Справочник транзисторов. 2PB709R

 

Биполярный транзистор 2PB709R - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2PB709R
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 75 MHz
   Ёмкость коллекторного перехода (Cc): 18 pf
   Статический коэффициент передачи тока (hfe): 150
   Корпус транзистора: SC59

 Аналоги (замена) для 2PB709R

 

 

2PB709R Datasheet (PDF)

 8.1. Size:93K  philips
2pb709art.pdf

2PB709R
2PB709R

2PB709ART45 V, 100 mA PNP general-purpose transistorRev. 01 19 March 2007 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.NPN complement: 2PD601ART.1.2 Features General-purpose transistor Small SMD plastic package1.3 Applications General-purpose switching

 8.2. Size:56K  philips
2pb709arl-asl.pdf

2PB709R
2PB709R

2PB709ARL; 2PB709ASL45 V, 100 mA PNP general-purpose transistorsRev. 01 12 November 2008 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number[1] Package NPN complementNXP JEDEC2PB709ARL SOT23 TO-236AB 2PD601ARL2PB709ASL 2PD6

 8.3. Size:47K  philips
2pb709a 4.pdf

2PB709R
2PB709R

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1142PB709APNP general purpose transistor1999 Apr 23Product specificationSupersedes data of 1997 Jun 19Philips Semiconductors Product specificationPNP general purpose transistor 2PB709AFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector

 8.4. Size:93K  nxp
2pb709art.pdf

2PB709R
2PB709R

2PB709ART45 V, 100 mA PNP general-purpose transistorRev. 01 19 March 2007 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.NPN complement: 2PD601ART.1.2 Features General-purpose transistor Small SMD plastic package1.3 Applications General-purpose switching

 8.5. Size:172K  nxp
2pb709axw 2pb709axw 2pb709aqw.pdf

2PB709R
2PB709R

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D1142PB709AWPNP general purpose transistorProduct data sheet 2002 Jun 26NXP Semiconductors Product data sheetPNP general purpose transistor 2PB709AWFEATURES PINNING High collector current (max. 100 mA)PIN DESCRIPTION Low collector-emitter saturation voltage (max. 500 mV).1 base2 emitterAPPLICATIONS3 colle

 8.6. Size:609K  nxp
2pb709arl 2pb709asl 2pb709arl-dg 2pb709asl-dg.pdf

2PB709R
2PB709R

2PB709ARL; 2PB709ASL45 V, 100 mA PNP general-purpose transistorsRev. 01 12 November 2008 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number[1] Package NPN complementNexperia JEDEC2PB709ARL SOT23 TO-236AB 2PD601ARL2PB709ASL

 8.7. Size:56K  nxp
2pb709asl.pdf

2PB709R
2PB709R

2PB709ARL; 2PB709ASL45 V, 100 mA PNP general-purpose transistorsRev. 01 12 November 2008 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number[1] Package NPN complementNXP JEDEC2PB709ARL SOT23 TO-236AB 2PD601ARL2PB709ASL 2PD6

 8.8. Size:278K  nxp
2pb709aqw 2pb709arw 2pb709asw.pdf

2PB709R
2PB709R

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.9. Size:56K  nxp
2pb709arl 2pb709arl 2pb709axl.pdf

2PB709R
2PB709R

2PB709ARL; 2PB709ASL45 V, 100 mA PNP general-purpose transistorsRev. 01 12 November 2008 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number[1] Package NPN complementNXP JEDEC2PB709ARL SOT23 TO-236AB 2PD601ARL2PB709ASL 2PD6

 8.10. Size:56K  nxp
2pb709axl.pdf

2PB709R
2PB709R

2PB709ARL; 2PB709ASL45 V, 100 mA PNP general-purpose transistorsRev. 01 12 November 2008 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number[1] Package NPN complementNXP JEDEC2PB709ARL SOT23 TO-236AB 2PD601ARL2PB709ASL 2PD6

 8.11. Size:172K  nxp
2pb709aqw.pdf

2PB709R
2PB709R

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D1142PB709AWPNP general purpose transistorProduct data sheet 2002 Jun 26NXP Semiconductors Product data sheetPNP general purpose transistor 2PB709AWFEATURES PINNING High collector current (max. 100 mA)PIN DESCRIPTION Low collector-emitter saturation voltage (max. 500 mV).1 base2 emitterAPPLICATIONS3 colle

 8.12. Size:150K  nxp
2pb709brl 2pb709bsl.pdf

2PB709R
2PB709R

2PB709BRL; 2PB709BSL50 V, 200 mA PNP general-purpose transistorsRev. 1 28 June 2010 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN complementNXP JEDEC2PB709BRL SOT23 TO-236AB 2PD601BRL2PB709BSL 2PD601BSL

 8.13. Size:47K  kexin
2pb709aw.pdf

2PB709R

SMD Type ICSMD Type TransistorsPNP General Purpose Transistor2PB709AWFeaturesHigh collector current (max. 100 mA).Low collector-emitter saturation voltage (max. 500 mV).1 Emitter2 Base3 CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -45 VCollector-emitter voltage VCEO -45 VEmitter-base voltage VEBO -6 VCollector cur

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