EMX1DXV6T1G Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

EMX1DXV6T1G Datasheet. Specs and Replacement

Type Designator: EMX1DXV6T1G 📄📄

SMD Transistor Code: 3X

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.357 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT-563

EMX1DXV6T1G Substitution

- BJT ⓘ Cross-Reference Search

EMX1DXV6T1G datasheet

..1. Size:133K onsemi

emx1dxv6t1g emx1dxv6t5g.pdf pdf_icon

EMX1DXV6T1G, EMX1DXV6T5G Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is www.onsemi.com designed for low power surface mount applications, where board space is at a premium. DUAL NPN GENERAL Features PURPOSE AMPLIFIER TRANSISTORS Reduces Board Space SU... See More ⇒

..2. Size:52K onsemi

emx1dxv6t1g.pdf pdf_icon

EMX1DXV6T1, EMX1DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. DUAL NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board S... See More ⇒

0.1. Size:51K onsemi

nsvemx1dxv6t1g.pdf pdf_icon