Справочник транзисторов. BTB1426A3

 

Биполярный транзистор BTB1426A3 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BTB1426A3
   Маркировка: B1426
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.75 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 240 MHz
   Ёмкость коллекторного перехода (Cc): 35 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: TO92

 Аналоги (замена) для BTB1426A3

 

 

BTB1426A3 Datasheet (PDF)

 ..1. Size:157K  cystek
btb1426a3.pdf

BTB1426A3
BTB1426A3

Spec. No. : C816A3-H Issued Date : 2003.07.02 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low V PNP Epitaxial Planar Transistor CE(SAT)BTB1426A3Description The BTB1426A3 is designed especially for use in strobo flash and medium power amplifier applications. Features High DC current gain and excellent h linearity. FE Low Saturation Voltage V =-0.5

 8.1. Size:229K  cystek
btb1424at3.pdf

BTB1426A3
BTB1426A3

Spec. No. : C817T3 Issued Date : 2005.10.20 CYStech Electronics Corp.Revised Date :2014.02.17 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1424AT3 Features Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.1A Excellent current gain characteristics Complementary to BTD2150AT3 Pb-free lead plating package Symbol Outline BTB1424AT3 TO-12

 8.2. Size:310K  cystek
btb1424n3.pdf

BTB1426A3
BTB1426A3

Spec. No. : C817N3-R Issued Date : 2003.04.03 CYStech Electronics Corp.Revised Date :2013.03.04 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -50VIC -3ABTB1424N3RCESAT(typ.) 0.125 Features Excellent DC current gain characteristics Low Saturation Voltage V =-0.25V(typ)(I =-2A, I =-100mA). CE(sat) C B Complementary to BTD2150N3

 8.3. Size:217K  cystek
btb1424a3.pdf

BTB1426A3
BTB1426A3

Spec. No. : C817A3-R Issued Date : 2006.05.30 CYStech Electronics Corp. Revised Date:2008.04.24 Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1424A3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD2150A3 Pb-free package Symbol Outline BTB1424A3 TO-92 BBase CCo

 8.4. Size:216K  cystek
btb1424ad3.pdf

BTB1426A3
BTB1426A3

Spec. No. : C817D3 Issued Date : 2005.05.16 CYStech Electronics Corp.Revised Date :2011.08.15 Page No. : 1/5 Low V PNP Epitaxial Planar Transistor CE(sat)BTB1424AD3Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.3V(typ) @I =-2A, I =-100mA. CE(sat) C B Complementary to BTD2150AD3 Pb-free lead plating package Symbol Outl

 8.5. Size:247K  cystek
btb1424am3.pdf

BTB1426A3
BTB1426A3

Spec. No. : C817M3 Issued Date : 2007.01.10 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/7 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -50VIC -3ABTB1424AM3RCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.12V(typ) @I =-1A, I =-50mA. CE(sat) C B Complementary to BTD2150AM3 P

 8.6. Size:243K  cystek
btb1424l3.pdf

BTB1426A3
BTB1426A3

Spec. No. : C817L3 Issued Date : 2003.07.31 CYStech Electronics Corp.Revised Date :2011.02.25 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -50VIC -3ABTB1424L3RCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage V (sat)=-0.24V(typ) (I =-2A, I =-100mA). CE C BComplementary to BTD2150L3 P

 8.7. Size:231K  cystek
btb1424fp.pdf

BTB1426A3
BTB1426A3

Spec. No. : C817FP Issued Date : 2011.01.13 CYStech Electronics Corp.Revised Date : 2011.09.14 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -60VIC -3ABTB1424FPRCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.12V(typ) @I =-1A, I =-50mA. CE(sat) C B Complementary to BTD2150FP Pb-

 8.8. Size:167K  cystek
btb1427m3.pdf

BTB1426A3
BTB1426A3

Spec. No. : C816M3-A Issued Date : 2003.05.26 CYStech Electronics Corp.Revised Date : 2005.11.28 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1427M3 Features Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A Excellent DC current gain characteristics Symbol Outline BTB1427M3 SOT-89 BBase CCollector B C E EEmitter

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