EMX1DXV6T1G datasheet, аналоги, основные параметры

Наименование производителя: EMX1DXV6T1G  📄📄 

Маркировка: 3X

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.357 W

Макcимально допустимое напряжение коллектор-база (Ucb): 60 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 180 MHz

Ёмкость коллекторного перехода (Cc): 2 pf

Статический коэффициент передачи тока (hFE): 120

Корпус транзистора: SOT-563

 Аналоги (замена) для EMX1DXV6T1G

- подборⓘ биполярного транзистора по параметрам

 

EMX1DXV6T1G даташит

 ..1. Size:133K  onsemi
 emx1dxv6t1g emx1dxv6t5g.pdf pdf_icon

EMX1DXV6T1G

EMX1DXV6T1G, EMX1DXV6T5G Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is www.onsemi.com designed for low power surface mount applications, where board space is at a premium. DUAL NPN GENERAL Features PURPOSE AMPLIFIER TRANSISTORS Reduces Board Space SU

 ..2. Size:52K  onsemi
 emx1dxv6t1g.pdf pdf_icon

EMX1DXV6T1G

EMX1DXV6T1, EMX1DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. DUAL NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board S

 0.1. Size:51K  onsemi
 nsvemx1dxv6t1g.pdf pdf_icon

EMX1DXV6T1G

EMX1DXV6T1, EMX1DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. DUAL NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board S

 4.1. Size:51K  onsemi
 emx1dxv6t1 5 d.pdf pdf_icon

EMX1DXV6T1G

EMX1DXV6T1, EMX1DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. DUAL NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board S

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: ETG81-050A, ETL81-050, ETN35-030, F8050HPLG, F8050HQLG, FMB2907A, EMT52, EMX18, 2SD718, EMX1DXV6T5G, EMX1FHA, CHEMF17GP, CHEMF18GP, CHEMF19GP, CHEMF20GP, CHEMF21GP, CHEMF22GP