Биполярный транзистор EMX1DXV6T1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: EMX1DXV6T1G
Маркировка: 3X
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.357 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 180 MHz
Ёмкость коллекторного перехода (Cc): 2 pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT-563
Аналоги (замена) для EMX1DXV6T1G
EMX1DXV6T1G Datasheet (PDF)
emx1dxv6t1g emx1dxv6t5g.pdf
EMX1DXV6T1G,EMX1DXV6T5GDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which iswww.onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeatures PURPOSE AMPLIFIERTRANSISTORS Reduces Board SpaceSU
emx1dxv6t1g.pdf
EMX1DXV6T1,EMX1DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board S
nsvemx1dxv6t1g.pdf
EMX1DXV6T1,EMX1DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board S
emx1dxv6t1 5 d.pdf
EMX1DXV6T1,EMX1DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board S
emx1dxv6t5g.pdf
EMX1DXV6T1,EMX1DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board S
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050