Справочник транзисторов. EMX1DXV6T1G

 

Биполярный транзистор EMX1DXV6T1G Даташит. Аналоги


   Наименование производителя: EMX1DXV6T1G
   Маркировка: 3X
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.357 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 180 MHz
   Ёмкость коллекторного перехода (Cc): 2 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: SOT-563
 

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EMX1DXV6T1G Datasheet (PDF)

 ..1. Size:133K  onsemi
 emx1dxv6t1g emx1dxv6t5g.pdf pdf_icon

EMX1DXV6T1G

EMX1DXV6T1G,EMX1DXV6T5GDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which iswww.onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeatures PURPOSE AMPLIFIERTRANSISTORS Reduces Board SpaceSU

 ..2. Size:52K  onsemi
 emx1dxv6t1g.pdf pdf_icon

EMX1DXV6T1G

EMX1DXV6T1,EMX1DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board S

 0.1. Size:51K  onsemi
 nsvemx1dxv6t1g.pdf pdf_icon

EMX1DXV6T1G

EMX1DXV6T1,EMX1DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board S

 4.1. Size:51K  onsemi
 emx1dxv6t1 5 d.pdf pdf_icon

EMX1DXV6T1G

EMX1DXV6T1,EMX1DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board S

ПОКАЗАТЬ ЕЩЁ

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History: EMD4DXV6T5G

 

 
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