Биполярный транзистор L2SA1235FLT1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: L2SA1235FLT1G
Маркировка: A5F
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hfe): 150
Корпус транзистора: SOT-23
Аналоги (замена) для L2SA1235FLT1G
L2SA1235FLT1G Datasheet (PDF)
l2sa1235flt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorDESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, L2SA1235FLT1Git is designed for low frequency voltage application.S-L2SA1235FLT1G . FEATURE Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ( @I c=-100mA, I B=-10mA)3Excellent linearity of DC forward current gain.
l2sa1036kplt1g.pdf
LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a
l2sa1576aqt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA1576A
l2sa1576aqt1g l2sa1576art1g l2sa1576ast1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA157
l2sa1036kqlt1g l2sa1036krlt1g.pdf
LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a
l2sa1037akslt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeatures We declare that the material of product compliance with RoHS requirements.L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1037AKQLT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pac
l2sa1577qt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconF We declare that the material of product compliance with RoHS requirements.L2SA1577QT1G SeriesFS- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1577QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.F ORDERING INFORMATION3ShippingDevice PackageL2SA1577Q
l2sa1774st1g.pdf
l2sa1037akqlt1g l2sa1037akslt1g l2sa1037akrlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack
l2sa1036krlt1g.pdf
LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a
l2sa1576art1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA157
l2sa1577pt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconF We declare that the material of product compliance with RoHS requirements. L2SA1577QT1G SeriesF S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1577QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.F ORDERING INFORMATION3ShippingDevice PackageL2SA1577
l2sa1037akqlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack
l2sa1774qt1g l2sa1774rt1g l2sa1774st1g.pdf
l2sa1774qt1g l2sa1774qt3g l2sa1774rt1g l2sa1774rt3g l2sa1774st1g l2sa1774st3g.pdf
l2sa1576ast1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA1576
l2sa1037akqlt1g l2sa1037akqlt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack
l2sa1774qt1g.pdf
l2sa1577rt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL2SA1577QT1G SeriesF We declare that the material of product compliance with RoHS requirements.S-L2SA1577QT1G SeriesFS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.F ORDERING INFORMATION3ShippingDevice PackageL2SA1577Q
l2sa1037akrlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack
l2sa1365flt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorDESCRIPTION L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor, L2SA1365*LT1Gdesigned with high collector current and small VCE(sat). . S-L2SA1365*LT1GFEATURE Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ 3Excellent linearity of DC forward current gain. Super mini package
l2sa1036kqlt1g.pdf
LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a
l2sa1774rt1g.pdf
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050