SOT323/SC70 package whichS-LMBT2222AWT1Gis designed for low power surface mountapplications.We declare that the material of product 3compliance with RoHS requirements.S- Prefix for Automotive a

0.56. bt2222a.pdf Size:113K _china

3DG2222A(BT2222A) NPN PCM TC75 300 mW ICM 600 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB0.1mA 75 V V(BR)CEO ICE0.1mA 40 V V(BR)EBO IEB0.1mA 6.0 V ICBO VCB=10V 1.0 A IEBO VCB=4V 1.0 A IC=0.5A VCEsat 0.6 V IB=0.05A VCE=10V

0.57. kmbt2222a.pdf Size:307K _tysemi

SMD Type TransistorsProduct specificationKMBT2222ASOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13 Features High current (max. 600 mA) Low voltage (max.40 V).1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 75 VCollector-emitter voltag

0.58. mmbt2222altg.pdf Size:146K _first_silicon

MMBT2222LTG,MMBT2222ALTGGeneral Purpose TransistorsFeaturesPackage outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish3Ordering Information1Device Package ShippingMMBT2222LTG SOT23 3000/Tape & Reel 2MMBT2222ALTG SOT23 3000/Tape & ReelSOT23Maximum RatingsRating Symbol 2222 2222A Unit3COLLECTORCollectorEmitter Vo

0.59. mmbt2222a.pdf Size:805K _kexin

D e s st sNPN TransistorsMMBT2222A (KMBT2222A)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.131 2 +0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.1 )1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collec

0.60. kmbt2222at.pdf Size:605K _kexin

SMD Type TransistorsNPN TransistorsMMBT2222AT (KMBT2222AT)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Small Package Complementary to MMBT2907AT30.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll

0.61. mmbt2222at.pdf Size:859K _kexin

SMD Type TransistorsNPN TransistorsMMBT2222AT (KMBT2222AT)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Small Package Complementary to MMBT2907AT30.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll

0.62. mmbt2222a-g.pdf Size:141K _comchip

Small Signal TransistorMMBT2222A-G (NPN)RoHS DeviceFeaturesSOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application.0.118(3.00)0.110(2.80)3Mechanical data 0.055(1.40)0.047(1.20) -Case: SOT-23, molded plastic. 1 20.079(2.00)0.071(1.80) -Terminals: solderable per MIL-STD-750, method 2026.0.006(0.15)0.003(0.08) -Approx. weight: 0

0.63. mmbt2222a-hf.pdf Size:141K _comchip

Small Signal TransistorMMBT2222A-HF (NPN)RoHS DeviceHalogen FreeFeaturesSOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application.0.118(3.00)0.110(2.80)3Mechanical data 0.055(1.40)0.047(1.20) -Case: SOT-23, molded plastic. 1 20.079(2.00)0.071(1.80) -Terminals: solderable per MIL-STD-750, method 2026.0.006(0.15)0.003(0.08) -Ap

0.64. dmbt2222a.pdf Size:223K _dc_components

DC COMPONENTS CO., LTD.DMBT2222ADISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose switching and amplifier applications.SOT-23.020(0.50).012(0.30)Pinning1 = Base 32 = Emitter .063(1.60) .108(0.65).055(1.40) .089(0.25)3 = Collector1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.

0.65. gstmmbt2222a.pdf Size:272K _globaltech_semi

GSTMMBT2222A NPN General Purpose Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Freeamplifier and switch. Packages & Pin Assignments GSTMMBT2222AF(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT2222AF SOT-23 1POrdering Information GS P/NGSTMMBT2222A FPb Fre

     

 

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