BTB1426A3 Specs and Replacement

Type Designator: BTB1426A3

SMD Transistor Code: B1426

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 240 MHz

Collector Capacitance (Cc): 35 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO92

 BTB1426A3 Substitution

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BTB1426A3 datasheet

 ..1. Size:157K  cystek

btb1426a3.pdf pdf_icon

BTB1426A3

Spec. No. C816A3-H Issued Date 2003.07.02 CYStech Electronics Corp. Revised Date Page No. 1/4 Low V PNP Epitaxial Planar Transistor CE(SAT) BTB1426A3 Description The BTB1426A3 is designed especially for use in strobo flash and medium power amplifier applications. Features High DC current gain and excellent h linearity. FE Low Saturation Voltage V =-0.5... See More ⇒

 8.1. Size:229K  cystek

btb1424at3.pdf pdf_icon

BTB1426A3

Spec. No. C817T3 Issued Date 2005.10.20 CYStech Electronics Corp. Revised Date 2014.02.17 Page No. 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1424AT3 Features Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.1A Excellent current gain characteristics Complementary to BTD2150AT3 Pb-free lead plating package Symbol Outline BTB1424AT3 TO-12... See More ⇒

 8.2. Size:310K  cystek

btb1424n3.pdf pdf_icon

BTB1426A3

Spec. No. C817N3-R Issued Date 2003.04.03 CYStech Electronics Corp. Revised Date 2013.03.04 Page No. 1/6 Low V PNP Epitaxial Planar Transistor CE(sat) BVCEO -50V IC -3A BTB1424N3 RCESAT(typ.) 0.125 Features Excellent DC current gain characteristics Low Saturation Voltage V =-0.25V(typ)(I =-2A, I =-100mA). CE(sat) C B Complementary to BTD2150N3 ... See More ⇒

 8.3. Size:217K  cystek

btb1424a3.pdf pdf_icon

BTB1426A3

Spec. No. C817A3-R Issued Date 2006.05.30 CYStech Electronics Corp. Revised Date 2008.04.24 Page 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1424A3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD2150A3 Pb-free package Symbol Outline BTB1424A3 TO-92 B Base C Co... See More ⇒

Detailed specifications: BT2222, BT2222A, BT3904, BTA1012E3, BTA1015A3, BTA2039J3, BTB1184J3S, BTB1236AL3, TIP127, BTB7150N3, BTB772SA3, BTC2328AK3, BTC4621K3, BTD1805D3, C2611, C3150, C3875S

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