D1816 - описание и поиск аналогов

 ..1. Size:194K  china
 d1816.pdf 

D1816 NPN Ta=25 1 PCM W Ta=75 20 IC 4 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.01mA 120 V V(BR)CEO ICE=1mA 100 V V(BR)EBO IEB=0.01mA 6 V ICBO VCB=100V 1 A IEBO VEB=4V 1 A IC=2A VBEsat 1.2 V IB=0.2A VCEsat 0.4 VCE=5V 40

 0.1. Size:152K  sanyo
 2sd1816.pdf 

Ordering number EN2540A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1216/2SD1816 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2045B applications. [2SB1216/2SD1816] Features Low collector-to-emitter saturation voltage. Good linearity o

 0.2. Size:60K  sanyo
 2sb1216 2sd1816.pdf 

Ordering number ENN2540A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1216/2SD1816 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2045B applications. [2SB1216/2SD1816] 6.5 2.3 5.0 0.5 4 Features Low collector-to-emitter saturation voltag

 0.3. Size:504K  onsemi
 2sb1216 2sd1816.pdf 

2SB1216, 2SD1816 Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features Low Collector to Emitter Saturation Voltage Small and Slim Package Facilitating Compactness of Sets ELECTRICAL CONNECTION High fT Good Linearity of hFE 2,4 2,4 Fast Switching Time 1 1 1 Base Typical Applications 2 Collector 3 Emitter

 0.4. Size:268K  utc
 2sd1816.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN PLANAR TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2

 0.5. Size:228K  cystek
 btd1816i3.pdf 

Spec. No. C821I3 Issued Date 2005.10.05 CYStech Electronics Corp. Revised Date 2009.02.04 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 100V IC 4A BTD1816I3 RCESAT 50m Features Low collector-to-emitter saturation voltage High-speed switching Large current capability Good linearity of hFE High fT RoHS compliant package

 0.6. Size:318K  cystek
 btd1816j3.pdf 

Spec. No. C821J3 Issued Date 2005.03.29 CYStech Electronics Corp. Revised Date 2011.01.19 Page No. 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 100V IC 4A BTD1816J3 RCESAT 57m (typ) Features Low collector-to-emitter saturation voltage High-speed switching Large current capability Good linearity of hFE High fT RoHS compliant

 0.7. Size:1132K  kexin
 2sd1816.pdf 

SMD Type Transistors NPN Transistors 2SD1816 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed High fT. 0.127 +0.1 0.80-0.1 max Complementary to 2SB1216 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratin

 0.8. Size:228K  inchange semiconductor
 2sd1816.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1816 DESCRIPTION Excellent linearity of h FE Small and slim package facilitating compactness of sets Low collector-to-emitter saturation voltage High f T Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,H