All Transistors. EMX1DXV6T1G Datasheet

 

EMX1DXV6T1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: EMX1DXV6T1G
   SMD Transistor Code: 3X
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.357 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-563

 EMX1DXV6T1G Transistor Equivalent Substitute - Cross-Reference Search

   

EMX1DXV6T1G Datasheet (PDF)

 ..1. Size:133K  onsemi
emx1dxv6t1g emx1dxv6t5g.pdf

EMX1DXV6T1G
EMX1DXV6T1G

EMX1DXV6T1G,EMX1DXV6T5GDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which iswww.onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeatures PURPOSE AMPLIFIERTRANSISTORS Reduces Board SpaceSU

 ..2. Size:52K  onsemi
emx1dxv6t1g.pdf

EMX1DXV6T1G
EMX1DXV6T1G

EMX1DXV6T1,EMX1DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board S

 0.1. Size:51K  onsemi
nsvemx1dxv6t1g.pdf

EMX1DXV6T1G
EMX1DXV6T1G

EMX1DXV6T1,EMX1DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board S

 4.1. Size:51K  onsemi
emx1dxv6t1 5 d.pdf

EMX1DXV6T1G
EMX1DXV6T1G

EMX1DXV6T1,EMX1DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board S

 5.1. Size:52K  onsemi
emx1dxv6t5g.pdf

EMX1DXV6T1G
EMX1DXV6T1G

EMX1DXV6T1,EMX1DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board S

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
Back to Top