D1816 Datasheet, Equivalent, Cross Reference Search

D1816 NPN Ta=25 1 PCM W Ta=75 20 IC 4 A Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.01mA 120 V V(BR)CEO ICE=1mA 100 V V(BR)EBO IEB=0.01mA 6 V ICBO VCB=100V 1 A IEBO VEB=4V 1 A IC=2A VBEsat 1.2 V IB=0.2A VCEsat 0.4 VCE=5V 40

Ordering number:EN2540APNP/NPN Epitaxial Planar Silicon Transistors2SB1216/2SD1816High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2045Bapplications.[2SB1216/2SD1816]Features Low collector-to-emitter saturation voltage. Good linearity o

Ordering number:ENN2540APNP/NPN Epitaxial Planar Silicon Transistors2SB1216/2SD1816High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2045Bapplications.[2SB1216/2SD1816]6.52.35.00.54Features Low collector-to-emitter saturation voltag

2SB1216, 2SD1816 Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features Low Collector to Emitter Saturation Voltage Small and Slim Package Facilitating Compactness of Sets ELECTRICAL CONNECTION High fT Good Linearity of hFE 2,4 2,4 Fast Switching Time 1 11: BaseTypical Applications 2 : Collector3: Emitter

UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN PLANAR TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2

Spec. No. : C821I3 Issued Date : 2005.10.05 CYStech Electronics Corp.Revised Date :2009.02.04 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 100VIC 4ABTD1816I3 RCESAT 50m Features Low collector-to-emitter saturation voltage High-speed switching Large current capability Good linearity of hFE High fT RoHS compliant package

Spec. No. : C821J3 Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2011.01.19 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 100V IC 4ABTD1816J3 RCESAT 57m(typ) Features Low collector-to-emitter saturation voltage High-speed switching Large current capability Good linearity of hFE High fT RoHS compliant

SMD Type TransistorsNPN Transistors2SD1816TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed High fT. 0.127+0.10.80-0.1max Complementary to 2SB1216+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratin

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1816DESCRIPTIONExcellent linearity of hFESmall and slim package facilitating compactness of setsLow collector-to-emitter saturation voltageHigh fTFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,H